ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Surface energies of indium doped ZnO were calculated to explain the polarized growth of ZnOnanodisks due to indium doping. Calculation results show that the surface energy of ZnO (0001) surface ismuch larger than that of ZnO (10 1 0) surface, leading to a preferred growth direction of [0001] for pure ZnO.At a doping rate of 1/8, the surface energies of indium doped ZnO are greatly reduced, but the surface energyof (0001) surface is still larger than that of (10 1 0) surface. At a doping rate of 1/4, the surface energies aredecreased further, and the surface energy of (0001) surface is lower than that of (10 1 0) surface. Hence,growth of ZnO along [10 1 0] direction is made possible by heavy indium doping
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.1861.pdf
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