Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 1523-1526
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated random telegraph signals and 1/f noise in a submicron metal–oxide–semiconductor field-effect transistor at low temperatures in the Coulomb-blockade regime. The rich noise characteristics were studied as a function of gate voltage, drain current, and temperature, both in and beyond the Ohmic regime. The results can be understood within a simple model assuming a uniform potential fluctuation of constant magnitude at the location of the dot. Clear signatures of electron heating are found from the noise at higher currents. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370924
Permalink
|
Location |
Call Number |
Expected |
Availability |