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  • 1
    Electronic Resource
    Electronic Resource
    Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3295-3300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20–200 μm and compared with the calculated results. Both Be (in the range 3×1018–2.6×1019 cm−3) and C (1.8×1018–4.7×1019 cm−3)-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347002
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  • 2
    Electronic Resource
    Electronic Resource
    Homojunction internal photoemission far-infrared detectors: Photoresponse performance analysis (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 915-924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concept of homojunction internal photoemission far-infrared (FIR) detectors has been successfully demonstrated using forward biased Si p-i-n diodes at 4.2 K. The basic structure consists of a heavily doped IR absorber layer and an intrinsic (or lightly doped) layer. An interfacial workfunction between these regions defines the long-wavelength cutoff (λc) of the detector. Three types of detectors are distinguished according to the emitter layer doping concentration level. Our model shows that high performance Si FIR detectors ((approximately-greater-than)40 μm) can be realized using the type-II structures with a tailorable λc, in which the absorber/emitter layer is doped to a level somewhat above the metal-insulator transition value. Analytic expressions are used to obtain the workfunction versus doping concentration, and to describe the carrier photoemission processes. The photoexcitation due to free-carrier absorption, emission to the interfacial barrier, hot-carrier transport, and barrier collection due to the image force effect, are considered in calculating the spectral response and quantum efficiency as functions of device parameters for Si n+-i structures, leading to a detailed photoresponse analysis of type-II detectors. These results are useful for the design and optimization of type-II detectors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359019
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling times in superlattice structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7510-7513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a rigorous and convenient approach for estimating the resonant states from the pole of the scattering matrix (reflection coefficient) in the complex energy plane and for determining the resonant tunneling time from the spacing of the energy doublets arising at resonance. The numerical calculation is much faster than numerical integration of the Schrödinger equation. When we apply this method to the coupling of two identical quantum wells, it is shown that the usual and naive estimation of resonant tunneling time through the Wentzel-Kramers-Brillouin method is invalid. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362422
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  • 4
    Electronic Resource
    Electronic Resource
    Space-charge-limited conduction in Si n+–i–n+ homojunction far-infrared detectors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4418-4425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic model is presented to describe the space-charge-limited (SCL) conduction in Si homojunction interfacial work-function internal photoemission far-infrared detectors. The basic detector unit is a thin n+–i–n+ structure, which is operated at low temperatures and characterized by an interfacial work function at the n+–i interface. The unique aspects of this case lead to simple analytic expressions for all variables of interest. The barrier shape and free-carrier concentration distribution in the i layer, and their dependence on the applied bias, i layer thickness, and compensating acceptor concentration, are calculated. The SCL current–voltage characteristic is also investigated as a function of i layer parameters. The results obtained are useful for the IR detector design and performance optimization. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361750
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  • 5
    Electronic Resource
    Electronic Resource
    Demonstration of Si homojunction far-infrared detectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2307-2309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3±0.1 A/W at 27.5 μm and detectivity D* of 6.6×1010 cmHz/W. The λc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40–200 μm) with high performance and tailorable λcs can be realized using higher emitter layer doping concentrations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121344
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  • 6
    Electronic Resource
    Electronic Resource
    Bias effects in high performance GaAs homojunction far-infrared detectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high performance, bias tunable, p-GaAs homojunction interfacial workfunction internal photoemission far-infrared detector is demonstrated. A responsivity of 3.10±0.05 A/W, a quantum efficiency of 12.5%, and a detectivity D* of 5.9×1010 cmHz/W were obtained at 4.2 K for cutoff wavelengths from 80 to 100 μm. The bias dependences of the quantum efficiency, detectivity, and cutoff wavelength were measured and are well explained by the theoretical model. The effect of the layer number on detector performance and the uniformity of the detectors are discussed. A comparison with Ge:Ga photoconductive detectors suggests that similar or even better performance may be obtainable with a far-infrared detector. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120176
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  • 7
    Electronic Resource
    Electronic Resource
    Spike train generation and current-to-frequency conversion in silicon diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p+-n-n+ devices in cryogenic environments. The model is shown to explain the very high dynamic range (107) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101858
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  • 8
    Electronic Resource
    Electronic Resource
    Mode-locked infrared sensor (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1086-1088 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Injection mode infrared detector concepts are expanded to incorporate the nonlinear dynamics concept of mode locking. The first successful demonstration of this approach is reported. The detectors employ extrinsic silicon and have large output signals which require no electronic amplification. Mode locking greatly reduces fluctuations in detector output without a corresponding reduction in detector responsivity. The results could lead to the development of a new class of sensors which exploit recent work on the distinction between deterministic fluctuations in nonlinear systems and intrinsic noise.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98748
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  • 9
    Electronic Resource
    Electronic Resource
    Interfacial work functions and extrinsic silicon infrared photocathodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1738-1740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that n+ and/or p+ contacts on p-i-n diodes can function as solid-state photoemitters at temperatures (approximately-less-than)20 K. Infrared radiation can excite electrons or holes over small n-i or p-i interfacial barriers and into the intrinsic region when the diode is forward biased. Photoelectric thresholds in the far infrared corresponding to 37 and 61 μm cutoffs have been observed for silicon devices using a Fourier transform spectrometer. Suggestions are made to tailor the cutoff wavelengths using different concentrations of various impurities near the metal-insulator transition. Epitaxially grown multilayered (superlattice) detectors are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102203
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  • 10
    Electronic Resource
    Electronic Resource
    Integrate-and-fire infrared detectors (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1711-1713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of infrared radiation on spontaneous pulsing of forward biased silicon p+-n-n+ diodes (injection mode devices) at 4.2 K is studied as a means of detecting infrared radiation in the wavelength range of 20–32 μm. A model based on space-charge buildup of phosphorus donors in the i region is developed to explain the integration and the sudden firing as well as the dependence of firing frequency on infrared flux. Experimentally, a dynamic range of about a million and responsivities of 9×109 Hz/W (9.6 A/W) have been found in nonoptimized detectors. Theory indicates the possibility of even larger dynamic ranges. Dark pulse rates as low as 10−5 Hz have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98552
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