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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 5 (1995), S. 82-87 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The healthy heartbeat is traditionally thought to be regulated according to the classical principle of homeostasis whereby physiologic systems operate to reduce variability and achieve an equilibrium-like state [Physiol. Rev. 9, 399–431 (1929)]. However, recent studies [Phys. Rev. Lett. 70, 1343–1346 (1993); Fractals in Biology and Medicine (Birkhauser-Verlag, Basel, 1994), pp. 55–65] reveal that under normal conditions, beat-to-beat fluctuations in heart rate display the kind of long-range correlations typically exhibited by dynamical systems far from equilibrium [Phys. Rev. Lett. 59, 381–384 (1987)]. In contrast, heart rate time series from patients with severe congestive heart failure show a breakdown of this long-range correlation behavior. We describe a new method—detrended fluctuation analysis (DFA)—for quantifying this correlation property in non-stationary physiological time series. Application of this technique shows evidence for a crossover phenomenon associated with a change in short and long-range scaling exponents. This method may be of use in distinguishing healthy from pathologic data sets based on differences in these scaling properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 775-776 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor field-effect transistors (MESFETs) with extremely low resistance nonalloyed ohmic contacts have been demonstrated. The contact structure consists of an n+-InAs/GaAs strained-layer superlattice and an InAs cap layer. Contact resistances as low as 0.036 Ω mm have been measured. These results represent the smallest figures reported to date for GaAs field-effect transistors. Nonalloyed MESFETs with 1 μm gate lengths had transconductances of about 210 mS/mm.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1546-1548 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature properties of the interface photoluminescence emission in GaxIn1−xAs-InP single heterojunctions grown by molecular beam epitaxy are investigated with changes of temperature and excitation intensity at different depths across the interface. The emission energy shifts to higher energy with increasing excitation intensity and lies between the three-dimensional GaxIn1−xAs-InP near-band-edge exciton and the quasi-donor–acceptor pair transition. The new emission is attributed to the interface exciton which is indirect in real space.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1254-1255 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot-electron transistors fabricated using a 600-A(ring) InGaAs base and a 500-A(ring) InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1738-1740 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In0.53Ga0.47As layer, in InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8×10−7 Ω cm2 to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 900-901 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Employing a structure consisting of n+-InAs/InGaAs and InAs/GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy on GaAs films, nonalloyed contact resistances less than 8.5×10−8 Ω cm2 have been obtained. Self-consistent simulations show that these extremely small nonalloyed contact resistances are due to the suppression of the depletion depth in the GaAs channel and tunneling through the SLS layer. Similar structures on InGaAs channels have led to nonalloyed specific contact resistances of about 1.5×10−8 Ω cm2. These results represent the smallest figures reported for these important material systems.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 570-571 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10−7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 493-494 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal-insulator-semiconductor-type Al0.3Ga0.7As/GaAs field-effect transistor with 1-μm-long by 145-μm-wide gates and intrinsic transconductance of 180 mS/mm has been demonstrated on an InP substrate. The dislocation propagation is minimized by incorporating a superlattice on InP, and a 1.5 μm undoped GaAs buffer layer is grown prior to the actual channel to ensure good quality of the 250 A(ring) active layer. A channel mobility of 1920 cm2/(V s) and a carrier concentration of 1.28×1018 cm−3 have been measured at 300 K. The device exhibits excellent pinch-off, and the gate-to-source reverse breakdown voltage is greater than 5 V. The low output conductance of 2.5 mS/mm indicated small parallel conduction in the undoped GaAs buffer layer. Also, very little hysteresis was found in the current-voltage characteristics, implying few traps in the epilayer.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2427-2430 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature properties of the excitation-dependent photoluminescence emission, in nominally undoped n-type GaxIn1−x As (0.44≤x≤0.48) layers grown on InP by molecular-beam epitaxy, are investigated with changes of temperature and excitation intensity. The excitation-dependent emission is attributed to the quasi-donor-acceptor pair transition in impure compensated crystals. The random impurity potential arising from residual impurities causes a larger energy shift than expected for the usual donor-acceptor pair transition.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2880-2884 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation doped InxGa1−xAs/In0.52Al0.48As/InP structures were grown by molecular-beam epitaxy with x values between 53% and 70%. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration (n2D ) under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n2D concentration.
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