ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at various wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique allows us to recognize and detect these arrays and to evaluate their recombination strength. Dislocations are found to be less recombining in (100)-oriented FZ samples than in (111) oriented ones. In FZ dislocated wafers, a phosphorus diffusion strongly attenuates the LBIC contrast of dislocations, depending on the duration and temperature of the treatment. Electrical activity of the defects, which are still physically present, as verified by x-ray topography, seems to disappear. Simultaneously, the peak intensities of DLTS spectra related to dislocations are reduced and this reduction depends on the phosphorus diffusion temperature and duration. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363535
Permalink