Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 850-852
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe a high-spatial-resolution optical technique to study transport properties in semiconductors, applicable especially to heterostructures characterized by short-carrier diffusion lengths on the 100 nm scale. The method involves spatial near-field optical imaging of photoluminescence profiles created by an interference grating within a total internal reflection configuration. We illustrate the method by applying it as a diagnostic tool to a contemporary problem, namely, to acquire insight into electron–hole pair recombination in InGaN, a blue light-emitting medium exhibiting pronounced nonrandom alloy characteristics. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123387
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