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  • 1
    Electronic Resource
    Electronic Resource
    Determination of the crystal orientation of CuInSe2 by Raman spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2114-2116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new method for the determination of the crystal orientation of CuInSe2 by Raman spectroscopy. The single crystal of CuInSe2 has a (112) natural surface. On this surface we often observe slip lines, which construct a triangular shape. However, it is difficult to identify which corner is the projection of the c axis. We established a new method to identify the c direction by using Raman spectroscopy. This method is also effective for small single crystals down to the size of 1 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354735
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical conduction and electronic structures of novel tetrathionaphthalene derivatives (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1475-1478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conduction of pristine (undoped) and iodine doped vacuum deposited films of the novel donors, dibenzodithiotetra-thionaphthalene and dibenzodithiotetraselenonaphthalene were measured. The electronic structures of these donor compounds were examined experimentally by ultraviolet photoelectron spectroscopy and theoretically by semiempirical MO calculations and compared with the corresponding data of tetrathiotetracene.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347234
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  • 3
    Electronic Resource
    Electronic Resource
    Low-noise and high-power operation in high reflectivity coated nonabsorbing mirror GaAlAs lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4420-4425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully attained low-noise and high-power operation in GaAlAs lasers by applying high reflectivity facet coating approach to nonabsorbing mirror lasers. High reflectivity coating is used to reduce feedback induced noise coming from hopping between the diode cavity modes and between the external cavity modes. A nonabsorbing mirror structure is used to obtain high-power operation by suppressing mirror degradation and catastrophic optical damage effectively even with the use of high reflectivity coating. Nonabsorbing mirror lasers with the front facet reflectivity 50% showed the relative intensity noise level less than −130 dB/Hz at 3 mW under 0%–10% optical feedback and showed the cw output power as high as 50 mW in fundamental spatial mode operation. Under 30-mW cw operation at 50 °C, on the other hand, obvious degradation has not been observed over 4000 h in the nonabsorbing mirror lasers with 50% front facet reflectivity. Thus the present laser is useful as a low-noise source at a low-power level and also as a high-power source with high reliability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346192
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  • 4
    Electronic Resource
    Electronic Resource
    Visible and uv spectra of a polydiacetylene with a side group conjugated to the main chain (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 5510-5517 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The polarized reflection spectra of single crystals of PDA-CPDO [poly-1-(N-carbazolyl)penta-1, 3-diyn-5-ol], which are π conjugated between the side groups and the main chain, have been measured in the photon energy region from 1.38 to 32 eV for the first time with a polarized synchrotron radiation source. Absorption spectra have been calculated using the Kramers–Kronig relation. Transitions in the visible absorption spectrum, which have been previously attributed to an interband transition in a similar polydiacetylene, have been found to be highly dichroic with respect to the direction along the polymer backbone. The absorption spectrum in this region reveals two broad (ΔE(approximately-greater-than)0.4 eV) peaks at 1.9 and 2.7 eV with an almost equal absorption coefficient of 7.5×104 cm−1. The spectral features in the range from 3 to 8 eV result from electronic transitions of the carbazolyl side groups. A single broad (ΔE∼10 eV) absorption band observed at 18 eV is due to either transitions of σ electrons to higher σ* or π* states of the carbazolyl group, or to ionization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459620
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  • 5
    Electronic Resource
    Electronic Resource
    Triplet exciton formation due to interaction between singlet excitons in polydiacetylene (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 7404-7416 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The time-resolved spectroscopy in polydiacetylene single crystals (PDA-MADF {poly-1-[3-(methylamino)phenyl]-4-[3,5-bis(trifluoromethyl)phenyl]-1, 3-butadiyne}) on femtosecond and picosecond time scales was performed. The time dependence of the photoinduced reflectance change in PDA-MADF exhibits three components with lifetimes ∼200 fs, 1–2 ps, and (very-much-greater-than)200 ps. These components are assigned to the free 1Bu excitons, self-trapped excitons, and triplet excitons. From the excitation intensity dependence of the reflectance change, a significant role of bimolecular interactions between singlet excitons for the formation of triplet excitons is clarified. A model of the mechanism of triplet exciton formation after the creation of singlet excitons is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465721
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  • 6
    Electronic Resource
    Electronic Resource
    Interactions of atomic hydrogen with Cu(111), Pt(111), and Pd(111) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6897-6901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the potential energy curves for H adsorption on and absorption in Cu(111), Pt(111), and Pd(111) within the density functional theory. We show stronger dependence of the potential energies on the lateral position of the H atom at the position further from the surface in the case of Pt(111) than one in the case of Pd(111), and no lateral position dependence in the case of Cu(111). Contrary to this, when the H atom comes close to and adsorbs on the surface, the dependence of its adsorption energy (a depth of potential well outside the surface) on the lateral position in the case of Cu(111) is stronger than one in the case of Pd(111), and such dependencies are hardly seen, and the adsorption energies are nearly the same in the case of Pt(111). When the H atom penetrates the first layer of the surface, the activation barrier at a so-called face-centered-cubic hollow site in the case of Pd(111) is the lowest in three surfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322067
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  • 7
    Electronic Resource
    Electronic Resource
    Depth profiles of spatially-resolved Raman spectra of a CuInSe2-based thin-film solar cell (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2793-2795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A CuInSe2-based thin film solar cell fabricated by the selenization method was investigated by micro-Raman-spectroscopy. By measuring the depth-profile of spatially-resolved Raman spectra taken from the cross section of the cell, the formation of MoSe2 at the Mo/CuInSe2 interface was confirmed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361095
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation and characterization of CuAlxGa1−xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3338-3345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuAlxGa1−xSe2 alloy layers were successfully grown on GaAs(001) by low-pressure metalorganic vapor phase epitaxy. The distribution coefficient of Al was unity. All alloy layers had their c-axis normal to the substrate plane. Exciton resonance energies were determined as a function of x by means of photoreflectance measurements. A quadratic dependence of exciton energies on x was confirmed. The spin-orbit splittings of the epilayers were approximately the same as that of bulk crystals. The magnitudes of crystal-field splittings were larger than that of bulk crystals, and this was explained in terms of residual tensile biaxial strain in the epilayers. The color of the low-temperature photoluminescence (PL) changed from red to crimson, orange, yellow, green, and bluish-purple with increasing x. A peak due to a free-to-acceptor transition was dominant in the PL spectra of the alloy layers. The acceptor ionization energy increased with increasing x, and the result may reflect an increase of the hole effective mass. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363245
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of nonstoichiometry on the Urbach's tails of absorption spectra for CuInSe2 single crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1106-1111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra of CuInSe2 single crystals were measured for the samples with −0.150≤x≤0.053, where x represents a degree of nonstoichiometry in the formula Cu1−xIn1+xSe2. The Urbach's tail was observed for all samples between 90 K and room temperature. The Urbach's energy, which represents an arbitrary intensity of exciton–phonon interaction, was almost constant for the Cu-rich samples (x〈0), while it increased with increasing In composition for the In-rich ones (x(approximately-greater-than)0). Such an increase of the Urbach's energy was explained to be due to enhanced electronic distortion caused by the compositional deviation from stoichiometry in terms of simultaneous influence of electron–phonon interaction and structural disorder. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362914
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  • 10
    Electronic Resource
    Electronic Resource
    Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 235-237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful sputtering deposition of aluminum-doped zinc oxide (ZnO:Al) thin films was carried out using the helicon-wave excited plasma (HWP). The films deposited on soda-lime glass substrates exhibited a dominant [0001]-oriented growth with a small full-width at half maximum (0.32 deg) of the (0002) x-ray diffraction peak. The film deposited at 300 °C showed a resistivity of 5×10−4 Ω cm without any additional annealings. High optical transmittance greater than 80% was achieved in the visible spectral wavelengths. Similar to the success of the laser ablation technique, the HWP-sputtering method is expected to be developed as one of the versatile techniques for the preparation of semiconductor thin films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120707
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