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  • 1
    Digitale Medien
    Digitale Medien
    A practical predictive formalism to describe generalized activated physical processes (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4555-4568 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A predictive formalism is developed that is applicable to the large class of activated physical systems described by a differential equation of the generic form: ∂n(φ,t)/∂t =−n(φ,t)F(t) exp(−(φ−R(t))/A(t)). Practical techniques to predict the behavior of activated physical systems for arbitrary time-dependent environments are both intuitively and mathematically developed. Useful techniques to experimentally determine the initial distribution of activation energies, utilizing arbitrary time-dependent laboratory environments, are presented. A number of fundamental results regarding the correct use and interpretation of common diagnostic techniques, such as Arrhenius plots, are derived. It is shown how the predictive results significantly enhance the ability to quantitatively evaluate the reliability of physical systems whose rate-limiting mechanisms are activated processes obeying the above differential equation. Specific issues regarding integrated circuit reliability are examined as potential applications of this predictive formalism, including time-dependent dielectric breakdown, metal electromigration, nonvolatile memory retention, annealing of radiation-induced trapped charge, and thin ferroelectric film switching properties.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349092
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  • 2
    Digitale Medien
    Digitale Medien
    Extremal dynamics: A unifying physical explanation of fractals, 1/f noise, and activated processes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2617-2628 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The properties of physical systems whose observable properties depend upon random exceedances of critical parameters are quantitatively examined. Using extreme value theory, the dynamical behavior of this broad class of systems is derived. This class of systems can exhibit two characteristic signatures: generalized activation when far from equilibrium and noise with a characteristic power spectrum (including 1/f ) when in quasiequilibrium. Fractal structures can also arise from these systems. It is thus demonstrated that generalized activation, noise, and fractals, in some cases, are simply different manifestations of a single common dynamical principle, which is termed "extremal dynamics.'' Examples of physical processes governed by extremal dynamics are discussed, including data loss of nonvolatile memories and dielectric breakdown.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353079
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  • 3
    Digitale Medien
    Digitale Medien
    A predictive model of electron and hole decay in silicon-nitride-oxide-silicon nonvolatile memory transistors experiencing arbitrary thermal environments (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4569-4576 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model is presented which accurately predicts the threshold voltage decay of both the excess electron and excess hole logic states of silicon-nitride-oxide-silicon nonvolatile memory transistors in thermally varying environments. The model predictions require as inputs the initial occupied trap distributions for both trapped holes and trapped electrons. A technique is presented to determine all model parameters, including the initial occupied trap distributions, by performing a single practical experiment with a specific thermal scenario. Once the model parameters are determined by this single experiment, the threshold voltage is predicted (with no adjustable parameters) for arbitrary time dependent thermal environments. Retention experiments are performed for a wide range of thermal environments which are changed during the charge decay process. The accuracy of the model predictions is verified by experimental data.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350341
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  • 4
    Digitale Medien
    Digitale Medien
    Modeling the memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile transistors in a varying thermal environment (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1902-1909 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile memory devices are found to be strongly thermally activated. A model is developed based on thermal emission of charge from traps. This model accurately predicts the threshold voltage decay of transistors stored in varying thermal environments. The model is demonstrated to be accurate over 7 decades of time and for temperatures between −40 and 200 °C.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346580
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  • 5
    Digitale Medien
    Digitale Medien
    Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2849-2860 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The switching behavior of ferroelectric capacitors experiencing arbitrary time-dependent electric fields and arbitrary initial conditions is investigated both theoretically and experimentally. A general approach for modeling incomplete dipole switching in ferroelectric capacitors is used to derive equations describing the electrical behavior of a simple characterization circuit with arbitrary initial conditions and arbitrary time-dependent applied voltages. The equations include four experimentally determined parameters: the remanent and spontaneous polarizations, the coercive field, and the ferroelectric dielectric constant. Once these model parameters are determined from a single high-frequency sinusoidal hysteresis loop, model predictions are made with no adjustable parameters. The circuit behavior for both sinusoidal and trapezoidal input signals is computed, including asymmetric and nonperiodic signals as well as several different initial conditions. The accuracy of the model predictions is quantitatively verified with experimental data. The approach is also utilized to model the switching behavior of a ferroelectric capacitor containing a sheet of space charge. It is found that hysteresis loop distortions resulting from ionizing radiation resemble those caused by a sheet of space charge. This quantitative modeling capability facilitates the optimization of the design of ferroelectric memory circuits by minimizing the amount of required electrical testing and characterization. It can also be used to facilitate the identification and understanding of degradation mechanisms occurring in ferroelectric thin films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349348
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  • 6
    Digitale Medien
    Digitale Medien
    Physics of the ferroelectric nonvolatile memory field effect transistor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5999-6010 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge-sheet model of metal-oxide-semiconductor field-effect transistor device operation with Maxwell's first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor I-V and C-V behavior when time-dependent voltages are applied which result in hysteresis due to ferroelectric switching. The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor. These parameters include the ferroelectric spontaneous and remanent polarization, the coercive field, and dielectric layer thicknesses. We have found that the conventional concept of threshold voltage is no longer useful, and that increasing the spontaneous polarization has only a minor impact on memory operation due to reverse dipole switching of the ferroelectric layer. The application of the model to optimize design and fabrication parameters is illustrated with a virtual prototyping example. The model is also used to develop a practical testing methodology for this unique device.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351910
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  • 7
    Digitale Medien
    Digitale Medien
    Device modeling of ferroelectric capacitors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6463-6471 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors. The methodology is illustrated by modeling the discrete ferroelectric capacitor as a stacked dielectric structure, with switching ferroelectric and nonswitching dielectric layers. Electrical properties of a modified Sawyer–Tower circuit are predicted by the model. Distortions of hysteresis loops due to resistive losses as a function of input signal frequency are accurately predicted by the model. The effect of signal amplitude variations predicted by the model also agree with experimental data. The model is used as a diagnostic tool to demonstrate that cycling degradation, at least for the sample investigated, cannot be modeled by the formation of nonswitching dielectric layer(s) or the formation of conductive regions near the electrodes, but is consistent with a spatially uniform reduction in the number of switching dipoles.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346845
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  • 8
    Digitale Medien
    Digitale Medien
    The Catalysis of the H2-D2O Exchange by Aqueous Buffer Solutions1 (1958)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 80 (1958), S. 64-65 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja01534a018
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  • 9
    Digitale Medien
    Digitale Medien
    Modeling the cycling degradation of silicon-oxide-nitride-oxide-semiconductor transistors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2101-2103 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model has been developed to predict cycling-induced threshold voltage shifts of silicon-oxide-nitride-oxide-semiconductor transistors. The model is based on the mechanism of hole transport through the tunnel oxide. It has been experimentally demonstrated that the model accurately predicts cycling behavior for a wide range of cycling parameters. Only two simple experiments are required to determine the model parameters.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107102
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  • 10
    Digitale Medien
    Digitale Medien
    Effect of temperature on data retention of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7115-7124 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The discharge behavior of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors is investigated for a range of programming and storage temperatures spanning −55 °C to 200 °C. A number of empirical observations strongly limit the nature of the mechanisms that govern charge injection and decay. Both electrons and holes contribute to the charge storage properties of the transistors, and the decay properties of both are thermally activated with a continuous distribution of activation energies (trap depths). Charge decay, for both charge states, is negligibly limited by mechanisms other than those which are strongly thermally activated. The programming temperature, relative to the storage temperature, significantly impacts the retention time of the excess electron state, while not affecting the long term decay of the excess hole state. The experimental results also have significant implications regarding proper retention screening techniques and nonvolatile ROM programming techniques.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345062
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