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  • 1
    Electronic Resource
    Electronic Resource
    Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8215-8220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of boron in N2 ambient is studied by using p+ polysilicon metal-oxide-silicon structures annealed during times long enough to allow boron diffusion through the gate oxide, up to the underlying substrate. Assuming equilibrium segregation at the interfaces, the boron diffusivity in the oxide is calculated by numerically fitting the resulting profile in the substrate. It is found that B diffuses in SiO2 with an activation energy of about 3 eV. We also quantify the influence of the nitridation of the oxide, and confirm its efficiency as a diffusion barrier. However, this study reveals a strong inconsistency between the extracted diffusivity values of B in SiO2 and the amount of B atoms being able to reach the Si/SiO2 interface to account for the observed interface state density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353438
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  • 2
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 278-283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy is used to determine the deep levels introduced by tungsten in the silicon band gap. The experimental results indicate that tungsten creates three defect centers, with levels at Ev+0.22 eV, Ev+0.33 eV, and Ec−0.59 eV. The shape of the concentration profiles indicates that W does not diffuse by a simple mechanism in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347708
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  • 3
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy characterization of silicon-silicon interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7640-7644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the capacitance-voltage technique and mainly deep-level transient spectroscopy (DLTS), we studied silicon-silicon epitaxial layer structures grown by the limited reaction process using silane diluted in hydrogen. We develop a simple but original model to interpret the DLTS data. The use of the two techniques allows the determination of the physical parameters of the structure, i.e., the doping level, the thickness of the layers, and the density and capture cross section of the states localized at the different interfaces of the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347534
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characterization of silicon epitaxial layers grown by limited reaction processing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 358-361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance-voltage technique is used to perform a comparison between various silicon epitaxial layer structures grown by the limited reaction process using silane, disilane, or dichlorosilane, diluted in hydrogen. Accurate analysis of the apparent doping profiles allows the determination of the relevant physical parameters, i.e., the residual doping level and the density of trapped charges at the interfaces between the layers. From the electrical point of view the best result is obtained for growth with disilane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347721
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  • 5
    Electronic Resource
    Electronic Resource
    O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2302-2308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profile of oxygen atoms diffused from SiO2 films into Si substrates as interstitials during high temperature annealing has been studied by infrared absorption spectroscopy using 18O as a tracer. The measured absorbance profile in the substrates can be explained in terms of a simple diffusion model in which the SiO2 layer acts as a reservoir of O and there is no energy barrier to diffusion across the Si/SiO2 interface. The driving force for diffusion is the temperature-dependent solubility of oxygen interstitials in the Si. We find evidence both for the outdiffusion of oxygen from the SiO2 layer into the Si during extended annealing and retrodiffusion back into the SiO2 layer during temperature ramp down. From etchback profiling data on O interstitials we are able to revise the Arrhenius law for O diffusion in Si and obtain an activation energy of 2.57 eV and a preexponential factor of 0.22 cm2 s−1. It is further suggested that there is evidence for enhancement of the O diffusion coefficient in Si at low temperatures resulting from the presence of foreign species such as H. These observations are important in understanding the structure of a thermally grown SiO2/Si interface and annealing-induced degradation in Si-based devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361155
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  • 6
    Electronic Resource
    Electronic Resource
    Phosphorus diffusion in Si0.7Ge0.3 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 93-95 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the results of an experimental study of the diffusion of phosphorus in Si0.7Ge0.3 alloys for temperatures between 800 and 1050 °C. When the phosphorus concentration is lower than the intrinsic carrier concentration at the diffusion temperature, the diffusion has a simple Fickian behavior. The corresponding intrinsic diffusivity has an activation energy of 1.62 eV. On the other hand, at high concentration, the diffusion behavior of P in SiGe is similar to what is observed in pure Si, with concentration profiles exhibiting "kink and tail'' shapes. This suggests that the diffusion mechanisms are similar in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105534
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  • 7
    Electronic Resource
    Electronic Resource
    Titanium diffusion in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1269-1271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range 5×10−10–10−8 cm2 s−1 are obtained, and are about two orders of magnitude higher than previously reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100446
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  • 8
    Electronic Resource
    Electronic Resource
    Metallic contamination in silicon during plasma resist stripping: A deep level transient spectroscopy study (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2241-2243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy is shown to be an easy way to investigate the defects induced in the silicon substrate during photoresist plasma etching. In this study it has been possible to discriminate between the contamination induced by the reactor environment and the contamination due to the resist itself. In particular, it is demonstrated that residual chromium and iron atoms present in the resist are responsible for a contamination of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101136
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal donor formation in silicon: A new kinetic model based on self-interstitial aggregation (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 904-906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new kinetic model is presented for the formation of thermal donors near 450 °C in oxygen-rich silicon. This model is based on the aggregation of the self-interstitials generated by the early stage of oxygen precipitation. Good agreement is obtained with published experimental kinetics, and the model is able to account for several other observations, such as the influence of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98796
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  • 10
    Electronic Resource
    Electronic Resource
    Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2661-2663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of a high-energy (3 MeV) low-dose (5×1013 cm−2) implanted aluminum profile in silicon under inert and dry O2 is investigated in the temperature range (900–1100 °C). The chemical profiles were measured by secondary ion mass spectroscopy and the effective diffusivities were extracted from the experimental data from fitting with calculated profiles obtained by numerical resolution of Fick's law. It is found that the aluminum diffusion is significantly enhanced during thermal oxidation. The diffusivity enhancement decreases with the temperature. Comparison with boron data suggests that the mechanism of aluminum diffusion in silicon is similar to that of boron. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372236
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