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  • 1
    Electronic Resource
    Electronic Resource
    Experimental Study of the Polymorphism of AgI (1959)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 63 (1959), S. 1858-1860 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150581a017
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  • 2
    Electronic Resource
    Electronic Resource
    Mixed magnetic phase in Co-rich metallic glasses : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6323-6325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ac susceptibility (χ) and magnetoresistance (MR) have been measured in Co-rich amorphous ferromagnets [Fe5Co50Ni17−xCrx(BSi)28 (x=0,5,10,15), Fe5Co50Mn17(BSi)28, and Fe7.8Co31.2Ni24Mn15(BSi)22] to understand the changes in magnetic phase brought by the addition of Cr/Mn. The Tc decreases monotonically with Cr/Mn addition. Samples with x=0–15 remain ferromagnetic down to 16 K. But for the Mn substituted samples below 80 K, χ decreases drastically and at 16 K it is only 5% of its value at 80 K indicating spin freezing. dc magnetization data show a peak around 30 K as well as a time dependence in the Mn17 sample. Presence of significant ferromagnetic anisotropy of resistance (FAR) even at the lowest temperature for both Mn-containing samples indicates that ferromagnetism persists even when transverse spin freezing is present. With lowering of temperature FAR increases, and below 30 K it should have decreased considerably if the lowest temperature phase was purely spin-glass-like but here it remains almost constant. The high-field slopes for T 〈 Tc in both orientations are negative. In particular, for Mn15 sample the slope has a broad maximum decreasing on both sides as T → Tc and T〈80 K. This behavior is interpreted in terms of a transverse spin freezing. We conclude that the lowest temperature (〈30 K) phase in samples containing Mn is a mixture of spin-glass and long-range ferromagnetism. Samples containing Cr show a large positive slope for T 〈 Tc and a very low FAR. The ratio Δρ(parallel)/Δρ⊥ ((approximately-equal-to)0) indicates that the domain magnetization lies in the ribbon plane and is parallel to the ribbon axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349982
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  • 3
    Electronic Resource
    Electronic Resource
    Transient ballistic and diffusive phonon heat transport in thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 31-39 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic and diffusive phonon transport under small time and spatial scales are important in fast-switching electronic devices and pulsed-laser processing of materials. The Fourier law represents only diffusive transport and yields an infinite speed for heat waves. Although the hyperbolic heat equation involves a finite heat wave speed, it cannot model ballistic phonon transport in short spatial scales, which under steady state follows the Casimir limit of phonon radiation. An equation of phonon radiative transfer (EPRT) is developed which shows the correct limiting behavior for both purely ballistic and diffusive transport. The solution of the EPRT for diamond thin films not only produces wall temperature jumps under ballistic transport but shows markedly different transient response from that of the Fourier law and the hyperbolic heat equation even for predominantly diffusive transport. For sudden temperature rise at one film boundary, the results show that the Fourier law and the hyperbolic heat equation can significantly over- or underpredict the boundary heat flux at time scales smaller than the phonon relaxation times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354111
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetoresistance in Fe80−xNixCr20 (21≤x≤30) alloys : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5828-5830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Longitudinal and transverse magnetoresistances (MR) and dc magnetization (M) have been measured in Fe80−xNixCr20 (21≤x≤30) alloys where the magnetic phase diagram was already established. The motivation behind the present work is to study the behavior of magnetoresistance (Δρ/ρ) in a concentrated alloy system with continuously varying magnetic phases resulting from strongly competitive exchange interactions. We find that all the three samples show negative MR whose magnitude increases with field (as Hn with n〈1) and decreases with temperature up to 50 K. The MR of the alloy with x=21 (spin glass), although isotropic like the canonical spin glasses (SG), does not show the usual low-field H2 dependence but exhibits a correlation with M like Δρ/ρ ∝ M2.5. The MR behavior of the x=23 (mixed phase) alloy is qualitatively similar to that of x=21 and is like neither a pure SG nor a ferromagnet (FM) showing ferromagnetic anisotropy of resistance (FAR). However, it is rather similar to that of the mixed phase AuFe alloy but with quantitative differences in Δρ/ρ vs H and M vs H behaviors. However, Arrott plots (M2 vs H/M) for x=23 confirm long-range FM order in the mixed phase regime. Similar plots for x=30 show FM order but the MR shows very small FAR. Large high-field dc susceptibility at 11 K indicates SG ordering for x=21 and 23. Thus the MR in this system is quite different from those expected of pure magnetic phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350124
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal imaging by atomic force microscopy using thermocouple cantilever probes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3584-3592 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thermocouple cantilever probes are used in the atomic force microscope (AFM) to simultaneously obtain thermal and topographical images of surfaces with submicrometer scale spatial resolution. Three designs of thermocouple AFM probes and the thermal images obtained by each of them are presented here. Experiments show that the dominant mechanism for sample-probe heat transfer is gas conduction. If probes are not properly designed, this could lead to image distortion and loss of temperature and spatial resolution. The steady state probe behavior is dominated by the gas thermal conductivity whereas the transient effects are dominated by the thermal mass of the probe. Thermal images of single transistors show their thermal characteristics under different biasing conditions. In addition, hot spots created by short-circuit defects within a transistor can be located by this technique. Efforts are underway to improve the spatial resolution from 0.4 to 0.05 μm by careful probe design. The results suggest that this can be achieved when the size of the thermal sensor at the tip of an AFM cantilever probe is of the order of the tip radius. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145474
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6686-6694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper studies the effects of gate voltage on heat generation and transport in a metal–semiconductor field effect transistor made of gallium arsenide (GaAs) with a gate length of 0.2 μm. Based on the interactions between electrons, optical phonons, and acoustic phonons in GaAs, a self-consistent model consisting of hydrodynamic equations for electrons and phonons is developed. Concurrent study of the electrical and thermal behavior of the device shows that under a source-to-drain bias at 3 V and zero gate bias, the maximum electron temperature rise in this device is higher than 1000 K whereas the lattice temperature rise is of the order of 10 K, thereby exhibiting nonequilibrium characteristics. As the gate voltage is decreased from 0 to −2 V the maximum electron temperature increases due to generation of higher electric fields whereas the maximum lattice temperature reduces due to lower power dissipation. The nonequilibrium hot-electron effect can reduce the drain current by 15% and must be included in the analysis. More importantly, it is found that the electron temperature rise is nearly independent of the thermal package conductance whereas the lattice temperature rise depends strongly on it. In addition, an increase of lattice temperature by 100 K can reduce the drain current by 25%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359082
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  • 7
    Electronic Resource
    Electronic Resource
    Solution structure of GCCAAT recognition motif by 2D NMR, spectral simulation, molecular modeling, and distance geometry calculations (1993)
    s.l. : American Chemical Society
    Biochemistry 32 (1993), S. 9053-9064 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00086a010
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal imaging using the atomic force microscope (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new and simple technique for thermal imaging with submicrometer spatial resolution using the atomic force microscope. The method is particularly unique for simultaneously obtaining thermal and topographical images of biased electronic devices and interconnects where there could be different materials and potential variations on a scan surface. Application to a biased metal-semiconductor field-effect transistor showed the heating under the gate and a hot spot between the gate and drain where the electric field is known to be the highest. Thermal images of a biased polycrystalline Al-Cu via structure showed the grain boundaries to be hotter than within the grain. With the development of electronic devices and structures in the submicrometer range, this technique can become very useful as a tool for thermal characterization and property measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109335
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  • 9
    Electronic Resource
    Electronic Resource
    Nanometer-scale lithography using the atomic force microscope (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2293-2295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a new use of the atomic force microscope (AFM) for nanometer-scale lithography on ultrathin films of poly(methylmethacrylate) (PMMA). The PMMA films were chemically modified as both positive and negative resists due to energy transfer from a highly localized electron source provided by metallized AFM tips. We were able to fabricate a line pattern with 68 nm line periodicity with about 35 nm line widths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108268
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  • 10
    Electronic Resource
    Electronic Resource
    Scanning thermal imaging microscopy using composite cantilever probes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 694-696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a simple technique of measuring surface temperature contrast with submicron spatial resolution. The technique uses the atomic force microscope (AFM) to scan a composite cantilever probe made of a thin metal film (aluminum or gold) deposited on a regular silicon nitride AFM probe. During tip-surface contact, heat flow through the tip changes the cantilever temperature which bends the cantilever due to differential thermal expansion of the two probe materials. An ac measurement is used to separate cantilever bending due to temperature and topography. To eliminate image distortion due to air heat conduction, thermal images of a biased resistor were obtained in vacuum (10−5 Torr). The images showed hot spots due to current crowding around voids in the heater and suggested a spatial resolution of 0.4 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114102
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