ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Epitaxial MgO thin films were deposited on Si(100) substrate by atmospheric-pressure metalorganicchemical vapor deposition for using as buffer layers. Ba0.6Sr0.4TiO3 thin films were prepared onMgO/Si(100) substrate by sol-gel technique. The independence of crystallinity on annealing temperaturewas investigated. The Ba0.6Sr0.4TiO3 (BST) thin films are crystallized in preferential (100) orientationafter post-deposition annealing at 850°C and 950°C for 2h in air, respectively. Rutherford backscatteringspectroscopy analysis confirmed that both the BST and MgO films have stoichiometric composition
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.69.pdf
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