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  • 1
  • 2
    Publication Date: 2020-07-08
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 3
    Publication Date: 2017-01-26
    Description: Robust projections and predictions of climate variability and change, particularly at regional scales, rely on the driving processes being represented with fidelity in model simulations. The role of enhanced horizontal resolution in improved process representation in all components of the climate system is of growing interest, particularly as some recent simulations suggest both the possibility of significant changes in large-scale aspects of circulation as well as improvements in small-scale processes and extremes. However, such high-resolution global simulations at climate timescales, with resolutions of at least 50 km in the atmosphere and 0.25° in the ocean, have been performed at relatively few research centres and generally without overall coordination, primarily due to their computational cost. Assessing the robustness of the response of simulated climate to model resolution requires a large multi-model ensemble using a coordinated set of experiments. The Coupled Model Intercomparison Project 6 (CMIP6) is the ideal framework within which to conduct such a study, due to the strong link to models being developed for the CMIP DECK experiments and other model intercomparison projects (MIPs). Increases in high-performance computing (HPC) resources, as well as the revised experimental design for CMIP6, now enable a detailed investigation of the impact of increased resolution up to synoptic weather scales on the simulated mean climate and its variability. The High Resolution Model Intercomparison Project (HighResMIP) presented in this paper applies, for the first time, a multi-model approach to the systematic investigation of the impact of horizontal resolution. A coordinated set of experiments has been designed to assess both a standard and an enhanced horizontal-resolution simulation in the atmosphere and ocean. The set of HighResMIP experiments is divided into three tiers consisting of atmosphere-only and coupled runs and spanning the period 1950–2050, with the possibility of extending to 2100, together with some additional targeted experiments. This paper describes the experimental set-up of HighResMIP, the analysis plan, the connection with the other CMIP6 endorsed MIPs, as well as the DECK and CMIP6 historical simulations. HighResMIP thereby focuses on one of the CMIP6 broad questions, “what are the origins and consequences of systematic model biases?”, but we also discuss how it addresses the World Climte Research Program (WCRP) grand challenges.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Format: application/pdf
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  • 4
    Publication Date: 2017-04-04
    Description: The effect of horizontal resolution on tropical variability is investigated within the modified SINTEX model, SINTEX-F, developed jointly at INGV, IPSL and at the Frontier Research System. The horizontal resolutions T30 and T106 are investigated in terms of the coupling characteristics, frequency and variability of the tropical ocean-atmosphere interactions. It appears that the T106 resolution is generally beneficial even if it does not eliminate all the major systematic errors of the coupled model. There is an excessive shift west of the cold tongue and ENSO variability, and high resolution has also a somewhat negative impact to the variability in the East Indian Ocean. A dominant two-year peak for the NINO3 variabilty in the T30 model is moderated in the T106 as it shifts to longer time scale. At high resolution new processes come into play, as the coupling of tropical instability waves, the resolution of coastal flows at the Pacific Mexican coasts and improved coastal forcing along the coast of South America. The delayed oscillator seems the main mechanism that generates the interannual variability in both models, but the models realize it in different ways. In the T30 model it is confined close to the equator, involving relatively fast equatorial and near-equatorial modes, in the high resolution, it involves a wider latitudinal region and slower waves. It is speculated that the extent of the region that is involved in the interannual variability may be linked to the time scale of the variability itself.
    Description: This research was partially supported by the Italy–USA Cooperation Program of the Italian Ministry of Environment and by the EU projects ENSEMBLES and DYNAMITE.
    Description: Published
    Description: 730-750
    Description: 3.7. Dinamica del clima e dell'oceano
    Description: JCR Journal
    Description: reserved
    Keywords: coupled models ; tropical variability ; ENSO system ; 03. Hydrosphere::03.01. General::03.01.03. Global climate models
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 5
    Publication Date: 2017-04-04
    Description: The Indian Summer Monsoon (ISM) is one of the main components of the Asian summer monsoon. It is well known that one of the starting mechanisms of a summer monsoon is the thermal contrast between land and ocean and that sea surface temperature (SST) and moisture are crucial factors for its evolution and intensity. The Indian Ocean, therefore, may play a very important role in the generation and evolution of the ISM itself. A coupled general circulation model, implemented with a high resolution atmospheric component, appears to be able to simulate the Indian summer monsoon in a realistic way. In particular, the features of the simulated ISM variability are similar to the observations. In this study, the relationships between ISM and Tropical Indian Ocean (TIO) SST anomalies are investigated, as well as the ability of the coupled model to capture those connections. The recent discovery of the Indian Ocean Dipole Mode (IODM) may suggest new perspectives in the relationship between ISM and TIO SST. A new statistical technique, the Coupled Manifold, is used to investigate the TIO SST variability and its relation with the Tropical Pacific Ocean (TPO). The analysis shows that the SST variability in the TIO contains a significant portion that is independent from the TPO variability. The same technique is used to estimate the amount of Indian rainfall variability that can be explained by the Tropical Indian Ocean SST. Indian Ocean SST anomalies are separated in a part remotely forced from the Tropical Pacific Ocean variability and a part independent from that. The relationships between the two SSTA components and the Indian monsoon variability are then investigated in detail.
    Description: Published
    Description: 3083-3105
    Description: 3.7. Dinamica del clima e dell'oceano
    Description: JCR Journal
    Description: reserved
    Keywords: Indian Ocean ; monsoon ; 01. Atmosphere::01.01. Atmosphere::01.01.02. Climate
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 6
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    In:  http://aquaticcommons.org/id/eprint/14722 | 9 | 2014-02-23 16:59:41 | 14722 | Gulf and Caribbean Fisheries Institute
    Publication Date: 2021-07-02
    Description: File contains complete: Special Session Abstracts - Re-Inventing reef fisheries mangement: emphasis on the US Caribbean.
    Keywords: Fisheries ; GCFI
    Repository Name: AquaDocs
    Type: conference_item
    Format: application/pdf
    Format: application/pdf
    Format: 478-479
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6726-6733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.48In0.52As layers grown on n+-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical-vapor deposition (MOCVD), as a function of substrate temperature, have been characterized by current-voltage-temperature, capacitance-voltage, deep-level transient spectroscopy, and admittance spectroscopy measurements. It was found that for diodes formed on MOCVD-AlInAs the current in forward bias is dominated by thermionic emission and the reverse current by recombination through the residual midgap states; whereas, for MBE-AlInAs diodes, the respective currents are dominated by defect-assisted tunneling at low forward and reverse biases. Schottky barrier heights were found to decrease with decreasing growth temperature. Three defect levels E1, E2, and E3 were observed in both material systems, and their densities were found to increase rapidly from ∼1012 to ∼1016 cm−3 as the growth temperature decreased from 740 to 500 °C. The decrease of barrier height and the appearance of the defect-assisted tunneling current at low bias were found to correlate with the increase of defect density. The high density of defects may be responsible for the low barrier heights and higher leakage currents previously observed in AlInAs/InGaAs/InP high electron mobility transistors though MOCVD growth provided high quality AlInAs layers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2385-2389 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of the Bi2−xPbxSr2Ca2Cu3O10 (Pb-2223) phase contained in silver-sheathed oxide-powder-in-tube specimens has been investigated by x-ray diffraction, transmission electron microscopy, and energy dispersive x-ray analysis. Silver tubes loaded with Pb-2223 precursor powders were processed into tapes using established metallurgical techniques. The tapes were heat-treated in a specially designed equilibration apparatus at selected temperatures (800–845 °C) for a range of times (10–5500 min) and quenched in liquid gallium held at ∼40 °C. The results showed that the Pb-2223 phase is stable in a limited temperature interval between 810 and 830 °C in 7.5% oxygen. At 800 °C, this phase decomposes to Bi2Sr2CaCu2O8 (2212), Ca2PbO4, and CuO; while at temperatures ≥840 °C it partially melts with precipitation of Bi2Sr2CuO6 (2201) and Ca2CuO3. The effects of the silver cladding on the Pb-2223 phase stability and microstructure are also discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3709-3715 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage (I-V) measurements have been carried out on p-type InP Schottky diodes following 1 MeV electron radiation. Having received an electron fluence of 1016 cm−2, the I-V-T properties of the diodes show that the conduction mechanism is dominated by thermionic-field emission at low temperature under forward or reverse bias, while that of samples having received an electron fluence of 〈1015 cm−2, conduction is dominated solely by the thermionic emission of carriers. The characteristic value E0 of thermionic-field emission showed a corresponding defect density of 5×1017–1018 cm−3. The radiation defects introduced in the InP cells were found to appear as deep traps, which caused a significant increase in the series resistance of the diodes. The dominant defects showed an activation energy of 0.3 eV obtained from the temperature dependence of the series resistance of the diodes, and were almost entirely removed following a 10 min anneal at 100 °C. These characteristics show that the dominant defects found did not correspond to the defects H3, H4, and E2 usually observed by deep level transient spectroscopy.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3055-3061 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of current-voltage, capacitance-voltage properties of ITO/p-InP solar cell structures has been carried out. I-V-T properties of ITO/p-InP structures show that the conduction of diodes is dominated by defect-assisted tunnelling at low bias, and by thermionic emission at high bias similar to Schottky diodes. Experimental results gave an increased barrier height from thermionic-emission, an anomalously large intercept from 1/C2 vs VB plots on the bias axis and a near-surface depletion of carriers. Such anomalies could be removed by thermal annealing at temperatures, TA≥200 °C, or by etching a thin InP surface layer. All these results demonstrate the existence of a near surface n-type layer, which is a result of process-induced donor-like defects, and the ITO/InP junction is more likely a buried n/p junction.
    Type of Medium: Electronic Resource
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