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  • 1
    Electronic Resource
    Electronic Resource
    Effect of NdF3 and NdCl3 substitution for Nd2O3 on the reduction–diffusion process of Nd–Fe–B powders : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6612-6614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of partial substitution NdX3 (X=F or Cl) for Nd2O3 on the reduction–diffusion (R/D) process of Nd–Fe–B powders has been investigated. NdX3 reacts with Ca in the R/D process to produce CaX2. CaCl2 is distributed uniformly around the Nd2Fe14B grains after reaction. During water washing, CaCl2 reacts quickly with water. This improves the disintegration of compacts and facilitates the removal of Ca. The best results with residual Ca content of 400 ppm and oxygen content of 3000 ppm were obtained. In the case of fluoride, however, a negative result was found. There was no improvement in the disintegration of fluoride compact. This was due to the poor water affinity of CaF2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349874
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen induced radial anisotropic R-Fe-B magnet (R=Pr,Dy) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5518-5520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of alloying concentration of Dy and the absorption amount of hydrogen on the magnetic properties of PrFeB magnets have been studied in this work. Experimental data show that the easy direction of magnetization (EDM) of the Pr-Fe-B-H system is determined by hydrogen concentration. Radial anisotropic magnets can be obtained from hydrogenated Pr15Fe79B6 powders with hydrogen of 4500 ppm. A slight decrease of hydrogen content down to 4250 ppm leads to a uniaxial anisotropic magnet. Partial replacement of Pr by Dy significantly influences the anisotropy of the Pr-Fe-B-H system with saturated hydrogen. A 0.9 at. % Dy substitution for Pr changes the anisotropy of hydrogen decrepitated powders from planer to cone, thus resulting in an isotropic magnet. As the amount of Dy substitution increases to 1.35 at. %, the EDM of magnets persist in the field direction during alignment compaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347986
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  • 3
    Electronic Resource
    Electronic Resource
    Vortex flowmeter designed with wall pressure measurement (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2676-2681 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An axisymmetric bluff body is proposed for a vortex flowmeter as the vortex shedder. It is found that vortex shedding frequencies measured can be nondimensionalized into a unified relation for area blockage ratios of circular disks up to 29.2% and Reynolds numbers in a range of 2.5×103–9.7×104. Vortex shedding frequency can be clearly sensed by a pressure transducer installed on the pipe wall in the neighborhood of the maximum pressure fluctuation being measured. This suggests a feasible design that the sensor of a flowmeter can be removed from the flow field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141859
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  • 4
    Electronic Resource
    Electronic Resource
    A frequency division multiplexed low-finesse fiber optic Fabry–Perot sensor system for strain and displacement measurements (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1275-1278 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report a novel frequency multiplexing method for addressing low finesse fiber Fabry–Perot sensors using a white light source and a CCD based monochromator. The absolute optical path length imbalance of the sensors can be determined using this method. The concept was demonstrated with three fiber Fabry–Perot interferometers for strain and displacement measurements. The accuracy is better than 0.01 μm and the maximum range is approximately 1 mm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150453
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  • 5
    Electronic Resource
    Electronic Resource
    Scanning Electron Microscopy of Developmental Stages of Malpighamoeba mellificae Prell in the Honey Bee (1985)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 32 (1985), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Primary trophozoites of Malpighamoeba mellificae Prell in the process of penetrating the cell membrane were found among the brush border of epithelial cells of the midgut of Apis mellifera L. They were long and slender with an average diameter of 3.68 μm. Their surfaces had some wrinkles and the cytoplasm contained some vesicles. Secondary trophozoites were found in the lumen of Malpighian tubules. Their size was variable and their shapes were highly irregular; some had pseudopodia. The smooth surface of trophozoites possessed numerous small protrusions and pits. Mature cysts were small and oval-shaped; they measured from 2.65 times 3.62-3.4 times 4.6 μm. Their surface was usually smooth but some had wrinkles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1985.tb03027.x
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  • 6
    Electronic Resource
    Electronic Resource
    Compositional evolution and magnetic properties of nanocrystalline Fe81.5Cu0.5Mo0.5P12C3Si2.5 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3972-3976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous alloy Fe81.5P12C3Cu0.5Mo0.5Si2.5 has been prepared and the crystallized alloy exhibits an ultrafine structure with a grain size of about 20 nm and excellent soft magnetic properties. The coercivity and the core loss as low as 6.7 A/m, 0.26 W/kg, respectively, and the maximum permeability as high as 10.2×104 at an optimal annealing temperature of about 360 °C were obtained. By means of x-ray diffraction, transmission electron microscope, and Mössbauer spectroscopy measurements, microstructures of the alloy were investigated as a function of the annealing temperature. The primary crystallization produces ultrafine grains of α-Fe(Si) solid solution with a grain size of about 20 nm precipitated in the residual amorphous matrix. The Si in the α phase was estimated near to be completely disorder ranged and the Si concentration was determined to be about 2%–5%. The Fe3P phase appears in the residual amorphous phase upon annealing at 420 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363355
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  • 7
    Electronic Resource
    Electronic Resource
    Interfacial structure of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 studied by positron annihilation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6214-6216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloy prepared by the crystallization of amorphous alloy has been studied by using the positron annihilation technique. Positron parameters, i.e., lifetime τ1, τ2, and line shape parameter S are obtained as a function of the annealing temperature. The results show that there exist two types of defects at the interfaces of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloy: vacancy-like and vacancy-like group microvoids characterized by the lifetime τ1 and τ2. The former is in overwhelming majority. The changes of the structural defects corresponding to different stages, structural relaxation, and crystallization are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359150
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  • 8
    Electronic Resource
    Electronic Resource
    Rotational slip in III-V heterostructures grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2746-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of rotational slip as a mechanism for relieving strain in Ga1−xInxAs/GaAs and GaAs/Si heterostructures grown by molecular-beam epitaxy. Rotational slip causes a tilt of the epitaxial layer with respect to the substrate. With increasing layer thickness it is accompanied by misfit dislocations and crazing on the surface of the layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342496
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  • 9
    Electronic Resource
    Electronic Resource
    Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6810-6814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In heavily dislocated material (dislocation density of mid-107 cm−2), the low-temperature cathodoluminescence intensity of a sufficiently short-period superlattice comes remarkably close to that of comparison structures grown on low-dislocation material. We attribute this effect to a redistribution of the recombination-active sites along the dislocation cores taking place in the material. The driving force of such redistribution may be electrical or chemical in nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341994
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  • 10
    Electronic Resource
    Electronic Resource
    Tantalum silicide Schottky contacts to GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 642-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temperatures (up to 850 °C) for thermal stability evaluation and the Schottky diodes were characterized by I-V and C-V measurements. It was found that the Si to Ta ratio (x) plays an important role in the thermal stability of the Schottky diode. For small x values, there are interactions between Ta and GaAs, probably a compound formation, after high-temperature annealing. For large x values, the degradation mechanism for the Schottky diodes after high-temperature annealing appears to be the out-diffusion of Ga and As from the substrate. The best composition for a thermally stable Schottky barrier is Ta5 Si3, which shows stable Schottky characteristics after annealing with temperatures up to 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343097
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