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  • 1
    Electronic Resource
    Electronic Resource
    Electrical transport properties of CoSi2 and Co(SixGe1−x)2 films formed by different methods (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5427-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co-evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-μΩ-cm and room-temperature (RT) resistivity of 15 μΩ cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350200
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  • 2
    Electronic Resource
    Electronic Resource
    Generation and evolution of edge-wave packets (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 1635-1657 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper the generation and evolution of an edge-wave packet are studied experimentally and numerically. In the laboratory an edge-wave packet is first generated on a sloping beach by a hinge-type wave-maker. Both the free surface displacement and velocity field are measured along several on-offshore cross sections. Numerical results are also obtained by solving the linear shallow-water wave equations and are compared with experimental data. Numerically predicted wave evolution characteristics are in good agreement with those shown by laboratory data. Analyses of the wave amplitude density spectra of both numerical solutions and experimental data show that wave packets are indeed trapped in the nearshore region and consist of a mixture of Stokes and higher-mode edge waves. Furthermore, the Stokes mode dominates in the low frequency range. Two additional wave-maker designs, i.e., the piston-type and the reverse hinge-type, are investigated numerically. Away from the wave-maker the wave forms (time histories) of the wave packets are insensitive to the details of wave-maker movements. The effects of beach slope on the evolution of wave packets are investigated. The behavior of the velocity field and the attenuation rates of runup amplitudes are also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869682
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  • 3
    Electronic Resource
    Electronic Resource
    Neutron calibration techniques for comparison of tokamak results (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3501-3504 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A workshop on 1–3 August 1989 reviewed the techniques, uncertainties, and experiences of neutron calibration on PLT, TFTR, JET, Tore Supra, JT-60, JIPPT-IIU, Alcator C-Mod, ATF, FT, ASDEX, Textor, and DIII-D. In the summary session, the workshop participants discussed possible consensus neutron calibration techniques appropriate to D-D plasmas in tokamaks. The application of such techniques would facilitate a more accurate comparison of neutron yields from different devices, and also allow new calibration techniques to relate their precision to a reference value. General agreement was reached on the suitability of two techniques: (1) a 252Cf source calibration of epithermal neutron detectors, and (2) threshold neutron activation of Ni foils placed vertically above or below the plasma. This paper will present details on detector positioning, neutron transport calculations, and interlab normalization needed to accomplish the standardized calibration using a Cf neutron source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141558
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetohistory effects and spin reorientations of Nd3Fe29−xTx and Nd3Fe29−xTxN4 (T=V and Cr) compounds : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5170-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The novel compounds Nd3Fe29−xTx (T=V and Cr) have been successfully synthesized. Their x-ray patterns can be indexed with a monoclinic symmetry and the A2/m space group. The Curie temperatures of Nd3Fe29−xTx are 455 and 413 K for T=V and Cr, the saturation magnetization at 4.2 K and room temperature are 54.7 and 46.8 μB/f.u. for T=V and 49.9 and 32.2 μB/f.u. for T=Cr, and the anisotropy fields at 4.2 K and room temperature are 12.8 and 2.4 T for T=V and 9.1 and 1.2 T for T=Cr, respectively. The spin reorientations of the easy magnetization direction of Nd3Fe29−xTx are observed at around 230 K for T=V and 135 K for T=Cr, respectively. After nitrogenation the relative volume expansion was about 6%, Curie temperature of each nitride increased about 50%, and the transition temperature Tsr of the spin reorientations of the nitride also increased 145 K for T=V and 250 K for T=Cr, respectively, compared with its parent compound. Nitrogenation resulted in remarkable improvements in the saturation magnetization and anisotropy fields at 4.2 K and room temperature. Magnetohistory effects for Nd3Fe29−xTx and Nd3Fe29−xTxN4 (T=V and Cr) in a low field have been observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365160
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  • 5
    Electronic Resource
    Electronic Resource
    Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4737-4740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the interdiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4-encapsulated QWIPs red shifted by 1 μm © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363456
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  • 6
    Electronic Resource
    Electronic Resource
    Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4491-4494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donors in the high purity InP epitaxial layer grown by gas source molecular beam epitaxy (GSMBE) have been identified by a photothermal ionization technique in a magnetic field. The dominant residual donors in GSMBE InP are identified to be silicon and sulfur. The Zeeman effect of the hydrogenic donors has also been investigated. The 1s–3p photothermal ionization transitions of the hydrogenic donors are observed even at zero magnetic field. The photoconductivity transition related to the LO phonon is observed and discussed. Furthermore, the photothermal ionization transitions arising from different chemical donors are also clearly resolved in a magnetic field. From the spectral peaks in magnetic field, the electron effective mass m* in GSMBE InP is estimated to be (0.0817±0.0002)m0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363410
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  • 7
    Electronic Resource
    Electronic Resource
    Specificity of cotranslational amino-terminal processing of proteins in yeast (1987)
    s.l. : American Chemical Society
    Biochemistry 26 (1987), S. 8242-8246 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00399a033
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1487-1488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-photoconductivity spectra related to the bound phonons and resonant polaron effect on Si donors in high-purity InP have been investigated. Not only the transition from the 1s ground state to bound phonon state (1s+LO) of Si donors, but also the antilevel crossings of the (3, 1, 0) metastable state with the bound phonon states (1s+LO) and (2p−1+LO) are clearly observed in high magnetic fields. The results demonstrate the bound phonon in Si-doped InP consists of both electron and phonon via multiphonon processes and there is a resonant interaction between LO phonons and impurity-bound electrons in InP. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120600
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  • 9
    Electronic Resource
    Electronic Resource
    Photoconductivity spectra for boron acceptors in Si1−xGex alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 211-213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far infrared photoconductivity spectra of B-doped Si1−xGex grown by Czochralski technique have been investigated in the temperature region from 4.2 to 34 K as well as under high magnetic fields. The photo ionization transition from the ground state of boron acceptor to P3/2 valence band and that related to spin-orbit splitting valence band (P1/2) are observed. The experimental results show that the ionization energy of boron acceptor in Si1−xGex decreases fast and linearly with the increase of Ge concentration for lower Ge composition, and 4% Ge contents make a decrease of 14 meV for the ionization energy of boron in Si0.96Ge0.04. The photoconductivity spectra hardly change with magnetic field up to 11 T. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116463
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  • 10
    Electronic Resource
    Electronic Resource
    Intensity-dependent photoluminescence spectra of semiconductor-doped glasses (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 643-645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of CdSx Se1−x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (〉30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100396
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