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  • 1
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes by gas source molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1973-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiwall carbon nanotubes have been grown by gas source molecular beam epitaxy in the presence of Ni catalyst. Some nanotubes show thinner bases compared with their heads. First- and second-order Raman scattering spectra are used to study the structure of samples with different initial thicknesses of Ni layers. The second-order 2D Raman mode of carbon nanotubes shows a downshift compared with the graphite-like structure. The growth of carbon nanotubes is found to depend on the size of the metal droplets. When the initial Ni layer is either too thick or too thin, few carbon nanotubes are observed. The Raman spectra show graphite and glassy carbon structures for too thick and too thin initial Ni layer films, respectively. Only when a proper range of Ni catalyst film is used, carbon nanotubes could be found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337083
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  • 2
    Electronic Resource
    Electronic Resource
    Ge/Si interdiffusion in the GeSi dots and wetting layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4290-4292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si–Ge mode redshifts and the intensity of the local Si–Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403667
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  • 3
    Electronic Resource
    Electronic Resource
    High-quality strain-relaxed SiGe films grown with low temperature Si buffer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8279-8283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si0.7Ge0.3 film with a low threading dislocation density as well as smooth surface was obtained by this method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375801
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  • 4
    Electronic Resource
    Electronic Resource
    Transport property of Si/Si1−xGex/Si p-type modulation doped double heterostructure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2544-2546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High mobility Si/Si1−xGex/Si p-type modulation-doped double heterostructures with Ge fractions of 0.2, 0.25, 0.3 have been grown by rapid thermal process/very low pressure-chemical vapor deposition. Hole Hall mobilities as high as ∼300 cm2/V s (at 293 K and sheet carrier concentration of ∼2.6×1013 cm−2) and ∼8400 cm2/V s (at 77 K and sheet carrier concentration of ∼1.2×1013 cm−2) have been obtained for heterostructures with x=0.3. The variation of hole mobility with temperature and the influence of the Ge fraction on hole mobility were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357569
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  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering from a self-organized Ge dot superlattice (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1863-1865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 cm−1 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123694
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  • 6
    Electronic Resource
    Electronic Resource
    Intersubband absorption in boron-doped multiple Ge quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 185-187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband absorption in self-assembled boron-doped multiple Ge quantum dots is observed. The structures used consist of 20 periods of boron-doped Ge dot layers and undoped Si barriers. The infrared absorption as a function of wavelength is measured by Fourier transform infrared spectroscopy using a waveguide geometry. Absorption peaks in the mid-infrared range have been observed, which are attributed to the transitions between the first two heavy hole states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This observation suggests the possible use of multiple Ge quantum dots for infrared detector application. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123287
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  • 7
    Electronic Resource
    Electronic Resource
    Study of dry oxidation of triangle-shaped silicon nanostructure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1761-1763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanostructures along [011] direction with upside down triangle cross sections on the top of the sawtooth structure with (111) facets are prepared by using the lithography technique, reactive ion etching, and anisotropic wet chemical etching. These triangle-shaped silicon nanostructures are thermally oxidized in dry oxygen over a range of temperature from 850 to 1000 °C, which is characterized by scanning electron microscopy. The self-limiting oxidation phenomenon observed in silicon nanostructures is discussed. Cross-sectional shape change of the silicon nanostructure under different oxidation temperatures is demonstrated. A silicon quantum wire is successfully fabricated by two-step thermal oxidation of the silicon nanostructures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117477
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  • 8
    Electronic Resource
    Electronic Resource
    Properties of Schottky contact of Al on SiGe alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1123-1125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Schottky contacts of Al on p-Si1−xGex alloys were investigated. The Si1−xGex strained layers were grown on p-Si substrates by using rapid thermal process/very low pressure-chemical vapor deposition. Low reverse currents were obtained. It was found that the Schottky barrier height of Al/p-Si1−xGex contacts decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the band gap of the strained Si1−xGex. The Fermi level at the interface is pinned at about 0.43 eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si sacrificial cap layers on the properties of Schottky contacts were also investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115733
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  • 9
    Electronic Resource
    Electronic Resource
    A method for fabricating silicon quantum wires based on SiGe/Si heterostructure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 352-354 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low-pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried out to generate expected silicon quantum wires. The result observed is demonstrated using scanning electron microscopy. Furthermore, the thermal oxidation characteristics of the silicon wires are investigated. The present method provides a well-controllable way to fabricate silicon quantum wires and is fully compatible with silicon microelectronic technology. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116713
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and study of self-organized Ge quantum wires on Si(111) substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2471-2473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized Ge quantum wires were grown on regular atomic steps formed along [1¯10] direction on Si(111) substrates by annealing at 870 °C in vacuum. The samples were then studied by atomic force microscopy, polarization-dependent Raman scattering, and low temperature photoluminescence spectroscopy. The results suggest that good quality Ge quantum wires were formed and clear quantum confinement-induced quantization in the wires was observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123884
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