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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 890-896 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting NbN was produced on commercial carbon fibers and sapphire substrates by dc reactive magnetron sputtering. Uniform coating was achieved by spreading 9000 filaments into a strip located between two planar magnetrons facing each other. The conditions for B1 phase formation and homogeneous coating have been studied. Over a rather wide range of total pressures, pAr+pN2, the highest superconducting transition temperature was found for a nitrogen partial pressure pN2 of about 0.05 Pa. In addition, tensile or compressive strains were produced in the NbN film on the carbon fiber as a function of bias. The NbN grain size was controlled in the range between 10 and 25 nm. Without a bias, the usual (111) preferential orientation of the grains was observed in the NbN film on the carbon fiber. The intensity ratio I200/I111 could be controlled between 0.74 and 0.4. Under an increased bias, the lattice parameter grew from about 0.4385 to about 0.4395 nm. This behavior may be due to a variety of reasons. The superconducting critical currents jc in a self-magnetic field are about 105 A/cm2 for NbN on carbon fibers (C-NbN) and about 2×106 for NbN on sapphire (S-NbN). Various microstructures and, to some extent, also mechanical defects are thought to be responsible for this difference. At 13 T, the corresponding jc values are 2×104 and 105 A/cm2 for NbN films of 1-μm thickness. The extrapolated Bc2 (4K) values for C-NbN are about 30–35 T, for S-NbN about 25 T. The nucleation conditions for NbN depended strongly on the substrate; this was found to be true for the existence of the B1 phase with respect to gas composition, microstructure, and deposition rate. The analysis of the composition of the films, which was performed by Rutherford backscattering and scanning Auger depth profiling, revealed uniform compositions with approximately 1-at. % carbon and approximately 0.1-at. % oxygen contaminations.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 574-576 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of Bi2Sr2Ca2Cu3Ox (BSCCO 2223) films has been realized on (001)MgO with a cylindrical sputtering gun. The 2223 films with the c axis perpendicular to (001)MgO exhibit three types of in-plane epitaxial relations, i.e., [100]BSCCO(parallel)〈100〉MgO, [100]BSCCO(parallel)〈150〉MgO, and [100]BSCCO(parallel)〈110〉MgO. Individual domains possess respective in-plane mosaic distributions, which manifest that different epitaxial growth modes take place. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1792-1794 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium-stabilized zirconia substrates using x-ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a minimum yield value of 10% in the channeling experiment. The lattice matching required for epitaxial growth is achieved by azimuthal adjustment of the film plane with respect to the substrate. The superior growth is reflected in the film properties like the critical current density yielding values of 2×106 A/cm2 at 77 K.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2367-2369 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin films of YBa2Cu3O7−x with thicknesses down to 2 nm were grown on(100)SrTiO3 and (100)MgO by inverted cylindrical magnetron sputtering. Metallic behavior and zero resistance temperatures above 4.2 K were obtained in 3-nm-thick films on SrTiO3. Thinner films revealed temperature-activated conductivity and only partial transitions to superconductivity due to inhomogeneities in the film morphology. On MgO, the critical film thickness leading to deteriorations of the transport properties was 6 nm. An analysis of the fluctuation-enhanced conductivity near Tc in terms of the Aslamazov–Larkin theory [Phys. Lett. A 26, 238 (1968)] revealed three-dimensional behavior even in the thinnest fully superconducting films.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 973-975 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin YBaCuO films have been deposited on ZrO2(Y) and SrTiO3 substrates by a novel ablation method, using a pulsed intense electron beam generated by a pseudospark source. Films with zero resistance around 85 K were grown at substrate temperatures of 820 °C with high reproducibility. X-ray analysis indicates highly textured growth on both substrates. Jc values were 6×106 A/cm2 at 4.2 K and 1.1×105 A/cm2 at 77 K. Because of the high simplicity of the deposition system and the variety of changeable parameters it represents an interesting alternative to existing laser ablation methods.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1098-1100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin superconducting films of YBa2 Cu3 O7 have been prepared by magnetron sputtering from targets of sintered material in an oxygen-argon atmosphere. The compositional and structural properties were studied by Rutherford backscattering and x-ray diffraction. The films were deposited at substrate temperatures between 580 and 800 °C. It was found that the material grows in the oxygen deficient tetragonal phase. In situ heat treatment at 430 °C in pure O2 atmosphere generates the orthorhombic structure and the films on sapphire and SrTiO3 coated sapphire substrates show the full superconducting transition at 83 K.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 310-312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth features of YBa2Cu3O7−x thin films on (100) MgO substrates were studied by He ion channeling and x-ray diffraction measurements. A minimum yield value of 7% at 2 MeV He ion energy and a standard deviation of the crystallite misorientation of only 0.1° show that epitaxial growth (c-axis oriented) is achieved despite a large lattice mismatch of about 9% between the film and the substrate. Detailed studies of the energy dependence of the dechanneling yield at the film-substrate interface for films of different thickness reveal the presence of dislocations probably formed by strain relief in the initial state of growth. Stacking faults appear as the main defect structure in the bulk of the films.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3215-3217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural analyses and investigations of flux penetration of typically melt-textured YBa2Cu3O7−δ samples were performed. This allows regions of suppressed critical current density to be directly related to microstructural defects. At small-angle grain boundaries the critical current density was found to be reduced by a factor of up to 20. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1273-1275 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Medium energy ion scattering combined with channeling was applied to study the crystalline quality of ultrathin YBaCuO films on (100) SrTiO3 and MgO substrates. Films with thicknesses between 3 and 6 nm were deposited by inverted cylindrical magnetron sputtering. Under optimized growth conditions c-axis oriented growth was obtained with minimum yield values of 2%–12% (depending on thickness) for films on SrTiO3 and 23% on MgO. On the surface of the films a disordered region with a thickness of about 0.6 nm independent of substrate, film thickness, and storage time under ambient conditions was observed. During etching experiments an Y-oxide layer was formed on the surface. For films on SrTiO3 at thicknesses above 4 nm an abrupt increase in the minimum yield was found indicating pseudomorphic growth up to this thickness. In contrast, for films on MgO it was found that a critical film thickness of about 3.6 nm is necessary for the formation of a homogeneous film. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2863-2865 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Medium energy ion scattering in combination with an electrostatic high-resolution detector system was applied to study the initial growth of YBaCuO thin films on (100) SrTiO3 and MgO substrates. Ultrathin films with thicknesses in the range of 0.4 to 3.6 nm were deposited by inverted cylindrical magnetron sputtering. From the absolute determination of coverage as a function of depth the following growth features were deduced: on both substrates the films grow in blocks of one unit cell and full coverage with a homogeneous film is achieved at 3.6-nm thickness. In the initial stage of nucleation, on SrTiO3 the growth of an additional block layer is initiated only after completion of the preceding layer, while island growth is observed on MgO with different coverage values on three layer levels appearing simultaneously. © 1994 American Institute of Physics.
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