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  • 1
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
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  • 2
    Electronic Resource
    Electronic Resource
    Interface states generated by heat treatment in Au/InGaP Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3589-3592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is a study of the formation of interface traps in Au/n−In0.5Ga0.5P contacts. The effects of heat treatment near the ohmic alloying temperature on the characteristics of the Schottky diodes are studied using current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy measurements. New interface states that are distributed around 0.73 eV below the conduction band minimum were generated by heat treatment above 350 °C before metallization. In a sample that was heat treated at 400 °C for 30 min, the maximum density of generated interface states was estimated to be approximately 2×1011 cm−2 eV−1. The origin of these interface states is attributed to the transformation of a phosphorus vacancy that is generated by the vaporization of phosphorus from the surface of In0.5Ga0.5P.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352297
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  • 3
    Electronic Resource
    Electronic Resource
    Study of charge trapping instabilities in a silicon-nitride/indium-phosphide metal-insulator-semiconductor structure by the constant-capacitance method (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4743-4748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The applicability of the constant-capacitance method to the characterization of the charge trapping mechanisms in the insulator of a metal-insulator semiconductor (MIS) is demonstrated. It is simple, time saving, and particularly useful in a III-V compound semiconductor MIS where the density of fast interface states may be high. Under constant capacitance, the measured diode current is directly related to the average distance that the injected charges travel before being trapped within the insulator. This method was applied to Al/silicon-nitride/InP MIS capacitors where silicon nitride films were formed by plasma-enhanced chemical-vapor deposition (PECVD). From the measurements, it was found that charge trapping by direct tunneling is dominant near the silicon-nitride/InP interface under a low insulator field, and the injection of electrons to the bulk of the silicon nitride assisted by the electric field occurs at a higher insulator field. It is also confirmed that the trap density near the silicon-nitride/InP interface is higher than that of the silicon-nitride bulk due to the initial transient phenomena of the PECVD process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352083
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1049-1051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351360
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  • 5
    Electronic Resource
    Electronic Resource
    Interface properties and capacitance-voltage behavior of indium phosphide metal-insulator-semiconductor prepared by plasma-assisted oxidation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7918-7920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remote plasma-enhanced oxidation method, with two different reactant gases of N2O and POCl3, is used to grow stable insulating layers on an InP substrate. The compositional profile of the oxide grown with N2O reactant was very similar to that of thermally grown oxide. The hysteresis of capacitance-voltage (C-V) characteristics in this system was relatively small and determined by the compensative effects of mobile charges in the oxide and the capture of electrons at the interface. The very unstable nature of the C-V characteristics in the metal-insulator-semiconductor (MIS) diode prepared with POCl3 reactant seems to be related to the gradual nature of the interface and/or the P-oxide deficiency at the interface. Even if a stable oxide layer of InPO4 can be grown by POCl3 plasma, the very poor nature of the transition region must be overcome to achieve a good MIS structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347482
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  • 6
    Electronic Resource
    Electronic Resource
    Computer simulation study of the θ-point in three dimensions. I. Self-avoiding walks on a simple cubic lattice (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5144-5154 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using the scanning simulation method we study the tricritical behavior at the Flory θ-point of self-avoiding walks (SAWs) with nearest neighbors attractions ε (ε〈0) on a simple cubic lattice (in the following paper we investigate tricritical trails on the same lattice). The tricritical temperature Tt is −ε/kBTt=0.274±0.006 (one standard deviation). The results for the radius of gyration G and the end-to-end distance R are consistent with the theoretical prediction νt=0.5 and with a logarithmic correction to scaling; the ratio G2/R2 =0.1659±0.0001 (calculated without taking into account correction to scaling) is only slightly smaller than the theoretical asymptotic value 1/6=0.1666.... The results for the partition function Z at Tt lead to γt=1.005±0.017 in accord with theory and to μt=5.058±0.014, where μt is the growth parameter; the correction to scaling in Z is found to be relatively small. For the chain length studied the divergence of the specific heat at Tt (αt(approximately-equal-to)0.3) is significantly larger than that predicted by theory, (ln N)3/11 (i.e., αt=0). Also, at Tt our data are affected by strong correction to scaling and are thus not consistent with the theoretical value of the crossover exponent φt=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458548
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  • 7
    Electronic Resource
    Electronic Resource
    Computer simulation study of the θ-point in three dimensions. II. Trails on a simple cubic lattice (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5155-5161 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A self-attracting trail is a walk on a lattice which may intersect itself but two bonds are not allowed to overlap; an interaction energy ε (ε〈0) is associated with each self-intersection. Using the scanning simulation method, we study the tricritical behavior at the collapse transition of self-attracting trails of N≤250 steps on a simple cubic lattice. In the preceding paper (paper I) tricritical self-avoiding walks (SAWs) on the same lattice have been investigated. The tricritical temperature of trails is −ε/kBTt=0.550±0.004 (one standard deviation). The results for the radius of gyration, G, and the end-to-end distance, R, lead to νt=0.515±0.003, which is larger than νt=1/2, the theoretical prediction for SAWs. The ratio G2/R2=0.1676±0.0001 is slightly larger than 1/6=0.1666 ... predicted by theory for SAWs; The results for the partition function at Kt lead to γt=1.040±0.005 (as compared to the theoretical prediction for SAWs γt=1) and to the growth parameter value μt=5.0023±0.0020. The crossover exponent, φt, is approximately 0.5 as expected for SAWs at tricriticality; this value is significantly smaller than that found for SAWs in paper I. The results of G, R, and Z at Kt are found to be inconsistent with logarithmic corrections to scaling. However, we do not think that the above differences between trails and SAWs are sufficient to suggest unequivocally that the two models belong to different universality classes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458549
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  • 8
    Electronic Resource
    Electronic Resource
    The collapse transition of self-avoiding walks on a square lattice: A computer simulation study (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 2544-2554 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Employing the scanning simulation method, we study the tricritical behavior (at the Flory θ point) of self-avoiding walks with nearest-neighbors attraction energy ε(−||ε||) on a square lattice. We obtain −ε/kBTt=0.658±0.004, where Tt is the tricritical temperature and kB is the Boltzmann constant. The radius of gyration G and the end-to-end distance R lead to νt(G)=0.5795±0.0030 and νt(R) =0.574±0.006, respectively. We also obtain γt=1.11±0.022 and μt =3.213±0.013, where γt is the free energy exponent and μt is the growth parameter. Three estimates are calculated for the crossover exponent φt , based, respectively, on G, R and the specific heat C: φt (G)=0.597±0.008, φt(R)=0.564±0.009, and φt(C)=0.66±0.02. Our values for νt and γt are close to the Duplantier and Saleur exact values for the θ' point, νt =4/7=0.571... and γt=8/7=1.142 ... . However, our values of φt are significantly larger than the exact value φt=3/7=0.42... . This suggests that the θ and θ' points belong to different universality classes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457014
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature photoreflectance and photoluminescence of heavily Si-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6727-6729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra in heavily n-doped GaAs were compared. It was found that for highly degenerate semiconductors the critical energy measured by the PR equals to the peak energy of the PL spectrum. When Fermi level lies below the conduction-band minimum, the PR spectra revealed the band-gap energy as well as the energy Emax at which the electron concentration per unit energy in the donor band becomes maximum, and this maximum was observed to merge in the conduction-band at about 3×1017 cm−3 electron concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359090
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
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