Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3307-3309
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
For many experiments and device applications, electrical contacts to a two-dimensional conduction layer must remain reliable under repeated temperature cycling between 300 and 77 K or lower. This work introduces the use of a silicon-doped InAs contact to the AlGaAs/GaAs two-dimensional electron gas which demonstrates exceptional reliability under such temperature cycling. The noise spectrum of AlGaAs/GaAs contacted with silicon-doped InAs shows almost no dependence on bias current; this fact can be used to improve the performance of device applications such as Hall sensors. In addition, this work introduces an alternative two-dimensional conduction structure, highly mismatched InAs/GaP. InAs/GaP contacted with Ti/Au shows reliability equal to AlGaAs/GaAs contacted with silicon-doped InAs. The InAs/GaP material may be more desirable for some applications because of the lower temperature dependence of its electronic properties and potentially easier integration with silicon-based microelectronics. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126615
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