ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Publication Date: 2015-04-20
    Description: Mucormycosis usually presents as a progressive infection with significant angio-invasion. Mucormycosis due to Mucor irregularis (formerly Rhizomucor variabilis var. variabilis), however, is exceptional in causing chronic cutaneous infection in immunocompetent humans, ultimately leading to severe morbidity if left untreated. More than 90 % of the cases known to date were reported from Asia, mainly from China. The nearest neighbour of M. irregularis is the saprobic species M. hiemalis. The aim of this study was to evaluate the taxonomic position, epidemiology, and intra- and inter-species diversity of M. irregularis based on 21 strains (clinical n = 17) by multilocus analysis using ITS, LSU, RPB1 and RPB2 genes, compared to results of cluster analysis with amplified fragment length polymorphism (AFLP) data. By combining MLST and AFLP analyses, M. irregularis was found to be monophyletic with high bootstrap support, and consisted of five subgroups, which were not concordant in all partitions. It was thus confirmed that M. irregularis is a single species at 96.1–100 % ITS similarity and low recombination rates between populations. Some geographic structuring was noted with some localised populations, which may be explained by limited air-dispersal. The natural habitat of the species is likely to be in soil and decomposing plant material.
    Keywords: Biodiversity ; chronic cutaneous infection ; epidemiology ; Mucor hiemalis ; Mucor irregularis ; Mucormycosis ; taxonomy
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Publication Date: 2024-01-12
    Description: Mucormycosis usually presents as a progressive infection with significant angio-invasion. Mucormycosis due to Mucor irregularis (formerly Rhizomucor variabilis var. variabilis), however, is exceptional in causing chronic cutaneous infection in immunocompetent humans, ultimately leading to severe morbidity if left untreated. More than 90 % of the cases known to date were reported from Asia, mainly from China. The nearest neighbour of M. irregularis is the saprobic species M. hiemalis. The aim of this study was to evaluate the taxonomic position, epidemiology, and intra- and inter-species diversity of M. irregularis based on 21 strains (clinical n = 17) by multilocus analysis using ITS, LSU, RPB1 and RPB2 genes, compared to results of cluster analysis with amplified fragment length polymorphism (AFLP) data. By combining MLST and AFLP analyses, M. irregularis was found to be monophyletic with high bootstrap support, and consisted of five subgroups, which were not concordant in all partitions. It was thus confirmed that M. irregularis is a single species at 96.1\xe2\x80\x93100 % ITS similarity and low recombination rates between populations. Some geographic structuring was noted with some localised populations, which may be explained by limited air-dispersal. The natural habitat of the species is likely to be in soil and decomposing plant material.
    Keywords: Biodiversity ; chronic cutaneous infection ; epidemiology ; Mucor hiemalis ; Mucor irregularis ; Mucormycosis ; taxonomy
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6935-6937 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaN heterojunctions have been fabricated and their electrical properties have been studied. It has been found that the heterojunction is a strongly rectifying contact with a rectification ratio greater than 106 and with an ideality factor close to 1. The current–temperature measurement shows an exponential decrease of current with increasing reciprocal temperature, from which the effective barrier height is determined to be 0.535 eV. The series resistance measured decreases with increasing forward voltage and finally tends to be constant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3557-3559 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 424-426 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al films deposited on Pt layers developed voids after annealing between 200 and 300 °C. Void formation in the Al was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The void growth seems to saturate when all the Pt is consumed to form Pt2Al3, and the rate of void growth decreases as the thickness of the initial Al film increases. We believe the controlling mechanism is diffusion along the Al/Pt interface made possible by compound formation there.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 946-947 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBaCuO superconducting thin films were prepared by multilayer deposition on different kinds of substrates. High Tc with an onset of 94 K and a zero resistance at 84 K has been obtained by deposition on pure ZrO2 substrates. The nature of zero resistance as well as the dR/dT characteristic above Tc and the influence of substrates are discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1341-1343 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1-μm-wide Al lines were passivated at 300 °C and annealed at 400 °C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral hole burning at room temperature is used as a technique to compare optical nonlinearities of semiconductor quantum dot materials prepared by the sol-gel and glass fusion techniques. In an effort to understand the mechanism of photodarkening in quantum dots and assess its effect on optical nonlinearities, we prepared and characterized three representative samples with similar dot sizes. We found that photodarkening can be reduced substantially by controlling the media surrounding the dots. The sol-gel derived samples with 80 wt % SiO2 do not exhibit appreciable photodarkening while the melt-quenched glasses with 56 wt % SiO2 exhibit strong photodarkening effects at room temperature which results in reduction of their optical nonlinearity by a factor of (approximately-equal-to)20 compared with the sol-gel derived samples.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1464-1466 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In passivated metal interconnects, grain boundary sliding during cooldown from high temperature process steps provides the driving force and sites for void nucleation. Furthermore, residual stresses are known to result in appreciable growth of voids during and after cooldown. The current driven coalescence of such voids is shown to constitute an important failure mechanism for the lines during electromigration testing.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1683-1685 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current–voltage measurements show that both C70/n-Si and C70/p-Si contacts are rectifying but their directions of rectification are opposite to each other. Thermal activation measurements at a fixed forward bias show an exponential dependence of current on the reciprocal of temperature, from which we determine the effective barrier height as 0.23 eV for C70/n-Si and 0.27 eV for C70/p-Si. Relative dielectric constant of solid C70 was determined to be 4.96 through the study of high-frequency capacitance–voltage characteristics for Ti/C70/p-Si structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...