Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2322-2324
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition in inverted tetrahedral pyramids on {111}B GaAs substrates are investigated. Cross-sectional atomic force microscopy images evidence a pronounced thickening of the GaAs quantum well layer at the tip of the pyramid, giving rise to a lens-like QD structure. Low-temperature photoluminescence and cathodoluminescence spectra show distinct luminescence from the dots, exhibiting filling of QD states separated by 33 meV at increased carrier densities. Luminescence linewidths of 15 meV and line energy variations of less than 5 meV are obtained across mm2 sample areas. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121810
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