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  • 1
    Electronic Resource
    Electronic Resource
    The enhanced Stark effects of coupled quantum wells and their application to tunable IR photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2598-2604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tunable asymmetric coupled quantum well far-infrared photodetector is proposed in this paper. The basic asymmetric coupled quantum wells are composed of two quantum wells separated by a thin barrier. In this way, the electron in each well interacts strongly with other electrons to achieve a large Stark tuning effect. The eigenenergies and the wave functions of the quantum-well structures are solved by the self-consistent method, and the effect of the exchange interaction on the ground-state subband has also been taken into account. The absorption coefficient is evaluated by the density-of-states formalism. Based on theoretical calculations, tuning ranges from 8.2 to 11.3 μm and 7.8 to 10.5 μm are predicted for the proposed asymmetric coupled-quantum-well structure and high-low coupled-quantum-well structure, respectively. This tuning capability is achieved by varying the applied electric field in the 20–90-kV/cm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355293
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  • 2
    Electronic Resource
    Electronic Resource
    Ellipsometry study on refractive index profiles of the SiO2/Si3N4/SiO2/Si structure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1732-1736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the refractive index profiles of SiO2/Si3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O2 ambient at the temperature range of 900–1050 °C for different lengths of time. It was found that for a nitride film thickness less than 250 A(ring), oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30–120 min. The activation energy was 2.24 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353208
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  • 3
    Electronic Resource
    Electronic Resource
    PtGe ohmic contact to n-type InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6108-6112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new ohmic contact system, Ge/Pt/Ge/Pt/n-InP, was studied systematically by measuring its specific contact resistance and by using Auger electron spectroscopy, x-ray-diffraction analysis, Rutherford backscattering spectroscopy, and scanning electron microscopy. It was found that the system has a wide temperature range for annealing, i.e., 450–550 °C, to achieve the specific contact resistance of the order of 1.0×10−5 Ω cm2. It can achieve a low specific contact resistance of 7.71×10−6 Ω cm2 when it is subjected to rapid thermal annealing at 500 °C for 30 s. The whole process is a solid phase reaction so that a smooth surface morphology is obtained. The ohmicity is due to the heavy doping of Ge in the regrown InP film. The contact system exhibits good thermal stability, being able to maintain a low specific contact resistance of 9.15×10−6 Ω cm2 for 20 h, 400 °C aging, and 2.77×10−5 Ω cm2 for 80 h aging. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360552
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  • 4
    Electronic Resource
    Electronic Resource
    The double resonant enhancement of optical second harmonic susceptibility in the compositionally asymmetric coupled quantum well (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2177-2183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The second harmonic susceptibility due to the intersubband transitions in the three-level GaAs/AlxGa1−xAs/AlyGa1−yAs compositionally asymmetric coupled quantum well (CACQW) under the influence of the applied electric field is investigated theoretically. The subband eigenenergy En of the CACQW structure could be designed to form an equally spaced energy-level ladder. Since the eigenenergy spacing could be designed to resonate with the pumping source, the second harmonic susceptibility could be greatly enhanced through the double resonance. Based on the theoretical calculations, the second harmonic susceptibility as high as 220 nm/V can be achieved for the CACQW. This is a more than three orders of magnitude enhancement as compared to that of the bulk GaAs. In addition to the design of CACQW structure, the double resonance can also be achieved by biasing the CACQW under a proper electric field. The extinguishment of the second order nonlinear optical effect by the applied electric field has also been studied. This phenomenon is attributed to the symmetry restoration of envelope wave functions of the CACQW structures under the quenching electric field Eoff. A simple physical model to estimate the Eoff has also been developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356278
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  • 5
    Electronic Resource
    Electronic Resource
    AuGePt ohmic contact to n-type InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9200-9205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work studied the AuGe to n-InP/ohmic contact system with the addition of Pt. It studied two contact schemes, i.e., Au/Ge/Pt/n-InP and Au/Pt/Au/Ge/n-InP. The specific contact resistances, the thermal stability, as well as the microstructure of the system, were systematically studied with the aid of scanning electron microscopy, Auger electron spectroscopy, Rutherford backscattering analysis, and x-ray diffraction. The processing condition to achieve the optimum contact resistance was also sought and it was found that a specific contact resistance of 2.15×10−6 Ω cm2 could be obtained if the Au/Ge/Pt/n-InP contact system was rapid thermal annealed at 550 °C for 30 s. The system was also found to be able to achieve low specific contact resistances for a wide range of anneal temperature from 400 to 550 °C. It was found that the Pt existence in-between AuGe and InP improved the surface morphology, the contact interface uniformity, and the thermal stability. The system could withstand a thermal aging at 400 °C for 80 h with only a minimal increase on the specific contact resistance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362592
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  • 6
    Electronic Resource
    Electronic Resource
    A double metal structure Pt/Al/n-InP diode (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 291-294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high performance double metal structure, Pt/Al/n-InP diode is discussed. The diode exhibits an effective barrier height of 0.74 eV, forward characteristics with an ideality factor n=1.11 over five decades, and a reverse leakage current of 1.34×10−4 A/cm2 at −3 V. A detailed study of the electrical characteristics and secondary ion mass spectroscopy analysis of the sample suggest that the high barrier height is due to formation of an interfacial layer at the contact interface. The diode exhibits good thermal stability, maintaining a barrier height of 0.70 eV after annealing at 300 °C for 10 h. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360673
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  • 7
    Electronic Resource
    Electronic Resource
    Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3447-3452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-k cobalt–titanium oxide (CoTiO3) and nickel–titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k value≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347405
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  • 8
    Electronic Resource
    Electronic Resource
    Anomalous doping behavior of in situ boron-doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1525-1527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of in situ heavily boron-doped polycrystalline silicon (poly-Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm−3 were obtained for the as-deposited films grown at 550 °C. For boron concentration beyond this level, the crystallinity of poly-Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly-Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110737
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characteristics of a stacked nitride/microcrystalline-silicon/oxide/silicon structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 24-26 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a stacked nitride/microcrystalline-silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room-temperature resonant tunneling effect is also observed for this structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109738
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrathin textured polycrystalline oxide with a high electron conduction efficiency prepared by thermal oxidation of thin polycrystalline silicon film on n+ polycrystalline silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3491-3492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents an ultrathin textured polycrystalline oxide (polyoxide) (≤100 A(ring)) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Qbd of the textured polyoxide could be more than 3000 C/cm2 even under 100 mA/cm2 stressing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109004
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