ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The feasibility of using Cu(Mg) alloy film as a gate electrode for thin-film transistor (TFT) liquid crystal displays has been investigated. When pure Cu was used as a gate electrode, severe interdiffusion occurred between Cu and the gases SiH4, NH3, and CF4 during plasma-enhanced chemical vapor deposition of a gate dielectric, SiNx, and dry etching of the SiNx. On the other hand, the deposition of a Cu(Mg) alloy film gives rise to the formation of a MgO/Cu bilayer structure with low Cu resistivity, good adhesion to SiO2, higher leakage current density, and excellent passivation capability. A hydrogenated amorphous silicon TFT with a MgO encapsulated Cu gate exhibited a gate voltage swing of 0.91 V/dec. and a threshold voltage of 6.8 V, resulting in a reduction of process steps and better performance. © 2001 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1424062
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