Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1034-1036
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new structure of a three-terminal hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction switching device is successfully developed. The device can be controlled by a gate bias. The switching voltage, holding voltage, and switching current all increase with an increase of undoped a-Si:H thickness. The electrical characteristics and switching phenomena of this device are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102607
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