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  • 1
    Electronic Resource
    Electronic Resource
    Influence of exposure to electromagnetic field on the cardiovascular system (2005)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 25 (2005), S. 0 
    Details
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 We examined whether extremely low frequency electromagnetic fields (ELF-EMF) affect the basal level of cardiovascular parameters and influence of drugs acting on the sympathetic nervous system. 2 Male rats were exposed to sham control and EMF (60 Hz, 20 G) for 1 (MF-1) or 5 days (MF-5). We evaluated the alterations of blood pressure (BP), pulse pressure (PP), heart rate (HR), and the PR interval, QRS interval and QT interval on the electrocardiogram and dysrhythmic ratio in basal level and dysrhythmia induced by β-adrenoceptor agonists. 3 In terms of the basal levels, there were no statistically significant differences among control, MF-1 and MF-5 in PR interval, QRS interval, mean BP, HR and PP. However, the QT interval, representing ventricular repolarization, was significantly reduced by MF-1 (P 〈 0.05). 4 (−)-Dobutamine (β1-adrenoceptor-selective agonist)-induced tachycardia was significantly suppressed by ELF-EMF exposure in MF-1 for the increase in HR (ΔHR), the decrease in QRS interval (ΔQRS) and the decrease in QT (ΔQT) interval. Adrenaline (nonselective β-receptor agonist)-induced dysrhythmia was also significantly suppressed by ELF-EMF in MF-1 for the number of missing beats, the dysrhythmic ratio, and the increase in BP and PP. 5 These results indicated that 1-day exposure to ELF-EMF (60 Hz, 20 G) could suppress the increase in HR by affecting ventricular repolarization and may have a down-regulatory effect on responses of the cardiovascular system induced by sympathetic agonists.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1474-8673.2004.00328.x
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360170
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  • 3
    Electronic Resource
    Electronic Resource
    Conversion acceptor and its contribution to hole scattering in annealed GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4795-4800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unintentionally doped GaAs crystals grown by the horizontal Bridgman method were annealed at temperatures in the range from 700 to 910 °C under As overpressure. The n-type crystals subjected to heat treatment under As overpressure lower than the growing pressure revealed a conductivity-type conversion to p type. The electrical conductivity, Hall coefficient, and photoionization cross sections were measured on the p-type samples, and the resulting analysis indicates that the conversion center is a double acceptor, most probably associated with CuGa defect. The activation energies attributable to the singly and doubly ionized states of the acceptor were found to be ∼150 and ∼380 meV at 0 K, respectively. The doubly ionized acceptor states turned out to provide strong space-charge scattering, which plays a crucial role in determining the hole behavior in the present material at high temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343234
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  • 4
    Electronic Resource
    Electronic Resource
    Selective growth of single InAs quantum dots using strain engineering (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 326-328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433169
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  • 5
    Electronic Resource
    Electronic Resource
    Strain effects on optical gain in wurtzite GaN (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 386-391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain effects on optical gain in hexagonal bulk GaN are calculated and explained in terms of the change in the effective hexagonal crystal field component. Qualitatively, even unstrained wurtzite structures correspond to cubic crystals with a proper biaxial stress applied. Such biaxial stress results in effective tensile deformation along the c axis ([111] direction in cubic crystals) and compressive strain in the perpendicular plane. Therefore, the light mode with a polarization vector parallel to the c axis is suppressed, while the mode with a perpendicular polarization is enhanced in wurtzite structures. Thus, compared to cubic structures with similar material parameters, a strong optical anisotropy of wurtzites results in enhanced gain for certain light polarizations, which make wurtzite structures superior for lower-threshold lasing. These qualitative arguments are illustrated by numerical calculations of optical gain in biaxially strained wurtzite GaN, based on a 6×6 envelope-function Hamiltonian. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365824
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  • 6
    Electronic Resource
    Electronic Resource
    Specificity of the lactoferrin and transferrin receptors in Neisseria gonorrhoeae (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Molecular microbiology 2 (1988), S. 0 
    Details
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Lactoferrin (LF) and transferrin (TF) are postulated to be important physiological sources of iron for Neisseria gonorrhoeae. A dot binding assay involving the use of gonococcal total membranes derived from cells grown in iron-limited conditions demonstrated the presence of separate receptors for LF and TF. The ligand and functional specificities of these receptors were examined in competition-binding and growth experiments. The results indicate that the LF and TF receptors are highly specific for the human protein, suggesting that this property may be partially responsible for conferring the human host specificity of N. gonorrhoeae.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2958.1988.tb00095.x
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  • 7
    Electronic Resource
    Electronic Resource
    Donoghue, DenisBrown, John Russell; Ehrenpreis, Irvin; Harris, BernardStephanchev, Stephen: Connoisseurs of Chaos: Ideas of Order in Modern American PoetryAmerican PoetryAmerican Poetry since 1945 : London, Faber and Faber, 1966London, Arnold, 1965New York and London, Harper and Row, 1965 (1967)
    Cambridge : Cambridge University Press
    Journal of American studies 1 (1967), S. 139-142 
    Details
    ISSN: 0021-8758
    Source: Cambridge Journals Digital Archives
    Topics: English, American Studies , History , Political Science , Sociology , Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1017/S0021875800006101
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  • 8
    Electronic Resource
    Electronic Resource
    Synergistic Effect of Hybrid Filler Contained Composites on Thermal Conductivity (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 544-545 (May 2007), p. 483-486 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Thermal conductivity of polyetheretherketone (PEEK) with fillers was investigated. Byadding the hybrid fillers to polymer the thermal conductivity of composites was increasedsignificantly. Thermal diffusivity of composites was measured using laser flash method. Synergisticfiller effect between particulate SiC and carbon fiber (CF) was observed for thermal conductivity.In a PEEK based composite, thermal conductivity increased to 8.25 W/m-K for a 50 vol% hybridfiller (SiC+CF) system, whereas the thermal conductivity of 40 vol% CF was 3.1 W/m-K and 50vol% of SiC was 2.4 W/m-K, respectively. The use of hybrid filler was found to be effective inincreasing thermal conductivity of its composites due to formation of effective thermal conductivepath. Experimental results of two-phase system were compared with Nielsen prediction
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.544-545.483.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    GEOMETRICALLY NON-LINEAR AND ELASTOPLASTIC THREE-DIMENSIONAL SHEAR FLEXIBLE BEAM ELEMENT OF VON-MISES-TYPE HARDENING MATERIAL (1996)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 39 (1996), S. 383-408 
    Details
    ISSN: 0029-5981
    Keywords: beam element ; material formulation ; J2 plasticity ; multistep integration ; continuation method ; Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: A three-dimensional elastoplastic beam element being capable of incorporating large displacement and large rotation is developed and examined. Elastoplastic constitutive equations are applied to the beam element based upon the assumption of small deformational strain leading to a material formulation which is completely objective for the application of stress update procedures. The continuum-type equations of plastic model of J2 mixed hardening are transformed into the beam equations by satisfying beam hypotheses. An effective stress update algorithm is proposed to integrate elastoplastic rate equations by means of the so-called multistep method which is a method of successive control of residuals on yield surfaces. It avoids severe divergence when the displacement increments become large which is usual for the continuation methods. Material tangent stiffness matrix is derived by using consistent elastoplastic modulus resulting from the integration algorithm and is combined with geometric tangent stiffness matrix. Different from other elements, the present element is shear flexible and can satisfy the plasticity condition in a pointwise fashion. A great number of numerical examples are analysed and compared with the literature. The proposed beam element is verified to be not only quite accurate but also very effective for the analyses of pre-buckling and large deflection collapse of spatial framed structures.
    Additional Material: 28 Ill.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    EQUIVALENCE BETWEEN ENHANCED ASSUMED STRAIN METHOD AND ASSUMED STRESS HYBRID METHOD BASED ON THE HELLINGER-REISSNER PRINCIPLE (1996)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 39 (1996), S. 3083-3099 
    Details
    ISSN: 0029-5981
    Keywords: EAS-method ; hybrid-method ; equivalence ; stress recovery ; Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: An equivalence between the enhanced assumed strain (EAS) method based on the Hu-Washizu principle, recently proposed by Simo and Rifai, and assumed stress hybrid (hybrid) method based on the Hellinger-Reissner principle is investigated. It is proved that not only the displacements but also the stresses of the EAS-elements calculated from the strains are identical to those of the corresponding hybrid-elements at least at the Gauss integration points provided the spaces of the trial functions for enhanced assumed strains and for assumed stresses satisfy the orthogonality and the inclusion or the invertibility condition. By virtue of this equivalence, a stress recovery procedure of the EAS-elements is devised. This procedure is variationally consistent and more efficient than those proposed by Simo and Rifai and Andelfinger and Ramm. Since the classical method of incompatible displacement modes is a special case of the EAS-method, this procedure also can be used to evaluate variationally consistent stresses for the non-conforming elements.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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