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  • 1
    Electronic Resource
    Electronic Resource
    Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3431-3439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Point defect kinetics are important for understanding and modeling dopant diffusion in silicon. This article describes point defect models and compares them with experimental results for intrinsically doped material. Transient dopant diffusion due to low dose silicon implant damage can be modeled with the same parameters as oxidation enhanced diffusion, and therefore provides an additional technique to probe point defect behavior. Parameters are extracted consistently for both experimental conditions and fit to Arrhenius relationships. The theory of dopant-defect pairing is found to be crucial in modeling the implantation damage effects, and the effective binding energies for boron-defect and phosphorus-defect pairs are experimentally determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351416
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  • 2
    Electronic Resource
    Electronic Resource
    Physical integrated diffusion-oxidation model for implanted nitrogen in silicon (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1894-1900 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scaling the gate oxide thickness is one of many process development challenges facing device engineers today. Nitrogen implantation has been used to control gate oxide thickness. By varying the dose of the nitrogen implant, process engineers can have multiple gate oxide thicknesses in the same process. Although it has been observed that nitrogen retards gate oxidation kinetics, the physics of how this occurs is not yet well understood. Since the retardation in oxide growth is due to the diffusion of nitrogen and its subsequent incorporation at the silicon/silicon oxide interface, the study of the diffusion behavior of nitrogen in silicon becomes important. Further, it is also necessary to study how this diffusion behavior impacts oxide growth. Models have been developed to explore these issues. The diffusion model is based on ab initio results and is compared to experimental results at two temperatures. The oxide reduction model is based on the diffusion of nitrogen to the surface. The surface nitrogen is coupled to the surface reaction rate of silicon and oxygen to moderate oxide growth. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430537
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of hydrostatic pressure on dopant diffusion in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3664-3670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A point-defect-based model for the stress effects on dopant diffusion in silicon is presented. Variations in binding energies and diffusivities of dopant-defect pairs under hydrostatic pressure are modeled, and a pressure-dependent dopant diffusion equation is derived. New experimental work was performed on boron pileup near dislocation loops, and compared to the model. Qualitative agreement is possible, which suggests that stress might be a significant effect in scaled modern device structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359944
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 732-734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low-dose Si implantation damage on diffusion of low-concentration P and As in Si wafers are investigated. Dopants are implanted at a low dose and subsequently preannealed to remove any self-damage. An enhanced diffusion of P is observed by directly comparing dopant profiles in damaged and undamaged regions. Monitoring effective diffusivity of P at various annealing temperatures and times reveals that the enhanced diffusion is a transient process with a time constant which is larger at lower temperature. This enhancement is larger and of longer duration the lower the annealing temperature is. In contrast to P, As diffusion in the damaged region does not show any enhancement. This implies that the defects induced by the Si implants have separate mechanisms for interaction with each type of dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104530
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature molecular beam epitaxy was used to grow boron doping superlattices DSLs in Si, with peak boron concentrations of 1×1018/cm3, and spike widths of 10 nm. Amorphization of these DSLs was achieved using a series of Si + implants of 30 and 112 keV, each at a dose of 1×1015/cm2, which placed the amorphous to crystalline interface between the first and second doping spikes. The dose rate of the Si + implants was varied from 0.13 to 1.13 mA/cm2. Post-implantation anneals were performed in a rapid thermal annealing furnace at 800 °C, for times varying from 5 s to 3 min. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Increasing the implant dose rate appears to increase the amount interstitial flux toward the surface but has no observable effect on the flux into the crystal. Transmission electron microscopy was used to study the end of range defect evolution. Increasing dose rate was observed to decrease the end of range defect density. These observations are consistent with previous findings that indicate the amount of backflow toward the surface decreases as the end of range loop density increases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120260
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  • 6
    Electronic Resource
    Electronic Resource
    The stress assisted evolution of point and extended defects in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1138-1146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As semiconductor devices are scaled to sub-micron dimensions, they are becoming more complex in geometry and materials. Stress related problems are therefore pervasive and critical in ultralarge scale integrated technology. High levels of stress can cause severe degradation of device characteristics by generating and propagating dislocations in the silicon substrate. Furthermore, stress in the silicon substrate can cause dopant redistribution to an extent it can no longer be neglected when designing scaled devices. In this study the effect of stress, generated from patterned nitride stripes on silicon, on the diffusion of phosphorus and evolution of ion-implanted dislocation loops is investigated. Phosphorus displays retarded diffusion, while the dislocation loops are smaller and less dense in the compressive regions under the nitride film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365880
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of implanted nitrogen in silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2282-2284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of thinner gate oxides and their thickness control is one of many challenges in scaling technologies today. Nitrogen implantation can be used to control gate oxide thicknesses. This article reports a study on the fundamental behavior of nitrogen diffusion in silicon. Nitrogen was implanted as N2〈sup ARRANGE="STAGGER"〉+ at a dose of 5×1013 ions/cm2 at 40 and 200 keV through a 50 Å screen oxide into Czochralski silicon wafers. Furnace anneals at a range of temperatures from 650 to 1050 °C have revealed anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/silicon-oxide interface. Qualitative modeling of this behavior is also discussed in terms of the time taken to create a mobile nitrogen interstitial through the kickout, Frenkel pair, and the dissociative mechanisms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372173
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of implantation-induced dislocation loops and interstitials in silicon is studied. Experiments under dry oxidation conditions consistently show a significant reduction of OED (oxidation enhanced diffusion) of boron in a buried layer due to very efficient interstitial capturing action of dislocation loops, suggesting diffusion-limited dislocation loop growth. Simple analytic solution of interstitial supersaturation and analysis of the data in terms of time dependence of the OED suppression demonstrate that the interaction of dislocation loops and interstitials is not a reaction-limited but a diffusion-limited process. Simulations incorporating the model for the interaction mechanism agree with both secondary ion mass spectroscopy and transmission electron spectroscopy data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112325
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  • 9
    Electronic Resource
    Electronic Resource
    Phosphorus diffusion in isoconcentration backgrounds under inert conditions in silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1388-1389 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusivity of phosphorus in isoconcentration backgrounds under inert conditions in silicon is investigated. Phosphorus is implanted at low dose into silicon wafers that are constantly doped with arsenic and boron. These samples are annealed to remove any damage. Secondary ion mass spectroscopy (SIMS) measurements are taken of these as-implanted samples. The wafers are then diffused at both 900 and 1100 °C for 60 and 30 min, respectively. The wafer profiles are then measured using SIMS. The diffusivity of phosphorus is measured for five different dopant concentrations. The results show that a double-negative interstitial component of phosphorus is needed to adequately model the data. Also, the heavily doped boron sample shows a significantly retarded diffusivity at 1100 °C which suggests phosphorus-boron pairing or significant strain effects on diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108688
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  • 10
    Electronic Resource
    Electronic Resource
    Two-dimensional study on the effects of nonamorphizing silicon implantation damage on phosphorus diffusion (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1254-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new experimental study is performed to determine the lateral extent of silicon implantation damage on diffusion in silicon. The experimental technique is designed to allow easy comparison between damaged and nondamaged areas to facilitate specific measurements. Junction depth is measured under stripes of varying widths that protect from implantation damage as well as at points that receive the full amount of implantation damage. A roughly exponentially decaying profile of junction depth as a function of increasing stripe width is observed. Good correlation between measured and suprem−iv predicted values is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110856
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