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  • 1
    Electronic Resource
    Electronic Resource
    Ellipsometric determination of thickness and refractive index at 1.3, 1.55, and 1.7 μm for In(1−x)GaxAsyP(1−y) films on InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2965-2971 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a definite need for accurate, but simple techniques for evaluation of refractive index and thickness of epitaxial In(1−x)GaxAsyP(1−y) films on InP. By ellipsometry, one can obtain these quantities for a transparent film on a substrate by a single measurement. We have calculated the ellipsometric angles Ψ and Δ for an In(1−x)GaxAsyP(1−y) film on InP at λ=1.3, 1.55, and 1.7 μm to determine the best experimental conditions. A 1 nm thick oxide layer on the top of the quaternary was found not to affect the Ψ and Δ at these wavelengths in a significant way. Futhermore, by studying the relative error in the refractive index and the thickness versus the error in the angle of incidence, we could deduce that at the optimum experimental conditions one can obtain the refractive index and the thickness with a 5% precision or better using ellipsometry. We have also measured the refractive index and the thickness by null ellipsometry for several In(1−x)GaxAsyP(1−y) films with different composition grown by metal organic vapor phase epitaxy on InP substrates. The refractive index data agree well with those obtained by other techniques as reported in literature and the thicknesses agree within the experimental precision with the nominal thickness obtained by the growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353028
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  • 2
    Electronic Resource
    Electronic Resource
    The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6855-6860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on novel results from a systematic study of excitonic transitions in high quality metalorganic vapor phase epitaxy grown InxGa1−xAs/InP quantum wells (QWs). The electronic structure of the QWs has been studied as a function of QW width as well as the built-in strain. The characterization has been performed by means of a combined Fourier transform photoluminescence (FTPL) and FTPL excitation study of the InxGa1−xAs/InP QWs. Detailed information on the energy positions for the excitons associated with various subbands (for the electrons, heavy and light holes) up to n=5 have been obtained. The experimentally determined energy positions have been compared with theoretical predictions based on an effective mass model and bulk deformation potential theory. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363752
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  • 3
    Electronic Resource
    Electronic Resource
    Study of vibrational properties of InGaAsP by far-infrared reflectivity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3085-3088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured room-temperature reflectivity in the far-infrared region (100–700 cm−1) of In1−xGaxAsyP1−y films grown by metalorganic phase epitaxy on InP substrate. The actual As content of the quaternary alloy (ranging from y=0.29 to y=1) was derived by combining photoluminescence and high-resolution x-ray diffraction results. Over the whole compositional range four different vibrational branches, corresponding to InAs-like, GaAs-like, InP-like, and GaP-like mode, have been observed, thus confirming the attribution of "four-mode behavior'' to the quaternary alloy. The frequency position of the four main peaks has been calculated within a valence-force-field model. The frequency shift of these peaks in the alloy with respect to the bulk values has been explained taking into account anharmonicity and strain effects by means of a simplified elastic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356158
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  • 4
    Electronic Resource
    Electronic Resource
    Interwell carrier transport in InGaAsP multiple quantum well laser structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3695-3697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present direct measurements of interwell carrier transport in InGaAsP quantum well (QW) laser structures performed by time-resolved photoluminescence. Conditions of originally empty and filled wells are explored. In both cases, the time for the hole transport across the structure is found to be of the order of tens of picoseconds. Comparison of experimental results and simulations allowed us to develop an adequate interwell carrier transport model that includes thermionic capture/emission over the QW interfaces and drift/diffusion in the barrier regions. We show that dynamic consideration of carrier densities and band bending for each QW are essential. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117192
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  • 5
    Electronic Resource
    Electronic Resource
    Extremely high hole concentration in GaAs by dual Mg/As implants (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2783-2786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of magnesium implants in GaAs has been found to increase drastically with coimplantation of arsenic and to depend strongly on the As implantation parameters. p-type carrier concentrations as high as 4×1020 cm−3 have been achieved for 5×1015 cm−2, 190-keV Mg+/1×1016 cm−2, 540-keV As2+ implants. The role of the As has been shown to block the Mg diffusion during the silicon-nitride-capped 5-min anneals at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341173
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  • 6
    Electronic Resource
    Electronic Resource
    Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4123-4127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared intersubband absorption in modulation-doped MOVPE-grown AlxGa1−xAs/GaAs single-quantum wells have been studied by Fourier transform infrared spectroscopy. High signal to noise ratio was obtained by utilizing the multiple internal reflection (MIR) technique and a quantitative model of the absorption for this geometry was developed. Overlapping from multiphonon absorption was eliminated by using radiation polarized in two orthogonal directions and taking the difference between the resulting spectra, only one of them exhibiting the intersubband peak. The absorption wavelengths and intensities were fitted to theoretical expressions and the dimensions of the quantum wells were compared with independent determinations by photoluminescence, double crystal x-ray diffraction, and Hall-effect measurements. A narrow linewidth of about 6 meV was measured, corresponding to a 0.1-ps lifetime of electrons in the excited state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341322
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  • 7
    Electronic Resource
    Electronic Resource
    Electron relaxation and capture in InGaAsP quantum well laser structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3164-3166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental investigations of electron relaxation in the confinement region and capture into the quantum wells are reported for InGaAsP/InP laser structures. The measurements are performed by time-resolved photoluminescence using upconversion. The value for the electron capture of 1.4 ps is obtained. No dependence on the potential profile of confining layers has been observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113710
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  • 8
    Electronic Resource
    Electronic Resource
    Photoexcited carrier transport in InGaAsP/InP quantum well laser structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2057-2059 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of photoexcited carrier transport in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a step-like profile of the graded layers are performed by time-resolved photoluminescence using upconversion. In all the investigated structures ambipolar carrier motion can be characterized by a constant velocity of (1.5±0.2)×106 cm/s. The experimental results are discussed in terms of step-driven and ordinary diffusion. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112792
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  • 9
    Electronic Resource
    Electronic Resource
    1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 253-255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInAsP/InP Fabry–Perot-type buried-heterostructure quantum well laser operating at 1.55 μm has been realized utilizing iron-doped semi-insulating InP around vertical mesas fabricated by reactive ion etching using methane and hydrogen. A maximum cw output power of 19 mW has been achieved on as-cleaved chips of 300 μm length with a quantum efficiency of 21% per facet. Threshold currents lie between 20 and 25 mA. As low as 2 Ω series resistance has been measured despite an ohmic contact area not exceeding that of the 2-μm-wide mesa. A 3 dB bandwidth of 7.5 GHz at 12 mW output power is obtained from the small-signal frequency modulation measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105612
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  • 10
    Electronic Resource
    Electronic Resource
    Femtosecond electron transport in quantum well laser structures with step-graded confinement layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2098-2100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence measurements of electron transport are reported in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a steplike grading profile. It is found that electron transfer over the graded-gap region occurs on a subpicosecond time scale. The upper time limit for the electrons to pass one step of 22 nm width is 250 fs. The fast transfer times imply that the electron transport across the graded region is not affected by the presence of the steps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113915
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