Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1775-1777
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High quality thin silicon epitaxial films have been grown on heavily doped p+ substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The epitaxial growth kinetics have been studied by examining the dependence of growth rate on the deposition temperature, the volume percentage of SiH2Cl2, and the total gas flow rate. Submicron epitaxial layers with hyperabrupt dopant transition (〈200 A(ring)/decade) and excellent crystalline perfection with low defect density have been obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101288
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