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  • 1
    Electronic Resource
    Electronic Resource
    Dichroism in solutions of fullerene C70 in nematic hosts (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 7568-7569 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100173a003
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray structural characterization of larger CdSe semiconductor clusters (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7282-7290 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: X-ray powder patterns obtained from three different types of 35–40 A(ring) CdSe nanoclusters are analyzed. We simulate the effects of thermal fluctuations, stacking faults, surface reconstructions, and bond compressions on powder patterns of CdSe clusters using the Debye formula. We find that the spectra of capped and annealed CdSe particles grown in inverse micelles are best fit by a mixture of crystalline structures intermediate between zinc-blende and wurtzite. We describe a new preparation for CdSe clusters, the structure of which appears to be well-defined wurtzite with, on average, less than one stacking fault per cluster. Thermal effects are found to be important and to mask the subtle effects of likely surface and core reconstructions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457295
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropic magnetism and resistivity of an Al70Ni15Co15 decagonal quasicrystal : The 6th joint magnetism and magnetic materials (MMM)−intermag conferenc (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6110-6112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of dc magnetization and electrical resistivity studies of a single-domain Al70Ni15Co15 decagonal quasicrystal. The temperature dependence and anisotropy of the electrical resistivity are in excellent agreement with previous results for a similar sample. The magnetic properties were determined by superconducting quantum interference device magnetometry over the temperature range 1.8–300 K for magnetic fields between 10 Oe and 10 kOe. The magnetic behavior can be characterized by a weak ferromagnetic component M0(H) which saturates in moderate fields (H≈1 kOe) and a differential susceptibility, χ0=ΔM/ΔH, obtainable from the high-field data. The observed magnetization M=χ0H+M0 is slightly anisotropic and essentially temperature independent below room temperature. For H parallel to the quasicrystal axis, we observe χ0(parallel)=7.1×10−7 emu/g and M0(parallel)=2.0×10−3 emu/g. For H perpendicular to the quasicrystal axes, we obtain χ0⊥=8.2×10−7 emu/g and M0⊥=1.7×10−3 emu/g. An anisotropic and weak superconducting transition was observed at T=3.2 K, corresponding to a superconducting volume fraction of only ∼10−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358321
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  • 4
    Electronic Resource
    Electronic Resource
    Processing of a TlBa2Ca2Cu3Oy superconducting film by liquid-gas solidification (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2836-2838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We succeed for the first time in growing a superconducting TlBa2Ca2Cu3Oy film on MgO〈100〉 substrate using a liquid-gas solidification process (LGS). The films are grown in situ; they are deposited by LGS. There is no post-anneal or compensation of Tl applied after the initial deposition. The as-grown film shows a flat and uniform morphology with the c axis perpendicular to the MgO〈100〉. It exhibits a resistant transition onset of 117 K and zero resistance at 103 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104751
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of epitaxial YbBa2Cu3O7 superconductor by liquid-gas-solidification processing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 705-707 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductive films of YbBa2Cu3O7 have been epitaxially grown on SrTiO3 substrate by a novel liquid-gas-solidification process. A layer of metallic YbBa2Cu3 melt was coated on the substrate and in situ oxidized. The oxide films grown on the SrTiO3 (100) substrate are epitaxially oriented in structure with the c axis normal to the plane film. Values of Tc (R=0) of 82 K with a transition width of 1 K have been achieved. The critical current density Jc is typically 105 A/cm2 at 50 K and 104 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100555
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  • 6
    Electronic Resource
    Electronic Resource
    In situ epitaxial growth of Y1Ba2Cu3O7−x films by molecular beam epitaxy with an activated oxygen source (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2683-2685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented, epitaxial Y1Ba2Cu3O7−x thin films were prepared on MgO(100) by molecular beam epitaxy at a substrate temperature of 550–600 °C. The in situ growth was achieved by incorporating reactive oxygen species produced by a remote microwave plasma in a flow-tube reactor. The epitaxial (001) orientation is demonstrated by x-ray diffraction and ion channeling. In situ reflection high-energy electron diffraction showed that a layer-by-layer growth has produced a well-ordered, atomically smooth surface in the as-grown tetragonal phase of an oxygen stoichiometry of 6.2–6.3. A 500 °C anneal in 1 atm of O2 converted the oxygen content to 6.7 to 6.8. Typical superconducting transport properties of an Y1Ba2Cu3O7−x film 1000 A(ring) thick are ρ(300 K)=325 μΩ cm, ρ(300 K)/ρ(100 K)=2.4, Tc(onset)=92 K, and Tc(R=0)=82 K. The transport Jc at 75 K is 1×105 A/cm2, and increases to 1×106 A/cm2 at 70 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100545
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of metastable SnGe alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 578-579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown homogeneous alloys of Sn1−xGex with 0.01〈x〈0.1 by molecular beam epitaxy on 〈100〉 InSb substrates. The Sn-Ge system is immiscible due to differing equilibrium crystal structures at the growth temperature. By stabilizing the diamond cubic α-Sn with the InSb template, we have created a metastable miscibility region for alloying Sn and Ge. Pure α-Sn grown on 〈100〉 InSb shows a tetragonal expansion perpendicular to the substrate because of the slightly larger lattice parameter of α-Sn. As the smaller Ge atom is added, the strain converts from compressive to tension resulting in an effective 1.66% tetragonal contraction in the growth direction for Sn0.92Ge0.08.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101838
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  • 8
    Electronic Resource
    Electronic Resource
    Superconducting Tl-Ba-Ca-Cu-O films by sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2102-2104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Tl-Ba-Ca-Cu-O thin films 0.2–1.0 μm thick have been prepared on MgO(100) and SrTiO3(100) substrates by dc diode sputtering using a single oxide target. Films containing primarily the Tl2Ba2Ca1Cu2O8 phase were obtained with a Tc (R=0) at 102 K and a transport Jc of 104 A/cm2 at 90 K. For the nearly pure phase Tl2Ba2Ca2Cu3O10 films, the Tc's (R=0) are higher at 116 K and the transport Jc's at 100 K are of 105 A/cm2. Both types of films show a strong preferred orientation with the c axis perpendicular to the film plane. The rocking curve of the Tl2Ba2Ca2Cu3O10 films is 0.32° wide and the typical grain size is over 10 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100501
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  • 9
    Electronic Resource
    Electronic Resource
    YbBa2Cu3O7 epitaxial films grown by a Ag-enhanced liquid gas solidification process (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 191-193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of Ag addition on the epitaxially grown YbBa2Cu3O7 superconductor on a SrTiO3 (100) substrate by the liquid gas solidification process have been investigated. Ag acts as flux and does not incorporate in the oxide formation. Its addition, however, enhances the transport properties resulting from a reduction in film-substrate interaction. Values of Tc(R=0)=90 K and Jc(77 K, H=0)=3×104 A/cm2 can be achieved reproducibly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102403
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  • 10
    Electronic Resource
    Electronic Resource
    Structure and stability of metastable α-Sn (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1439-1441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time the growth of high quality films of metastable α-Sn. The structural properties of the molecular beam epitaxy grown metastable α-Sn are investigated by means of in situ reflection high-energy electron diffraction (RHEED) analysis, scanning electron microscopy including electron channeling patterns, and high-resolution x-ray scattering techniques. Scanning electron microscopy reveals a growth morphology of smooth and uniform surfaces. RHEED patterns yield a highly streaked (2×1) surface reconstruction suggesting a layer-by-layer growth mechanism. Triple-axis x-ray diffractometry was employed to determine structural parameters and the strain distribution. In-plane rocking scans of the (400) reflection indicate a half width of 3 arcsec for the heterostructure α-Sn/InSb. Out-of-plane scans reveal a tetragonal distortion perpendicular to the film plane, contributing a net strain of ∼0.28%. These results are in quantitative agreement with values calculated using simple elastic theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101580
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