ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics. The detector using Cr/Au Schottky metal fingers with 4m spacing on a large active area of 300×300m2 shows a low dark current of 38nA at 10V. This corresponds to a dark current density of 0.42pA/m2 and is, to our knowledge, the best dark current ever obtained from a large area InGaAs MSM PD. The device also shows a low capacitance of 0.8pF and a high 3dB bandwidth of 2.4GHz. By fitting the measured frequency response to a model consisting of both RC time and transit time limited responses, we show that the device has an RC time and a transit time limited 3dB bandwidth of 3.0 and 4.9GHz, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1018589903010
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