ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have made thickness dependent in situ resistivity measurements on sputtered metal films in real time during film deposition. These measurements allow the separation of the bulk and finite-size contributions to the resistance. The metals studied were Co, Cu, Ni80Fe20, and Ta, deposited in differing orders to isolate the scattering at interfaces relevant to common spin-valve structures. We see sources of excess diffuse scattering in bilayers of Ta with the 3d metals, regardless of the deposition order. We see a similar effect for Co on Cu, but not for Cu on Co. In some cases, we see significant changes in film resistance from overlayers as thin as 2 Å. These results show that the two Cu interfaces in a spin valve are not equivalent, and that other interfaces in the structure may be important. We discuss the origin of the diffuse scattering in terms of interdiffusion or a roughening transition during the initial deposition and island coalescence. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370755
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