Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 671-673
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new carrier compensation mechanism has been investigated in nitrogen-doped ZnSe films grown by low-pressure metalorganic vapor phase epitaxy. Photoconduction spectrum measurements have revealed the existence of deep defect levels located just above the center of the band gap in N-doped, highly compensated films. These results combined with photo-Hall measurements (under infrared illumination) have revealed that these midgap defect levels act as deep donors, and play an important role in carrier compensation in shallow acceptor doped ZnSe films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105360
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