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  • 1
    Electronic Resource
    Electronic Resource
    Study on a Grinding Quality Assessing Method Based on Fuzzy Decision Combined with Analytic Hierarchy Process (AHP) (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 359-360 (Nov. 2007), p. 543-547 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The grinding quality assessing is a complex decision-making process, which mustoptimize and balance multi-influence factors. A grinding quality assessing method based on fuzzysynthetic evaluation theory combined with analytic hierarchy process (AHP) is presented in thispaper, and used to quality assessing for grinding process. The result of analyzing example indicatesthat this method can be used to estimate grinding quality based on the monitoring result of grindingprocess and grinding condition, and to assist grinding worker to select optimum grinding parametersfor the steady grinding quality
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.543.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    A Method to Improve Uniformity of Material Removal of Chemical Mechanical Polishing in LCOS Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 364-366 (Dec. 2007), p. 686-689 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: LCOS panel as a kind of new LCD is a sort of liquid crystal display device that operatesin a reflective mode. In this paper, a method on realising planarization in large scale liquid crystalon silicon with chemical mechanical polishing (CMP) technology is discussed in detail. The nonuniformdistributions of polishing pressure and the relative speed between the wafer and thepolishing pad are main factors affecting the within-wafer non-uniformity. This research integrateda physical mixed model of chemical-mechanical polishing that combineed the effects of polishing padroughness and slurry hydrodynamic pressure. Based on the contact mechanics and modified Reynoldsequation, the asperity contact and fluid flow pressures were calculated. Taking into account theeffects of kinematic parameters, the material removal rate(MRR) on silicon panel front surface wasobtained. In the last section the design of a schematic carrier with multi-zone, in which thecompensation back pressure can be applied, is presented. The model and the design can be used forproviding theoretical guide to the development of CMP equipments and selection of the kinematicvariables in CMP process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.364-366.686.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Study on the Wavelet Transform Based Monitor Signal Processing Method for Grinding Wheel Dull (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 375-376 (Mar. 2008), p. 598-602 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A processing method based on wavelet transform for the monitoring signals of grindingwheel dull is presented. The noise-falling method based on wavelet transform is used to process AEsignals, grinding force signals and the electric current signals of main axis motor produced in grindingprocess, and the processing results can be used to identify grinding wheel state. Test result indicatesthat the grinding wheel state can be identified exactly by these three kinds of signal characteristics,and have higher identified precision
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.375-376.598.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental Researches on Precision Grinding of KDP Crystal (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 359-360 (Nov. 2007), p. 113-117 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The KDP (Potassium Dihydrogen Phosphate) crystal, used as an important photoelectronpart in the laser nuclear fusion system, is a typical kind of hard-to-machine material because of itssoft, brittle, anisotropic property and nano-scale requirement for the shape and plane precision.Based on the experiments of the KDP crystal’s grindability, certain process parameters, such as thewheel granularity, the grinding depth and the workpiece’s feeding speed etc., and their influenceson the grinding force and the surface roughness of KDP workpiece are analyzed. Furthermore, someKDP crystal’s typical surface damages in grinding are analyzed and some technical approaches toincreasing the ultraprecision machining surface quality of KDP crystal are suggested as well
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.113.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 364-366 (Dec. 2007), p. 739-744 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: MgO single crystal is mainly used as substrate for high temperature superconductor film.Surface quality of MgO substrate has significant effect on the function of high temperaturesuperconductor film. MgO single crystal is a typical hard and brittle material, and is easily cleavedalong the {100} face, so some defects are always generated on the substrate surface while lappingand polishing, which badly affects the surface quality of the substrate. In this paper, a kind oftypical defect, the triangular fracture defect which is on the substrate surface after lapping andpolishing, is analyzed in detail. According to the structure characteristics of the MgO single crystal,and based on the dislocation reaction theory, a formation mechanism of the triangular fracturedefect in lapping and polishing processes is explored. Through the single grain scratch test indifferent directions on the polished surface of MgO{100} single crystal substrates, the formationmechanism of triangular fracture defect in lapping and polishing processes is verified. And duringthe scratch test, the plastic flow of the MgO single crystal material beside the scratch was observed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.364-366.739.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Investigation on Material Removal Rate in Rotation Grinding for Large-Scale Silicon Wafer (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 362-368 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper, the formula of material removal rate (MRR) in wafer rotation grindingprocess is deduced based on kinematics. The main effect on MRR of the grit size and the process parameters, including the rotational speed of the cup grinding wheel, the down feed rate of the grinding wheel spindle and the rotational speed of the chuck table, is both theoretically and experimentally investigated. The influence on MRR of the cup wheel grinding status, the geometric dimension of the cup-grinding wheel, the rigidity of the grinding machine and the coolant is also analyzed. The investigating results show that, the increase of the grit size and the down feed rate of the cup grinding wheel results in great increase of the MRR; the MRR increases as the rotational speed of the cup wheel increases whereas the MRR reduces and the ground surface becomes bad due to size effect if the rotational speed of the cup wheel is overlarge; in normal grinding, the MRR decreases as the rotational speed of the chuck table increases. The results provide a theoretical basisto improve grinding efficiency, reduce grinding cost and select the proper parameters of grinding process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.471-472.362.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 26-31 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculationand analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.471-472.26.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Study on Removal and Embedding Mechanism of CdZnTeUsing Loose Abrasive (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 24-25 (Sept. 2007), p. 201-210 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Cd1−xZnxTe (CZT) is an excellent ternary compound semiconductor. CZT is the mostsuitable substrate material for Hg1−yCdyTe epitaxial growth and can make the detector itself. Theresearchers have done a lot of works on the hard and brittle material removal mechanism in lappingprocess. however, no published articles are available regarding the removal mechanism and theabrasives embedding mechanism of the soft and brittle material in lapping progress .and there is itsown characteristic if the hard abrasives machining the soft and brittle material in lapping progress,the objective of this paper is to build the physical model ,and divide the abrasive into four kinds ofabrasives , they are two-body abrasive ,three-body abrasive ,embedded abrasive and small abrasive,and the authors analyze the effects on the material surface of the above abrasives. At last, designseries of experiments, through analyzing the results and observe the surface morphology, theauthors prove that the physical model is correct
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.201.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    A Method for Grinding Mode Identification in Grinding of Silicon Wafers (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 24-25 (Sept. 2007), p. 255-260 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A new non-destructive method was developed to identify the grinding mode of siliconwafers, which is based on the information of subsurface cracks extracted from the surfacetopography of the ground silicon wafers measured with a 3D surface profiler. We examinedextensive measurement data of the surface topography of silicon wafers processed by single graingrinding or real grinding operation, and our results show that the information about median crackscould be captured if the lateral sampling interval of the 3D surface profiler is small enough, even ifthe grain depth of cut is below 20nm. If the maximum valley of the measured surface topography isapproximately equal to the grain depth of cut, surface formation will be under ductile mode,whereas, if the maximum valley is several times larger than the grain depth of cut, surfaceformation will be under brittle mode. According to this criterion, silicon wafers ground by ductilemode or brittle mode could be identified rapidly and conveniently. Experimental validation showsthat this method is accurate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.255.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Polishing of Free-Standing CVD Diamond Films by the Combination of EDM and CMP (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 111-118 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Although various diamond polishing techniques have been studied for many years, noindividual method can polish free-standing CVD diamond film with high efficiency and highpolishing quality. This paper investigates polishing CVD diamond film by the combination ofelectro-discharge machining (EDM) and chemical mechanical polishing (CMP). Scanning electromicroscopy, Optical microscopy, Energy dispersive X-ray analysis, Talysurf surface profiler andRaman spectroscopy were used to evaluate the surface integrity and quality of diamond film beforeand after polishing. Based on the experimental results, the material removal during EDM processcan be a chemo-mechanical process, including gasification, melting, sputtering, oxidation andgraphitization. While in CMP process, diamond was removed under the mechanical andtribochemical interaction. The combination of EDM and CMP has advantages of high efficiency,high polishing quality and low damage. It is suitable to polish large area free-standing CVDdiamond film
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.111.pdf
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