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  • 1
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    Theory of Dislocations (1992)
    Krieger Publ. Comp.
    In:  Malabar, Krieger Publ. Comp., vol. 5, no. XVI:, pp. 1-14, (ISBN 0-89871-521-0)
    Details
    Publication Date: 1992
    Keywords: Textbook of physics ; Textbook of geophysics ; Dislocation ; Elasticity
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    BIBLIOGRAPHY SEISMOLOGY
  • 2
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    Introduction to the mathematical theory of dislocations (1969)
    The American Society of Mechanical Engineers
    In:  Bull., Polar Proj. OP-O3A4, Mathematical Theory of Dislocations, New York, The American Society of Mechanical Engineers, vol. 65, no. XVI:, pp. 1-24, (ISBN: 3-540-23712-7)
    Details
    Publication Date: 1969
    Keywords: Dislocation ; Elasticity theory of dislocations
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    BIBLIOGRAPHY SEISMOLOGY
  • 3
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    Shear response of Σ3{112} twin boundaries in face-centered-cubic metals (2011)
    American Physical Society (APS)
    Details
    Publication Date: 2011-02-20
    Description: Author(s): J. Wang, A. Misra, and J. P. Hirth Molecular statics and dynamics simulations were used to study the mechanisms of sliding and migration of Σ3{112} incoherent twin boundaries (ITBs) under applied shear acting in the boundary in the face-centered-cubic (fcc) metals, Ag, Cu, Pd, and Al, of varying stacking fault energies. These studie... [Phys. Rev. B 83, 064106] Published Fri Feb 18, 2011
    Keywords: Structure, structural phase transitions, mechanical properties, defects
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society (APS)
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    PAPER CURRENT
  • 4
    Electronic Resource
    Electronic Resource
    COEFFICIENTS OF EVAPORATION AND CONDENSATION (1960)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 64 (1960), S. 619-626 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100834a024
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    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Critical layer thicknesses for inclined dislocation stability in multilayer structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1386-1394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical thickness for stability of dislocations on glide planes inclined to the interfaces in a strained-layer structure is derived. Results are presented for both a single embedded layer and a multilayer structure (superlattice). Both the equilibrium array for the complete removal of coherency strain and less-dense arrays are considered. Results are compared with the previous treatment of Lomer misfit dislocations and with other treatments of multiple dislocation arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351750
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  • 6
    Electronic Resource
    Electronic Resource
    A rebound mechanism for Lomer dislocation formation in strained layer structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2169-2175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rebound mechanism is proposed for the formation of Lomer misfit dislocations at interfaces in strained layer structures. The model involves dislocation nucleation at a free surface, glide to the interface, reaction to form the Lomer dislocation and another nucleated dislocation, and glide of the latter to the free surface. For either a strained overgrowth layer or a layer within a multilayer structure, where another interface would replace the free surface, the process is energetically favorable once conditions favor the initial nucleation event. The mechanism is consistent with experimental observations of interface structure, including its thickness dependence, for semiconductor and metal systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348745
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of solute doping on the high-temperature deformation behavior of GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2508-2512 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of isovalent dopants in the high-temperature deformation of GaAs has been studied in the temperature range 500–1150 °C. Additions of In, Sb, and B increase the critical resolved shear stress for deformation at a given strain rate and result in lowering the dislocation density of as-grown liquid-encapsulated Czochralski GaAs crystals. Phosphorus, because of its minor influence on the lattice strain, shows little enhancement of the yield stress. These results are consistent with a solute hardening model, in which the solute atom surrounded tetrahedrally by four Ga or As atoms comprise the hardening cluster. Codoping with In and Si hardens GaAs, but codoping with Si is less effective than the isovalent solutes In, Sb, and B, and produces softening at high temperatures. The effect of solutes on both dislocation nucleation and multiplication are reviewed here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342797
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  • 8
    Electronic Resource
    Electronic Resource
    Deformation behavior of undoped and In-doped GaAs in the temperature range 700–1100 °C (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4130-4134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compressive deformation of undoped and In-doped GaAs single crystals has been carried out in [001] and [123] orientations in the temperature range 700–1100 °C. Indium additions, at levels of 1–2×1020 atoms cm−3, result in critical resolved shear stress (CRSS) values that are about twice as large as the undoped crystals in the temperature range of 700–1100 °C. The CRSS was weakly dependent on temperature in the temperature range investigated as expected for a model of athermal solid solution hardening. The CRSS value of 3.3 MPa for the In-doped crystal is sufficient to eliminate profuse dislocation formation in a 75-mm-diam crystal on the basis of current theories for the magnitude of the thermal stress experienced during growth. The results also suggest that the process of dislocation climb is slowed appreciably by In doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339129
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  • 9
    Electronic Resource
    Electronic Resource
    Damage of coherent multilayer structures by injection of dislocations or cracks (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2372-2376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental evidence indicates that coherent multilayer structures (strained superlattices) can be grown in a damage-free state when the thickness of the layer is less than a critical value. The resistance of such structures to subsequent damage by dislocation or crack injection is examined in the present study. The structures are determined to exhibit damage resistance that decreases as either the layer thickness or the coherency strains increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337148
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  • 10
    Electronic Resource
    Electronic Resource
    High-temperature hardness of Ga1−xInxAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4136-4140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substantial solid-solution strengthening of GaAs by In acting as InAs4 units has recently been predicted for an intermediate-temperature plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. Hardness measurements at high temperatures up to 900 °C have been carried out on (100) GaAs, Ga0.9975In0.0025As, and Ga0.99In0.01As wafers, all of which contain small amounts of boron. Results show a significant strengthening effect in In-doped GaAs. A nominally temperature-independent flow-stress region is observed for all three alloys. The In-doped GaAs shows a higher plateau stress level with increasing In content. The results are consistent with the solid-solution strengthening model. The magnitude of the solid-solution hardening is sufficient to explain the reduction in dislocation density with In addition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337495
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