Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3343-3345
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In secondary ion mass spectroscopy analysis of insulating films, a time dependence of the secondary ion intensity [Is(t)] was measured. When the surface charging was slightly reduced, a minimum intensity (Ib) appeared in Is(t). It was found that Ib was inversely proportional to the thickness and resistivity of the film sample. Consequently, the measurements of Ib revealed that the resistivity of the sputtered silicon-oxide film was higher when the film was grown in lower oxygen pressure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339295
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