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  • 1
    Electronic Resource
    Electronic Resource
    Negative ion beam technology for materials science (invited) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2368-2373 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Negative-ion beams can be used in materials science, i.e., ion implantation and ion beam deposition, since various types of high current negative-ion sources have recently been developed. Two types of these the NIABNIS and rf sputter types, were developed by the present authors. There are major differences between negative- and positive-ion implantations with regard to beam transport (collisional cross sections with residual gas particles) and secondary electron emission factors, but little difference in the projected ranges of implanted ions. By using negative ions in ion beam deposition, the effects of the kinetic energy and number of atoms of an ion may be clarified because negative ions have much less reactivity resulting from their internal potential energy of electron affinity than do positive ions resulting from their ionization potential.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142932
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  • 2
    Electronic Resource
    Electronic Resource
    Intensification of an impregnated-electrode-type liquid-metal ion source by multiplying the number of tip-and-reservoirs : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2438-2440 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An impregnated-electrode-type liquid-metal ion source has been developed which utilizes a linear array of emitters. This ion source is constructed by placing two emitters that consist of porous ion-emission tips and reservoirs for liquid metal. The emitter is equipped with multiple ion-emission points in a line. Two tip-and-reservoirs (TAR's) are fixed by respective knife-edged electrodes. Utilization of multiple TAR's has an advantage of reducing heater current by connecting them electrically in series. The performance characteristics of the ion source have been investigated using germanium as a source material. Ion emission from 17 points has been achieved with this arrangement; a current of 4.6 mA have been obtained immediately following the ion source. These results indicate that it is possible to extract a current approximately proportional to the number of emission points. The result also implies that a further increase in intensity can be expected by adding more TAR's to the array.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142903
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  • 3
    Electronic Resource
    Electronic Resource
    Development of oxygen ion source with microwave plasma cathode : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2595-2597 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of broad-beam ion source, which is a bucket-type ion source with a microwave plasma (MP) cathode instead of conventional thermionic filaments, has been developed. Producing a high-density plasma in the MP cathode under the electron-cyclotron-resonance (ECR) condition, this cathode has a capability of a high-current electron emission and has a long lifetime (more than 100 h for an oxygen gas). The structure of this cathode is very simple and compact. Rod antennas connected to coaxial lines for introducing the microwave power (2.45 GHz) and a permanent magnet for producing the ECR condition are major components. In the bucket-type ion source with the MP cathode, the high-current ion beams of 230 mA for an argon gas and 132 mA for an oxygen gas in 115 mm diameter have been successfully obtained with excellent uniformity of the ion beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142849
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  • 4
    Electronic Resource
    Electronic Resource
    Current status of development of ion sources in Japan from a standpoint of materials science (invited) : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 517-522 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The current status of development of novel ion sources for materials science in Japan is reviewed. Several types of microwave ion sources which permit a reactive gas discharge have been developed for the production of high intensity and low-charge-state ion beams. The plasma cathode technique, as an electron source, provides conventional ion sources with a long lifetime. Metal ion sources which can deliver a pure metal ion beam have been developed, extracting metal ions from a high temperature discharge chamber of large volume or a porous tip surface. A new principle metal ion source by use of a metal cluster, which consists of hundreds to thousands of metal atoms, has been developed. High current negative ion sources have been developed for both light and heavy ions, resulting from in-depth investigation of negative ion production mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141239
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  • 5
    Electronic Resource
    Electronic Resource
    Development of microwave plasma cathode for ion sources : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 541-543 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of electron source for ion sources, which serves as a cathode has been developed. In this cathode, a high-density microwave plasma is produced under the electron-cyclotron-resonance (ECR) condition, and a high electron current of several amperes can be extracted from it. The structure of this microwave plasma (MP) cathode is very simple and compact. A rod antenna connected to a coaxial line for introducing the microwave power (2.45 GHz) and a rare-earth metal permanent magnet for producing the ECR condition are major components. Since there is no filament in this MP cathode, it has a longer lifetime than the equivalent thermionic filament electron emitter. It offers a great advantage to the operation with reactive as well as inert gases. This MP cathode has been adapted in Kaufman-type ion source and have successfully obtained an argon ion-beam current of 110 mA and an oxygen ion-beam current of 43 mA in 25 mm diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141245
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  • 6
    Electronic Resource
    Electronic Resource
    Focused ion-beam direct deposition of metal thin film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2351-2359 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Focused ion-beam direct deposition has been developed as a new method for fabricating patterned metal films directly on substrates. The principle of this method is to perform ion-beam deposition by low-energy focused ion beams. We designed and constructed a low-energy focused ion-beam apparatus for direct deposition. Metal ions are extracted from liquid metal ion source, accelerated to 20 keV for single charged ions, focused, mass separated, deflected, and finally, decelerated to 30–1000 eV in this system. The beam diameter estimated by the deposited linewidth can be tuned between 0.5 and 8 μm and the beam current varies from 40 pA to 10 nA corresponding to the beam diameter for the Au+ ion in the energy range from 30 to 200 eV. The sticking probabilities of ion-beam deposition were measured and the critical energies for Au+, Cu+, Al+, and Nb2+ were about 210, 230, 800, and 1300 eV, respectively. The purity of gold film was measured by Auger electron spectroscopy and secondary-ion-mass spectroscopy. The concentration of carbon and oxygen was estimated below 100 ppm and was consistent with theoretically expected amounts. Resistivities of deposited gold, copper, and aluminum line were measured 1.5–1.6 times larger than that of bulk gold, 1.2–1.5 times larger than that of bulk copper, and 2.2–2.7 times larger than that of bulk aluminum. The critical temperature of deposited niobium line was also measured and a clear relationship was obtained between the critical temperature and the concentration of contaminations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146945
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  • 7
    Electronic Resource
    Electronic Resource
    Negative-ion extraction of gaseous materials from a radio frequency plasma-sputter-type heavy negative-ion source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1012-1015 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The operational characteristics of a rf plasma-sputter-type heavy negative-ion source with a feeding of O2 or SF6 gas as an ionized material together with Xe gas is presented. To obtain negative ions of chemically reactive elements, we used a material gas and a stainless-steel sputtering target instead of an oxide or fluoride sputtering target to prevent charging trouble. In the source, gas particles adsorbed on the target surface were negatively ionized by sputtering. O− or F− was dominant in the extracted beam and increased with the Cs supply until the yield was optimized. Then, high-current negative ions of mA at an intensity of several, such as 4.6 mA for O− and 4.3 mA for F−, were extracted in a dc mode of operation. Even in this plasma-sputter source with a material gas feeding, the surface production of negative ions was found to be the dominant mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146800
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  • 8
    Electronic Resource
    Electronic Resource
    Negative-ion production probability in rf plasma sputter-type heavy negative-ion sourcea) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1732-1736 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a rf plasma sputter-type heavy negative ion source, which can deliver high current negative ion beams such as Cu− of 12.1 mA, Si− of 3.8 mA, and B−2 of 1 mA in dc operation mode. In our source, the estimated negative ion production probability of Cu was much more than the value obtained by the conventional negative ionization probability equation with an exponential dependence on velocity. We measured heavy negative ion production probabilities by Xe+ sputtering on various cesiated metals. The probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum probabilities at the optimal conditions were considerably high, and they were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets. The probability for very low velocity particles such as sputtered heavy metal atoms might be affected by a surface ionization process with a high local surface temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145233
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  • 9
    Electronic Resource
    Electronic Resource
    Negative-ion production probability in rf plasma sputter-type heavy negative-ion source (abstract)a) : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1226-1226 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a rf plasma sputter-type heavy negative ion source, which can deliver high current negative ion beams such as Cu− of 12.1 mA, Si− of 3.8 mA, and B−2 of 1 mA in dc operation mode. In our source, the estimated negative ion production probability of Cu was much more than the value obtained by the conventional negative ionization probability equation with an exponential dependence on velocity. We measured heavy negative ion production probabilities by Xe+ sputtering on various cesiated metals. The probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum probabilities at the optimal conditions were considerably high, and they were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets. The probability for very low velocity particles such as sputtered heavy metal atoms might be affected by a surface ionization process with a high local surface temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145014
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  • 10
    Electronic Resource
    Electronic Resource
    A negative ion beam application to artificial formation of neuron network in culture : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 797-799 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A negative ion beam modification of the biocompatibility of polystyrene surface was investigated for the artificial formation of neuron network in culture with respect to negative ion species. Negative ions of silver, copper or carbon were implanted in nontreated polystyrene (NTPS) dishes at conditions of 20 keV and 3×1015 ions/cm2 through a mask with many slits of 60 μm in width. For the surface wettability, the contact angle of ion-implanted NTPS was about 75° for silver-negative ions, which was lower than 86° of the original NTPS. For carbon implantation, on the contrary, the contact angles did not change from the original value. In culture experiment using neuron cells of PC-12h (rat adrenal pheochromocytoma), the cells cultured with serum medium in two days showed the cell attachment and growth in number only at the ion-implanted region on NTPS for all ion species. In another two days in culture with nonserum medium including a nerve growth factor, the outgrowth of neural protrusions was also observed only at the ion-implanted region for all ion species. There was a difference in number of attached cells for ion species. The silver-negative ion-implanted NTPS had a large effect for cell attachment compared with other two ion species. This reason is considered to be due to the lowest contract angles among them. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150297
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