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  • 1
    Electronic Resource
    Electronic Resource
    Compact microwave ion source for extremely low energy ion irradiation system : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1160-1162 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance of a compact microwave ion source developed for extremely low energy ion extraction was measured. The ion source was modified to be fitted for the ion extraction at the voltage lower than 100 V. The current–voltage characteristics, mass spectrum, absolute ion energy, and energy spread of argon ion beam were estimated with a sector magnet. The results showed that the mass spectrum showed a clear separation of singly charged ions and doubly charged ions even at the extraction voltage of 4 V. Mass separated Ar+ current of 0.5 nA at 4 V extraction was obtained. An excess ion energy due to presence of plasma potential was 14 eV at the pressure of 5×10−3 Pa, and 66 eV at 9×10−4 Pa. Energy spread was narrower than 12 eV, from rough estimate of the mass spectrum. These results summarize that the present ion source can be used for extremely low energy ion irradiation system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150415
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  • 2
    Electronic Resource
    Electronic Resource
    Operational characteristics of the impregnated-electrode-type liquid-metal ion source with multiple tip and reservoirs : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1351-1353 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of impregnated-electrode-type liquid-metal ion source, which eliminated the heating problem in the previous source, has been developed with multiple tip and reservoirs (TAR's). In the present ion source, the TAR's are connected electrically in series by modifying the TAR holding system. In order to achieve uniform heating of the TAR's, the materials of the knife-edged electrodes, which introduce the heating current to the TAR's, were examined. Tantalum electrodes exhibited better results as compared with the conventional Mo electrodes. Both of the two TAR's could be heated up to 700 °C with a heating power of 200 W. The maximum indium ion current of 9.1 mA was obtained from the four-TAR source with 40 emission points. Since the present ion current was limited by the current capacity of the extraction power supply, an ion current of more than 10 mA will be expected with a larger power supply. The results indicated that an ion current approximately proportional to the number of the emission points was obtained. This kind of ion source could be used as a general ion source in materials science.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144956
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  • 3
    Electronic Resource
    Electronic Resource
    Criterion for decrease of electric field at ionization point of liquid-metal ion sources : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 725-727 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Criterion for decrease of electric field at the ionization point of liquid-metal ion sources has been derived. The argument is based on the equation of space-charge limited current with small charge approximation and the balance of electric field stress, with liquid flow and surface tension stress. The result was such that it is possible to decrease the electric field with an increase in the applied voltage, that is, the source current, under the condition of weaker dependence of current density on the electric field than that in the conventional low temperature field evaporation theory. The dependence of the ion current density on the electric field was calculated from the dependence of the angular current intensity on the electric field, assuming postionization theory. The result indicated that the dependence became almost proportional, which is surprisingly weak for field ion emission. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150274
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular ion implanter equipped with liquid-metal alloy ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 780-782 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Molecular ion implanter was developed with a liquid-metal alloy ion source. Use of a liquid-metal alloy ion source enables us to generate various kinds of molecular ions. To apply liquid-metal ion source to a general ion implanter, it is necessary to converge the divergent beam. We adopted the lens system we have already developed, and examined its performance by computer simulation and experiments. An example of molecular ion implantation was demonstrated with gold-antimony ion source. 24 keV AuSb2+ was implanted into silicon, and presence of gold and antimony atoms was confirmed by Rutherford backscattering spectrometry and particle induced x-ray emission measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150292
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  • 5
    Electronic Resource
    Electronic Resource
    Development of compact microwave ion source for low-energy application : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 887-889 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact microwave ion source for the research of low-energy ion beam application such as ion beam assisted deposition or ion beam sputtering has been developed. The developed ion source is based on the previously reported compact microwave ion source, which was developed for higher-energy extraction. In order to extract the ions with a lower energy, it is necessary to lower the plasma density. The present ion source possesses a plasma expansion cup in order to make the plasma thinner. As a consequence of the thinner plasma, the extractable current becomes lower than that of the thicker plasma, thus the source has multiple extraction apertures. Current–voltage characteristics of the ion source were measured with an extraction system with 37 apertures and the extraction gap of 1.5 mm. At the voltage of 500 V, the current of the extraction electrode decreased rapidly and it was shown that at this voltage, an optimum ion optics was achieved. The argon ion current of 0.4 mA with the energy of 500 eV was extracted. The gas pressure in the processing chamber could be reduced to 5×10−4 Pa. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148583
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  • 6
    Electronic Resource
    Electronic Resource
    Metal ion beam self-sputter deposition system (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1996-1999 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A metal ion beam self-sputter deposition system, which requires no gas feeding, has been developed for film preparation under ultrahigh vacuum. A copper ion beam extracted from a liquid metal ion source is focused by an asymmetric lens system to impinge on the target which is made of the same material as the ion species. Deposition could be done under a pressure of 10−5Pa and the deposition rate of 2.5 nm/min at maximum was achieved. Crystallinity, impurity incorporation, and electrical properties of the deposited copper films were evaluated by x-ray diffraction, Rutherford backscattering spectrometry, particle induced x-ray emission, and a four point probe. The film properties were dominated by the deposition rate, and no significant dependence of the primary ion energy on the film properties was observed. The films with the resistivity of as low as 2.1μΩcm could be obtained at higher deposition rate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146957
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission characteristics of B-doped diamond thin films terminated with oxygen and hydrogen were investigated. The diamond thin films were prepared by microwave plasma chemical vapor deposition. The dependence of emission characteristics on the surface treatment and on the B concentration was investigated. The turn-on voltage required to extract a current of 0.1 nA depended on these preparation parameters. The emitters with lower B concentration emitted electrons at a lower turn-on voltage, and the H-terminated emitters had a lower turn-on voltage than O-terminated emitters. The analysis of the slope and the intercept of Fowler–Nordheim plot revealed that the dependence of turn-on voltage on the surface treatment is due to the difference of emission barrier height, and that the dependence on B concentration is due not to the emission barrier height but to the surface morphology. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120142
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  • 8
    Electronic Resource
    Electronic Resource
    Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1002-1005 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact microwave ion source was applied to the low temperature growth of transition metal nitride thin films for the cathode of vacuum microelectronics devices. An ion beam assisted deposition system consisted of a compact microwave ion source and an electron beam evaporator was developed. Depositions of zirconium nitride and niobium nitride thin films were performed and the film properties were investigated. As a result, it was found that polycrystalline films of zirconium nitride and niobium nitride were prepared at the substrate temperature as low as 500 °C, which was almost 200 °C lower than the results shown in the literature. The reason for this reduction of substrate temperature might be attributed to low gas pressure during deposition, due to the use of a single aperture ion source. The control of film composition by controlling the ion-atom arrival rate ratio achieved the control of work function. It was concluded that the ion beam assisted deposition with microwave ion source provides a possible process of cathode deposition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150372
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  • 9
    Electronic Resource
    Electronic Resource
    Significant improvement of the emission property of Spindt-type platinum field emitters by operation in carbon monoxide ambient (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 588-590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission property of a Spindt-type platinum field emitter was greatly improved by operating in carbon monoxide ambient with appropriate operating parameters. After sufficient aging, the emitter was operated in carbon monoxide ambient up to 10−3 Pa, at the emission current of 1 μA. The emission current first decreased in accordance with the gas introduction, but turned to show rapid increase when the gas pressure was increased to 10−3 Pa. The current stability, as well as the operating voltage, was improved by this treatment. The apex of the emitter was examined with the Seppen–Katamuki analysis technique, in which detailed information on the emission area and effective work function can be read from the diagram plotted with the intercept and slope of a Fowler–Nordheim plot. The analysis suggested reduction of the effective work function is a major reason for the improvement of the emission property. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127053
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  • 10
    Electronic Resource
    Electronic Resource
    Energy distribution of the compact microwave ion source for extremely low voltage ion extraction : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 758-760 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The energy distribution of the ion beam extracted from the compact microwave ion source for extremely low voltage ion extraction was measured with Ar and CO as a discharge gas. The energy distribution was measured by the retarding field method, and changes with respect to the change in gas pressure were observed. The obtained data were arranged by the peak energy and the energy spread. For both gases, the peak energy and the energy spread decreased with an increase in the gas pressure. The energy spread of approximately 5 eV with the peak energy of 15 eV were obtained for Ar gas at the pressure of 10−2 Pa. For CO gas, the peak energy was higher than Ar and approximately 20 eV. The energy spread was 6 eV at the pressure of 10−2 Pa. These values agreed with the peak energy and energy spread that were estimated previously from the mass spectra analysis. Since the ion source was designed to be used in the researches of low energy ion-solid interaction, these characteristics satisfy the requirements for this purpose. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429781
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