ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoreflectance of sulfur-annealed copper indium disulfide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 283-287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the energy gaps for sulfur-annealed copper indium disulfide has been studied by photoreflectance in the temperature range of 10–300 K. The sulfur-annealed sample has been found to have larger transition energies, smaller positive temperature coefficients of energy gaps, and larger spin-orbit splitting energy than the as-grown sample. This can be explained by the reduction of d-level contributions in the upper valence band probably caused by the variation of lattice distance due to native defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347128
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5508-5514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for growing ultrathin silicon oxides of superior quality at low temperatures is indispensable for future submicron device applications. Fundamental characteristics such as the oxide breakdown fields, oxide charges, and interface-state densities of various ultrathin silicon oxides (≤8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 and 600 °C) were investigated. Fluorination (HF soaking) and low-temperature N2O plasma annealing were employed to improve the properties of the oxides. The breakdown fields of the as-grown silicon oxides were enhanced and the interface-state densities were reduced. The effect of N2O annealing time on the interface-state density was also investigated. A longer annealing time ((approximately-greater-than)1 h) was required to reduce the interface-state density. The effective oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm−2. Additionally, the breakdown field of the thin silicon oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357170
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Microstructures of low-temperature-deposited polycrystalline silicon with micrometer grains (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6542-6548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of low-temperature polycrystalline silicon grown both on SiO2 and Corning 7059 glass substrate are presented. The silicon was deposited by the hydrogen dilution method using electron-cyclotron-resonance chemical-vapor deposition at 250 °C without any thermal annealing. The hydrogen dilution ratios were varied from 90% to 99%. Transmission electron microscopy images, Raman shift spectra, and x-ray-diffraction (XRD) patterns of the films were obtained. The maximum grain size was about 1 μm and the crystalline fraction which was characterized from Raman shift spectra was near 100%. From the XRD patterns 〈111〉- and 〈110〉-oriented crystalline silicon grains were clearly present in the polycrystalline silicon films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359063
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Defect identification in undoped and phosphorus-doped CuInS2 based on deviations from ideal chemical formula (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 434-439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model is proposed which is based on the electrical, photoluminescence, and stoichiometric analyses, and this model allows the calculation of the concentration of various defects in undoped and phosphorus-doped CuInS2 crystals grown by the traveling heater method. All the association and ionization reactions are described in terms of the law of mass action. The results indicate that it can be used to explain material compensation and phosphorus-doping effects in CuInS2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339817
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Reversible structural changes in discharge-produced amorphous silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4593-4597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work studies the reversible, structural changes of undoped hydrogenated amorphous silicon films under prolonged illumination and thermal annealing. Experimental results from infrared spectroscopy showed that the strength of the stretch modes of SiH and SiH2 decrease more slowly in the initial stage and then more rapidly at about 1018 cm−3 spin density during prolonged illumination periods. On the other hand, the strength can be restored to its original value after a certain period of thermal annealing at 250 °C. These results are correlated with those obtained from electron paramagnetic resonance and photoconductivity measurements, in which the rate equations were analyzed to reveal the origin of recombinations responsible for the weak Si–Si bond breaking. An explanation is proposed in this study to illustrate the light-induced bond breaking and its repair.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338367
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Some remarks on annealing and doping in CuInS2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 378-382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses problems associated with thermal annealing and n-type and p-type doping in CuInS2. The results of incorporating impurities like Zn and P in CuInS2 single crystals by different methods are reported. Some evidence has been provided to explain the formation of precipitates being the limiting factor to exhibit the shallow acceptor property. The electron beam annealing of phosphorus-implanted CuInS2 has been shown for the first time to be an effective way for p-type conductivity control by extrinsic impurities in any I-III-VI2 ternary chalcopyrite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336694
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance study on annealing of phosphorus-implanted cadmium telluride (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4212-4214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents the investigations on the p-type conduction of the phosphorus-implanted CdTe single crystals. Previous theoretical calculations predicted the existence of large amounts of phosphorus interstitials in the as-implanted and thermally annealed samples and the elimination of these defects in the pulse electron-beam-annealed samples, which is confirmed in this work by the electron paramagnetic resonance measurements. This shows the significant effect of melting crystals in the pulse electron-beam annealing process on obtaining high carrier concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343302
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Generalized rate equations governing the light-induced degradation and the thermal recovery of a-Si:H films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1989-1993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper examines the rate equations governing light-induced degradation and thermal recovery of undoped a-Si:H films. For early degradation the recombination came primarily from band-to-band transitions and the degradation rate (dN/dt) is proportional to the inverse of the square of the spin density (1/N2). When electron paramagnetic resonance active dangling bonds is greater than 1018 cm−3, the recombination through defects becomes more significant, and the degradation rate has a form of A(1/N2)−B(1/N)+C−DN. Furthermore, the temperature dependence on the changes of the photoconductivity decay and recovery indicates that both degradation and recovery are thermally activated processes, and an activation energy of ∼0.2 and ∼1.4 eV was derived for either process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339538
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3607-3609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient CdTe/CdS thin film solar cells have been the recent focus, in which the CdTe layers were reported by close-spaced sublimation, and oxygen was used to control the p-type conductivity of the deposited films. Both the fundamental gap and the impurity level were determined by the wavelength modulation reflectance spectroscopy, which demonstrates that while oxygen atoms have an ionization energy of about 0.1 eV, they do not behave as a simple shallow acceptor. This finding is supported by the electrical characterization. The oxygen concentration incorporated in the CdTe thin films were found to be in the range of 1019–1020 cm−3 by the IR measurements, while a carrier concentration between 1010 and 1012 cm−3 was obtained by Hall measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336792
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Study on the photoconductivity characteristics of porous Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p-n junction, which makes the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct photoconductivity and photovoltaic effects have been clearly revealed from the I-V curves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108604
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...