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  • 1
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    Combining Theory and Systems Building in Pervasive Computing (2010)
    Oxford University Press
    Details
    Publication Date: 2010-02-01
    Print ISSN: 0010-4620
    Electronic ISSN: 1460-2067
    Topics: Computer Science
    Published by Oxford University Press
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  • 2
    Electronic Resource
    Electronic Resource
    An optical method for evaluation of the net acceptor concentration in p-type ZnSe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4153-4157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence (PL) results obtained on p-type ZnSe epilayers grown by molecular beam epitaxy. As an acceptor dopant, we used an active nitrogen beam produced by a free radical nitrogen source. On the basis of a detailed analysis of PL data we propose a simple semiquantitative method for a quick and contactless evaluation of the net acceptor concentration in p-type ZnSe. In particular, we show that the intensity ratio of the donor–acceptor pair (DAP) emission to the acceptor-bound exciton (I1) emission strongly depends on both the excitation power and the quality of the sample, and because of that it cannot by itself be regarded as a good measure of the net acceptor concentration. On the other hand, the intensity of the DAP emission under saturation excitation shows a simple direct proportionality to the net acceptor concentration, thus providing a reliable tool for determining the relative doping level in p-type ZnSe films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354418
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  • 3
    Electronic Resource
    Electronic Resource
    Structural and magnetic properties of NdFe12−xMoxN1−δ compounds : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6251-6253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of nitrides NdFe12−xMoxNi1−δ with x=1–2.5 and δ≤0.2 have been investigated. All nitrides are of the ThMn12 tetragonal structure with the unit cell volumes about 3% larger than their parent alloys. Curie temperatures are enhanced by nitrogenation about 160 K and increase linearly with decreasing content x of Mo. NdFe12−xMox exhibits a weak uniaxial anisotropy with a value of BA less than 0.6 T when x≥1.75. After nitrogenation, all nitrides have a strong uniaxial anisotropy. Values of the anisotropy field BA increase monotonically from 6.35 T for x=2.5 up to 9.5 T for x=1 as decreasing content x of Mo. Saturation magnetizations also increase monotonically with decreasing content x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352661
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  • 4
    Electronic Resource
    Electronic Resource
    Coulomb scattering in a strong magnetic field (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1116-1124 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of a strong magnetic field intrinsically changes the orbit of electrons in their Coulomb interactions with ions for a range of parameters. The characteristic scale for the orbit modification is r0=(Zme/4πε0B2)1/3 where Ze is the ion charge, me the electron mass, and B the magnetic field strength. The scale length is comparable to the interparticle spacing when ne1/3r0=(ωpe/ωce)2/3(Z/4π)1/3∼1 where ωpe/ωce are the electron plasma and cyclotron frequencies, respectively. For large angle scattering events we show complex chaotic scattering interaction events for low-energy electrons. The scattering angle has a fractal dependence on the impact parameter in the chaotic scattering intervals. The process is thought to be important in strongly magnetized, low-temperature plasmas, but the overall macroscopic effects remain to be determined. Test particle simulations are presented that show probability distributions are required to describe the outgoing states of the events with fixed impact parameter and energy which specify a unique Rutherford scattering angle. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459709
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and optical characterization of Ga2O3 nanobelts and nanosheets (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1062-1064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monoclinic Ga2O3 nanobelts and nanosheets are obtained by a simple chemical route involved with H2O at 950 °C in Ar atmosphere. Electron microscopy observations reveal that the as-synthesized Ga2O3 nanobelts and nanosheets are structurally uniform, single crystalline, and most of them are free of defects and dislocations. The nanobelts are growing along with [001] facets, and the nanosheets are stacked up by (011) facets. The Raman scattering spectrum of Ga2O3 nanostructures shows a 30 cm−1 redshift at high wave numbers in comparison with that of bulk Ga2O3 powder. The photoluminescence spectrum reveals that there exists a stable blue emission band centered at 460 nm, which is mainly attributed to the oxygen vacancies in the Ga2O3 nanostructures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1483915
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic phase diagram of Nd(Fe,Mo)12 alloys : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6226-6228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic phase diagram of the alloy series NdFe12−xMox (x=1.0∼2.5) is obtained. Below the Curie temperature, the ferromagnetic phase is divided into three regions: Uniaxial, canted 1, and canted 2. At a temperature of Tsr1 (below 200 K) a spin reorientation transition (SRT) was observed for all the samples, and at Tsr2 (above 200 K) another SRT was found for samples with Mo concentration 1.5〈x〈1.75. At room temperature the easy direction of magnetization (EDM) of NdFe12−xMox changes from the c axis to a canted structure with increasing Mo concentration, with a critical composition of x=1.56. At low temperatures (below 100 K) all NdFe12−xMox compounds exhibit a canted moment structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355406
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  • 7
    Electronic Resource
    Electronic Resource
    Electroluminescence of pure poly(N-vinylcarbazole) and its blends with a multiblock copolymer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2419-2422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) in pure poly(N-vinylcarbazole) (PVK) has been observed in a simple single active layer EL device with the structure of ITO/PVK/Al (or Ca). The emitted light is violet with a maximum intensity at 426 nm; a part of the spectrum lies within the UV region. Blends of PVK with a conjugated-nonconjugated multiblock copolymer (CNMBC) previously described are also electroluminescent. In these blends a new emission peak in the EL spectra appeared and can be attributed to the emission from an exciplex formed by the two polymers. As the composition of the aforementioned blend changes from a PVK-poor to a PVK-rich ratio, the emitted light changes from green to blue. Further, blends containing 97 wt. % PVK and 3 wt. % CNMBC yielded an EL spectrum with a single emission peak different in location from either that of pure PVK or the pure CNMBC; the latter is blue with a maximum intensity at 476 nm. The EL output of the blends can be clearly seen in a brightly lit room at ambient temperature. An electron transport layer consisting of butyl-2-(4-biphenyl)-5-(4-tert-butylphenyl-1,3,4-oxadiazole) (PBD) in PMMA on the cathodic side of the EL device greatly increased the brightness of the emitted light to 200 cd/m2 in the case of a PVK-rich blend, but it had less effect on a PVK-poor blend or in pure PVK and had little effect on the pure form of the CNMBC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358458
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  • 8
    Electronic Resource
    Electronic Resource
    Deep electron states in chlorine-doped ZnSe films grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7382-7388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) was used to investigate defect centers in chlorine-doped ZnSe epitaxial films grown by molecular beam epitaxy on (100) n+-GaAs substrates. The resulting carrier concentrations were in the range from 8×1015 to 3.8×1018 cm−3. In low and moderately doped samples two isolated point defects are found, with energy levels at 0.30 and 0.51 eV below the conduction band. The concentration of the dominant trap (at 0.51 eV) is relatively low— of the order of 1015 cm−3—and does not depend on the Cl-doping level. The trap exhibits a strong electric field dependence, indicating its donorlike character. Heavily doped samples reveal a single thermal emission peak. The DLTS amplitude of this peak changes as a logarithm of the filling pulse duration, suggesting that the emission originates from spatially extended defects. We compare the DLTS behavior observed on ZnSe:Cl to earlier studies of Ga-doped ZnSe. Our results clearly indicate that Cl is far superior to Ga as an n-type dopant, because—unlike Ga—Cl does not of itself introduce any detectable deep defects into ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356652
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of crystal structure on the magnetoresistance of Co/Cr multilayers : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6516-6518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Co/Cr multilayers, and single-crystal Co thin films etc. have been grown on MgO and Al2O3 substrates with Cr and Mo as buffer layers by molecular beam epitaxy technique. From the structure and magnetoresistance studies, we have found that the ferromagnetic anisotropy of resistance (AMR) is strongly influenced by the buffer layer, but with negligible effect due to the variation of the structure of Co films. The AMR of Co film on Cr buffer layer is quite small (0.1%); however, the MR of Co/Cr multilayers is almost one order larger than the AMR of Co film on Cr buffer layer. An enhancement factor of 4 for the MR in Co/Cr multilayers by the interface roughness has been observed. This suggests that the effect due to the spin dependent scattering at the interfacial regions of the superlattice is larger than that due to the spin dependent scattering in the ferromagnetic layers for the MR in the Co/Cr multilayer system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358247
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  • 10
    Electronic Resource
    Electronic Resource
    Reduction of deep defect concentration in chlorine-doped ZnSe by after-growth thermal treatment (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2026-2028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy was applied for investigating the effect of after-growth annealing on the concentration of deep defects in Cl-doped ZnSe epilayers. The samples were grown by molecular beam epitaxy on (100)-GaAs substrates, employing ZnCl2 as the dopant source. The ZnSe:Cl epilayers were annealed in Zn-rich atmosphere at temperatures 400–650 °C for 18–60 h, respectively. As a consequence of the thermal treatment, the total concentration of deep defects in the material was significantly reduced. In particular, annealing almost completely eliminated the dominant defects in the as-grown material (located 0.51 eV below the edge of the conduction band), which strongly supports the identification of the origin of these defects as zinc-vacancy complexes. We also note that the annealing process introduces a small concentration of new defects. The activation energies for electron emission and capture of these traps are 0.24 and 0.17 eV, respectively, indicating that this level lies at 0.07 eV below the conduction band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358840
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