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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4480-4482 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of K2NiF4 is calculated with ab initio, full potential and spin polarized pseudofunction energy band method. The bands are flat and have the indirect band gap of 0.7 eV between the occupied valence bands and empty conduction bands. The band gap is strongly influenced by the existence of [NiF6] crystal field and antiferromagnetic exchange interaction. Charge density plots show an anisotropic bonding between Ni and F in the basal plane and along the apical direction. Spin density plots exhibit an antiferromagnetic ordering with large localized moments on the Ni sites. However, a small fluctuation of net spin density is observed at the F sites. The computed optical conductivity is rather unremarkable with very small optically active structure. The salient features of our results are consistent with experimental observations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4332-4335 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1〈x〈0.6) δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm2/V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4101-4103 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic bands of BaB2O4 (BBO) and LiB3O5 (LBO) have been computed from first principles using the ab initio pseudofunction method. Optical conductivities and densities of states in good agreement with optical measurements and x-ray photoemission are obtained. The gap in BBO results from the borate group to the Ba. In LBO, the gap is from a fourfold coordinated borate to a threefold coordinated borate. This suggests that cluster calculations based on the borate groups alone is a reasonable approximation for LBO, but not for BBO.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4138-4148 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A molecular beam mass spectrometer system has been designed and constructed for the specific purpose of measuring the gaseous composition of the vapor environment during chemical vapor deposition of diamond. By the intrinsic nature of mass analysis, this type of design is adaptable to a broad range of other applications that rely either on thermal- or plasma-induced chemical kinetics. When gas is sampled at a relatively high process pressure (∼2700 Pa for our case), supersonic gas expansion at the sampling orifice can cause the detected signals to have a complicated dependence on the operating conditions. A comprehensive discussion is given on the effect of gas expansion on mass discrimination and signal scaling with sampling pressure and temperature, and how these obstacles can be overcome. This paper demonstrates that radical species can be detected with a sensitivity better than 10 ppm by the use of threshold ionization. A detailed procedure is described whereby one can achieve quantitative analysis of the detected species with an accuracy of ±20%. This paper ends with an example on the detection of H, H2, CH3, CH4, and C2H2 during diamond growth.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4715-4722 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the anisotropic elastic coefficient of composites of oriented ellipsoids in the effective medium approximation. The theoretical prediction is compared with experimental results for the longitudinal and transverse Young's modulus of injection molded polymer blends of an amorphous thermoplastic polyester and an ethylene-propylene-diene rubber at different compositions. The different "percolation limits'' experimentally observed are reproduced. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2681-2683 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm−2) can be realized. Experimental results show that a structure with an 80 A(ring) In0.25Ga0.75As layer as the active channel and an 80 A(ring) spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2739-2741 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new regime for plasma-assisted chemical vapor deposition (CVD) of diamond is reported in which high quality diamond films can be deposited on silicon with relatively high ratios of methane in hydrogen mixtures and at significantly lower substrate temperatures than previously reported. The deposition was achieved in a microwave plasma discharge with a feed gas consisting of a mixture of only methane and hydrogen. The surface temperature of a molybdenum sample, when exposed to the same plasma environment, was measured at 500 °C with an infrared scanning camera. This substrate temperature is substantially lower than the 700–1000 °C range generally regarded as the optimal regime for CVD diamond growth. Analysis by Raman spectroscopy showed that films deposited with a 2% methane in hydrogen mixture produced a near graphite-free diamond film at our reported low-temperature regime, while deposition at 1000 °C resulted in films with a much higher graphitic content.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 56-59 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2624-2630 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A treatment that lowers the threshold field for field emission and increases the emission site density from a nominally n-type diamondlike carbon film is described. The film was deposited using an rf plasma of methane and nitrogen gases. The treatment involved deposition of cesium followed by a low temperature anneal. Field emission measurements were used to characterize the threshold field and emission site density before and after cesium treatment. Ultraviolet photoemission was used to study the effect of cesium on the work function. Dramatic improvements to field emission by cesiation cannot be generalized to all diamondlike samples, as similar treatment of a type IIb single-crystal (p-type) diamond did not produce as pronounced an improvement in turn-on field or emission site density. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1042-1045 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-dependent capture-emission process has been studied for double Poole–Frenkel well traps compared with that of single Poole–Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep-level transient spectroscopic data of GaAs samples grown by molecular-beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.
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