ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Hydrogenated n and p doped Czochralski Si substrates have been studied by means of atomic forcemicroscopy, scanning and transmission electron microscopy, Raman spectroscopy and microwavephotoconductivity decay techniques. The measurements show that the surface is roughest in ndopedsamples which are plasma treated at high frequency. The cone density was found to behighest on p-doped samples, which correlates well to the higher density of defects observed in pdopedsamples. The surface cones were found to consist of nanograins, twins and stacking faultswith random orientations, several hydrogen induced defects and bubbles. The size, density andformation depth of the subsurface defects were seen to depend on doping type, doping level, plasmafrequency and hydrogenation time. Raman spectroscopy shows formation of nearly free hydrogenmolecules, which are presumed to be located in nano-voids or platelets. These molecules dissolvedat temperatures around 600°C. By means of the &-PCD measurements, it is demonstrated thathydrogen-initiated structural defects act as active recombination centres, which are responsible forthe degradation of the minority carrier lifetime
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.315.pdf
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