ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
La1−xSrxCuOS (x=0, 0.05) thin films prepared by radio-frequency sputtering were found to have high optical transmission (≥70%) at the visible and near-infrared wavelengths and an energy gap of about 3.1 eV. The dc electrical conductivities of x=0 and 0.05 thin films at room temperature were 1.2×10−2 and 2.6×10−1 S cm−1, respectively. The Seebeck coefficients of these samples were positive, indicating that p-type electrical conduction is dominant in these materials. A sharp photoluminescence peak, probably originating from an interband transition, was observed at the optical absorption edge. The present study demonstrates that LaCuOS is a promising transparent p-type semiconductor for optoelectronic applications. Moreover, our material design, based on chemical modulation of the valence band, was successfully extended to oxysulfide systems. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1319507
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