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  • 1
    Electronic Resource
    Electronic Resource
    Some properties of ribosomes and RNA from the midguts of the silkworm, Bombyx mori
    Amsterdam : Elsevier
    BBA Section Nucleic Acids And Protein Synthesis 119 (1966), S. 84-91 
    Details
    ISSN: 0005-2787
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2787(66)90040-2
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  • 2
    Electronic Resource
    Electronic Resource
    Applanoxidic acids A, B, C and D, biologically active tetracyclic triterpenes from Ganoderma applanatum
    Amsterdam : Elsevier
    Phytochemistry 30 (1991), S. 4105-4109 
    Details
    ISSN: 0031-9422
    Keywords: Ganoderma applanatum ; Polyporaceae ; anti-tumour promoters. ; applanoxidic acids A, B, C and D ; triterpenes
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0031-9422(91)83476-2
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  • 3
    Electronic Resource
    Electronic Resource
    (η^6-Arene)chromium tricarbonyl complexes as chiral auxiliaries in asymmetric Diels-Alder reactions
    Amsterdam : Elsevier
    Tetrahedron: Asymmetry 4 (1993), S. 2290-2294 
    Details
    ISSN: 0957-4166
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0957-4166(00)80085-3
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  • 4
    Electronic Resource
    Electronic Resource
    Enantioselective ortho lithiation of tricarbonyl(masked phenol and aniline)chromium complexes
    Amsterdam : Elsevier
    Tetrahedron: Asymmetry 5 (1994), S. 1427-1430 
    Details
    ISSN: 0957-4166
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0957-4166(94)80102-9
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of hydrogenated amorphous silicon prepared by alternatively repeating chemical-vapor deposition from disilane and hydrogen plasma treatment (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2543-2549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have been carried out to characterize hydrogenated amorphous silicon prepared by alternatively repeating chemical-vapor deposition (CVD) from disilane and hydrogen plasma (HP) treatment (referred to as HP treated CVD a-Si:H). It has been found that hydrogen plasma treatment induces structural relaxation of Si network in addition to the passivation of Si dangling bonds. Two types of defect states with different Gaussian energy distribution exist in this material, and this type of distribution has been found to be common in undoped a-Si:H prepared by a variety of methods. High film quality, i.e., a low defect density (〈1016 cm−3) and a fairly long ambipolar diffusion length (0.12 μm), and significant reduction of light-induced changes have been simultaneously achieved in HP treated CVD a-Si:H. Steady state transport of electrons and holes under illumination are controlled by the states other than neutral Si dangling bond state (D0). The behavior of these states with long exposure to light is different from that of D0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354695
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  • 6
    Electronic Resource
    Electronic Resource
    Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4344-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies by means of a constant photocurrent method (CPM) have been carried out on the deep defect states in undoped hydrogenated amorphous silicon (a-Si:H). Assuming Gaussian energy distributions, two types of defect states (ST1 and ST2) have been found from careful analysis of CPM spectra; one of these states (ST1) is a neutral Si dangling-bond (Si D0) state, and the other (ST2) is a negatively charged dangling-bond-like defect state located in the lower gap. ST2 lies deeper in energy by 0.1 eV, and has a narrower full width at half-maximum (FWHM) when compared with ST1. Possible candidates for ST2 have been discussed by referring to the previous models of defects in a-Si:H. The FWHM of ST1 (the Si D0 state) does not always depend on the overall structural disorder estimated from Raman spectra. The energy position of the Si D0 state measured from the valence-band edge is almost independent of the optical band gap. Long exposure to light increases the density of ST1 (the Si D0 state) and decreases that of ST2, which suggests that defect conversion proceeds during the illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350818
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  • 7
    Electronic Resource
    Electronic Resource
    Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7924-7931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH4 as the source of carbon and with different nitrogen flow rates (N2/CH4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp2-bonded carbon or a change in sp2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371268
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization and in situ monitoring of a novel compact electron cyclotron resonance plasma source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5252-5256 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For plasma-assisted processing of future semiconductor devices, a new compact electron cyclotron resonance (ECR) plasma source has been specifically designed. The source is novel in that the magnets required for the production of ECR plasma are movable even in vacuum, and in situ monitoring of the discharge zone is also possible. Typical plasma characteristics were evaluated for nitrogen gas using Langmuir probe diagnostics and ion energy analysis. The measured plasma parameters include electron densities in excess of 1010 cm−3 and low ion energies (〈30 eV) with narrow distributions, which can be easily controlled by varying the discharge pressure and downstream position. Moreover, changing the aperture size of the discharge cavity enables one to control the relative ratio of the ionic and atomic species in the plasma. In determining plasma stability, changes in plasma parameters after plasma start-up were investigated. The results show a correlation between changes in the plasma potential and the total plasma optical emission. In situ monitoring of the total plasma emission is suggested as a simple means of providing valuable information in real time about physical plasma parameter changes during processing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146094
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen recombination on plasma facing materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7531-7537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recombination coefficients of hydrogen have been modeled respectively for the front side and the back side of plasma facing materials. On the front side, both the normal-surface sites and the imperfection-surface sites produced by the energetic ions are taken into account, and the dependence of the aerial density of active recombination sites upon the aerial density of imperfections and the balance between the chemisorption and desorption of impurity atoms at imperfections are discussed. On the back side, the effective recombination coefficient is obtained by analyzing the metal-oxide system. This parameter depends upon the solution energy for the metal and the chemisorption energy on the oxide-layer surface as well as surface coverage, if it is rate-limited by the recombination in the oxide layer; and it increases with increasing diffusion coefficient and decreasing thickness, if it is rate-limited by diffusion in the oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356627
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of hydrogenated amorphous silicon by capacitance-voltage and surface photovoltage measurements using liquid Schottky barriers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1916-1927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have been made on the electrical properties of hydrogenated amorphous silicon (a-Si:H) using liquid Schottky barriers. We have found that the quasi-static capacitance-voltage (C-V) method can be applied to the a-Si:H/quinone-hydroquinone (Q-HQ) liquid Schottky junction. This method enables us to determine the net density of positive space charge due to ionized traps and impurities in a-Si:H (Ne), the built-in potential (Vb), and the width of the surface space-charge layer (W), of this liquid junction. The barrier height of an undoped a-Si:H/Q-HQ junction has been estimated to be more than 1 eV from the value of Vb thus obtained. By C-V and surface photovoltage (SPV) measurements on the same samples, we have studied the changes in the properties of a-Si:H with doping and with prolonged illumination. It has been found that phosphorous (P) doping drastically decreases the hole diffusion length measured by the SPV method and increases the value of Ne. Slight boron (B) doping increases the ambipolar diffusion length L1 and the field assisted carrier collection length L2, both of which have been determined by SPV. These results explain the observed enhancement of the photovoltaic properties of a-Si:H p-i-n solar cells with the slight B doping to the i layers. The values of L1 and L2 have a distinct correlation with the photo-voltaic properties in the slightly B-doped samples, which has confirmed the effectiveness of the SPV method in characterizing a-Si:H as a photovoltaic material. We have found that the increase in Ne and the decrease in L1 occur simultaneously in undoped a-Si:H with prolonged illumination. On the other hand, the increase in Ne does not always accompany the decrease in L1 in the photoinduced changes in P-doped or slightly B-doped a-Si:H, which suggests the difference in the mechanism of the changes between undoped and doped samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338038
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