Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1080-1082
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied the atomic H etching of 6H-SiC substrates and the initial stages of GaN/6H-SiC molecular-beam epitaxy growth. Atomic H etched 6H-SiC(0001)Si and (0001¯)C surfaces show a ((square root of 3)×(square root of 3))−R30° and a (1×1) reconstruction respectively, with 0.7±0.2 monolayers of remnant O on both surfaces. GaN/6H-SiC(0001)Si growth is initiated by the formation of islands that develop into flat-top terraces through coalescence. Growth steps of one or integer numbers of the GaN atomic bilayer height are observed. GaN grown on 6H-SiC(0001¯)C is rougher with islands of irregular shape. X-ray photoemission spectroscopy studies show that Si 2p and C 1s photoelectron inelastic mean free paths in GaN are 22±1 and 20±1 Å, respectively. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1350430
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