Publication Date:
2011-08-17
Description:
Author(s): F. C. Bocquet, Y. Ksari, L. Giovanelli, L. Porte, and J.-M. Themlin The desorption or fragmentation temperature of C 60 bound to Si-rich-( 3×3 ) and ( √ 3 ×√ 3 ) R 30 ∘ reconstructions of 6 H -SiC (0001) is investigated using inverse photoemission spectroscopy (IPES) and LEED experiments. On SiC-( 3×3 ), C 60 film is found desorbed after annealing at a high temperature of 1140 K, su... [Phys. Rev. B 84, 075333] Published Tue Aug 16, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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