Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 8169-8178
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A laboratory x-ray diffractometer for surface and thin-film studies is presented. Ex situ structural characterization of FeSi2 films epitaxially grown on Si(111) is reported. Both specular and nonspecular reflectivities are measured on β-FeSi2 films grown by solid-phase epitaxy and reactive deposition epitaxy techniques. A detailed comparison is performed of the electron density profile of the films normal to the surface, as well as of their surface roughness. In-plane diffraction is also measured at grazing incidence. For the β-FeSi2 sample investigated, the (110) epitaxy on Si(111) is clearly shown. For a film grown by molecular-beam-epitaxy codeposition at 550 °C, the existence of a new metastable phase which is in registry with silicon along the Si〈1¯ 10〉 direction and slightly out of registry, (3.0±1.0)% compressed along the Si〈112¯〉 direction, is reported.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353431
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