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  • 1
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3678-3680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural characterization of epitaxial ZnSnP2 grown on GaAs (001). Ordering of Zn and Sn atoms in the cation sublattice is observed by high-resolution x-ray diffraction. By varying the growth conditions, samples with two distinct structures were obtained: one showing chalcopyrite ordering with the tetragonal axis oriented along the growth direction and the other showing no evidence of ordering. Chalcopyrite ordering was determined unambiguously by observing several characteristic reflections uniquely identifying this structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123219
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  • 2
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1999-2001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers and superlattices of GaAsN/GaAs were grown by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The incorporation of nitrogen into the solid was investigated as a function of the substrate temperature and the flux of dimethylhydrazine and modeled assuming formation of an adduct. Growth of GaAsN is characterized by an activation energy of 0.97 eV arising from a difference between activation energies of the adduct sticking coefficient, EB∼1.27 eV, and the adduct formation, EA∼0.3 eV. Nitrogen incorporation of 3% is obtained at a growth temperature of 400 °C. High-resolution x-ray diffraction and photoluminescence data demonstrate excellent quality of epitaxial layers and superlattices grown with dimethylhydrazine. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121245
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  • 3
    Electronic Resource
    Electronic Resource
    Luminescence of as-grown and thermally annealed GaAsN/GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1857-1859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the luminescence properties of coherently strained GaAs1−xNx grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by x-ray diffraction and photoluminescence, show increased nitrogen incorporation and significant improvements in the luminescence efficiency. A band-gap reduction of more than 400 meV, compared to GaAs, is observed for a nitrogen concentration of ∼3%. For the range of nitrogen concentrations investigated here, the band gap follows predictions of the dielectric model of Van Vechten [J. A. Van Vechten and T. K. Bergstresser, Phys. Rev. B 1, 3351 (1970), and references therein]. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121206
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  • 4
    Electronic Resource
    Electronic Resource
    High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2073-2075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia. The initial deposition of Al, at 1130–1190 K, resulted in a very rapid transition to a two-dimensional growth mode of AlN. The rapid transition is essential for the subsequent growth of high quality GaN and AlGaN. This procedure also resulted in complete elimination of cracking in thick (〉2 μm) GaN layers. For layers thicker than 1.5 μm, the full width at half maximum of the (0002) GaN diffraction peak was less than 14 arc sec. We show that a short period superlattice of AlGaN/GaN grown on the AlN buffer can be used to block defects propagating through GaN, resulting in good crystal and luminescence quality. At room temperature, the linewidth of the GaN exciton recombination peak was less than 40 meV, typical of the best samples grown on sapphire. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124920
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  • 5
    Electronic Resource
    Electronic Resource
    Excitons bound to nitrogen clusters in GaAsN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1538-1540 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the photoluminescence from GaAsN/GaAs, with the nitrogen content of less than 0.5%. The low-temperature photoluminescence spectra are composed of several excitons bound to nitrogen complexes, each associated with different composition or configuration. These features were studied as a function of the excitation intensity, temperature, concentration, and growth conditions. The dependence of the binding energy of the dominant recombination center on the nitrogen concentration is interpreted in terms of a hierarchy of nitrogen complexes, from centers composed of at least two nitrogen atoms to more extended clusters. These excitonic transitions are very sensitive to growth parameters and can be used to study the statistical distribution of nitrogen in nominally uniform layers. We also show that the transition from nitrogen doping to alloy formation occurs for nitrogen concentrations above 0.25%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124748
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  • 6
    Electronic Resource
    Electronic Resource
    Two-dimensional array of self-assembled AlInAs quantum wires (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the optical and structural characterization of a two-dimensional array of self-organized AlInAs quantum wires. The structure was created by epitaxially stacking along the [001] direction thin self-assembled, [100]-oriented, superlattices separated by homogeneous layers of Al0.48In0.52As. Vertical and lateral self-alignment results in a highly regular array of wires oriented along the [010] direction. The wire cross-sectional dimensions are about 10×14.4 nm2 and their density is 1.9×1011 cm−2. The energy and the nature of the electronic transitions are significantly affected by confinement in two dimensions: (1) a blueshift of about 100 meV is observed and (2) the two lowest energy transitions are both polarized along the [010] direction. For comparison, the two lowest energy transitions of a lateral superlattice with similar characteristics have a heavy- (polarization along [010]) and a light-hole character (polarization along [100]). Large polarization ratios are measured for both transitions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493222
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1765-1767 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of an AlAs/InAs short-period superlattice, on the electronic band structure is investigated using phototransmission and photoluminescence spectroscopy. Compared with uniform layers of identical average composition, the presence of the composition modulation considerably reduces the band-gap energy and produces strongly polarized emission and absorption spectra. We demonstrate that the dominant polarization direction can selectively be aligned along the [1¯10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward (111)A or (101) resulted in modulation directions along [110] or [100], respectively, and dominant polarization directions along a direction orthogonal to the respective composition modulation. Band-gap reductions as high as 350 and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Ratios of polarized intensities up to 26 are observed in transmission spectra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311598
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  • 8
    Electronic Resource
    Electronic Resource
    Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2017-2019 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction is applied to determine the degree of order in partially ordered epitaxial layers of ZnSnP2 grown on GaAs. The Bragg–Williams order parameter, used as a scaling coefficient for the structure factor of superstructure reflections, is extracted from the comparison of measured and calculated relative intensities of a set of carefully chosen reflections. The calculated diffraction patterns are obtained from the dynamical theory of x-ray diffraction. The effect of antiphase domains on the width of superstructure reflections is discussed. Order parameters up to 30% were measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126240
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 243-245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal–organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432754
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  • 10
    Electronic Resource
    Electronic Resource
    High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 484-486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hexagonal AlN layers were grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. The transition between the (7×7) and (1×1) silicon surface reconstructions, at 1100 K, was used for in situ calibration of the substrate temperature. The initial deposition of Al, at 1130–1190 K, produced an effective nucleation layer for the growth of AlN. The Al layer also reduced islands of SiNx that might be formed due to background NH3 on the silicon surface prior to the onset of epitaxial growth. The transition to two-dimensional growth mode, under optimum conditions, was obtained after the initial AlN thickness of ∼7 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124423
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