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  • 1
    Electronic Resource
    Electronic Resource
    Gd and Sm interfaces with Hg1−xCdxTe(110) and a general model of rare-earth/Hg1−xCdxTe(110) interface formation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1104-1112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature synchrotron radiation photoemission studies of rare-earth/Hg1−xCdxTe(110) junctions were performed as a function of metal coverage for the rare-earth metals Sm, and Gd. These new results are compared to our previous results for Yb/Hg1−xCdxTe junctions. At low rare-earth metal coverages, we observe in all cases a rare-earth Te reaction which removes Hg and Cd from the interface region, and the three-dimensional island growth of a rare-earth telluride layer 4.0–4.5 monolayer thick. The most abrupt interface region is observed for Gd/Hg1−xCdxTe, in agreement with the more reactive character of this interface as compared to Yb/Hg1−xCdxTe and Sm/Hg1−xCdxTe. For higher rare-earth metal coverages, we observe the formation of a metallic rare-earth rich layer at the surface, which effectively traps Hg atoms diffusing across the interface through the formation of a rare-earth–Hg alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351787
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  • 2
    Electronic Resource
    Electronic Resource
    Reaction and growth of Yb/Hg1−xCdxTe(110) interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3115-3126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed synchrotron radiation photoemission studies of Yb/Hg1−xCdxTe junctions as a function of Yb coverage were performed at room temperature. Photoemission from physisorbed xenon after cooling the sample to 35 K was also used to examine the local overlayer work function and the development of interface morphology. For Yb coverages less than 6 A(ring), the data provide evidence for the lateral growth of islands consisting of Yb-Te reaction products involving divalent Yb, and an associated Hg depletion within an 18-A(ring)-thick near-surface layer. Upon island coalescence at an Yb coverage of 6 A(ring), the formation of a metallic Yb-rich layer at the surface is observed. This layer traps Hg atoms diffusing across the interface through the formation of an Yb-Hg alloy, and is responsible for the nonmonotonic behavior of the Hg interface concentration as a function of Yb coverage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349290
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  • 3
    Electronic Resource
    Electronic Resource
    A photoemission study of cluster growth and morphology on inert substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7333-7341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metal overlayer growth on solid xenon was characterized by means of synchrotron radiation photoemission spectroscopy. We employed a simple experimental arrangement in which a closed-cycle refrigerator and in situ evaporated metal films were used as substrate for Xe condensation. A "sandwich'' geometry, in which the overlayer metal was used as substrate for Xe condensation, simplified the isolation of metal and Xe emission features. The evolution of the Xe and metal photoemission intensity and the line shape of core and valence states, as a function of metal coverage, were used to estimate average particle size and nucleation site density. The coverage dependence of the Sm 4f binding energy, as well as a number of newly identified spectral fingerprints of particle coalescence, support the measured film morphology and particle size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349752
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  • 4
    Electronic Resource
    Electronic Resource
    Rare-earth promoters of semiconductor oxidation: The case of GaAs(110)/Yb (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4283-4290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoemission studies show that thin Yb overlayers (0.3–4.1) monolayers) enhance the oxidation of GaAs(110) surfaces. The magnitude of the promotion effect varies as a function of Yb coverage. The oxidation reaction products involve several nonequivalent oxidation states of As and Ga. The specific catalytic activity of the pure divalent Yb overlayers in promoting GaAs oxidation appears lower than that of Sm overlayers containing both Sm2+ and Sm3+ species. The spectroscopic signature of the oxidation reaction products, instead, is compellingly similar for the two rare-earth promoters. We propose that the oxidation promotion mechanism is related, in both cases, to the decomposition of metal/semiconductor interface reaction products upon exposure to oxygen, and that the rare-earth atomic valence has only a limited influence on the promotion mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344943
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of Al from dimethylethylamine alane on GaAs(100)c(4×4) surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3471-3478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al films were grown by chemical vapor deposition at 400, 550, and 700 °C on GaAs(100) substrates using the molecular precursor dimethylethylamine alane. The film morphology and composition were studied in situ by reflection high-energy electron diffraction and Auger electron spectroscopy, and ex situ by atomic force microscopy and scanning electron microscopy. Chlorine (at 400 °C) and C and N (at 550 and 700 °C) at or below the percent level were found to be the major contaminants of the deposited films. Systematic studies for deposition at 400 °C established that the film microstructure evolves via the growth and coalescence of three-dimensional faceted islands with (100)Al(parallel)(100)GaAs or (110)Al(parallel)(100)GaAs preferential orientation. Coalescence of such crystallites was observed only for equivalent coverages of Al above 150 nm. Comparison with the microstructure of Al films obtained by evaporation suggests that in the temperature range examined the evolution of film morphology during chemical vapor deposition from dimethylethylamine alane was mainly determined by surface diffusion of isolated adsorbed Al atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357477
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  • 6
    Electronic Resource
    Electronic Resource
    Strain and structural characterization of Zn1−xCdxSe laser structures grown on GaAs and InGaAs (001) substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 81-88 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reciprocal space mapping has been used to investigate the strain status of microgun-pumped blue and blue-green laser structures. The devices exploit graded-index, separate confinement Zn1−xCdxSe/ZnSe heterostructures grown on InGaAs or GaAs substrates by molecular-beam epitaxy. The location of the reciprocal lattice point of the ZnSe buffer layer within a normally forbidden region of reciprocal space indicates that the ZnSe buffer layer is unusually strained, with an appreciable biaxial tensile strain despite the smaller lattice parameter of the III–V substrate relative to ZnSe. We associate such a phenomenon with the presence of the highly strained laser structure coupled with preferential strain relaxation at the II–VI/III–V heterointerface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362775
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  • 7
    Electronic Resource
    Electronic Resource
    Excitonic properties in Zn1−xCdxSe/ZnSe multi-quantum well structures by one- and two-photon spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2908-2913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of excitonic states by means of one- and two-photon absorption photoluminescence excitation spectroscopy in Zn1−xCdxSe/ZnSe multi-quantum wells is reported. Ground state and excited heavy- and light-hole excitons associated with the n=1,2 subbands have been selectively probed exploiting the different selection rules governing one- and two-photon absorption processes. Experimental exciton transition energies are found to be in good agreement with theoretical predictions when strain and confinement effects are included. The comparison between experiments and theory allowed us to single out a well defined set of band parameters and to gauge the band-offsets in these heterostructures. Furthermore, the absorption band edge clearly evident in the two-photon absorption photoluminescence excitation spectra allowed us to directly measure excitonic binding energies with good accuracy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363144
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructure of Al contacts on GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3090-3092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100–160 °C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160–400 °C) only the conventional texture is observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120255
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  • 9
    Electronic Resource
    Electronic Resource
    Strain and surface morphology in lattice-matched ZnSe/InxGa1−xAs heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2504-2510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched ZnSe/InxGa1−xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2×4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In concentration to match the free-surface lattice parameter to ZnSe. The surface of the II–VI epilayer, however, exhibits a cross-hatched pattern of surface corrugations oriented along orthogonal 〈110〉 directions. This complex surface morphology reflects the formation of surface slip steps during the nucleation of dislocation half-loops at the surface and the establishment of the misfit dislocation network at the InxGa1−xAs/GaAs interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367011
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  • 10
    Electronic Resource
    Electronic Resource
    Ytterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1490-1492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single layers of Yb at the Hg1−xCdxTe(110) interface prevent Al-Te reaction and dramatically increase the Hg concentration at the interface. Synchrotron radiation photoemission studies of the interface as a function of Al deposition show a two orders of magnitude increase in the Hg/Te core intensity ratio as a result of the interlayer-induced change in atomic interdiffusion. Calculations of thermodynamic parameters following a semiempirical alloying model suggest that other rare earths should also act as effective diffusion barriers at mercury-cadmium-telluride/reactive metal junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99108
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