Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 1464-1467
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth kinetics of ultrathin SiO2 films on silicon in a nitrous oxide (N2O) ambient have been investigated as a function of oxidation temperature and time. The results show that the overall growth follows the linear-parabolic law proposed by Deal and Grove [J. Appl. Phys. 36, 3770 (1965)]. The data analysis indicates that although the oxidation proceeds by surface-limited reaction in the initial stage, it rapidly changes into a diffusion-controlled reaction. This behavior is evidenced from the fact that the reaction of the N2O molecule with the silicon surface produces an interfacial nitrogen-rich layer which acts as a barrier to the oxidant passing through the SiO2/Si interface. From the Arrhenius equation for N2O oxidation, the activation energies for the linear rate constant B/A and for the parabolic rate constant B are determined to be 1.5 and 2.3 eV, respectively. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360985
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