Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 2595-2597
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We present results on the optical characterization of InxGa1−xP layers grown by atomic layer molecular beam epitaxy on GaAs (001) substrates at a growth temperature of 420 °C. Our results show that the optical characteristics of these layers, which do not show ordering effects, are strongly dependent on surface stoichiometry during growth. In this way, we can obtain either highly homogeneous alloys with a predictable band-gap energy or layers with optical properties indicative of spatial localization effects, like an anomalous behavior of photoluminescence peak energy with temperature and a large shift between the emission energy and absorption edge. © 1998 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.121428
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