ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The influence of the epitaxial layer growth parameters on the electrical characteristics ofSchottky diodes has been studied in detail. Several diodes were manufactured on different epitaxiallayers grown with different Si/H2 ratio and hence with different growth rates. From the electricalcharacterization a maximum silicon dilution ratio can be fixed at 0.04 %. This limit fixes also amaximum growth rate that can be obtained in the epitaxial growth, with this process, at about 8μm/h. Several epitaxial layers have been grown, using this dilution ratio, with differenttemperatures (1550÷1650 °C). At 1600 °C the best compromise between the direct and the reversecharacteristics has been found. With this process the yield decreases from 90% for a Schottky diodearea of 0.25 mm2 to 61% for the 2 mm2 diodes. Optimizing the deposition process to reduce thedefects introduced by the epitaxial process, yield of the order of 80% can be reached on 1 mm2diodes
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.199.pdf
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